386 patents
Page 6 of 20
Utility
METHOD OF SiC WAFER PROCESSING
16 Feb 23
Provided is a method of SiC wafer processing, and the method includes the following steps.
Shih-Che Hung, Wen-Huai Yu, Wen-Ching Hsu
Filed: 11 Jul 22
Utility
Systems and Methods for Processing Semiconductor Wafers Using Front-end Processed Wafer Edge Geometry Metrics
16 Feb 23
A method for processing semiconductor wafers includes obtaining measurement data of an edge profile of a semiconductor wafer processed by a front-end process tool.
Yung Hsing Chu, Yen-Chun Chou, Yau-Ching Yang, Jing Ru Hong, Shan-Hui Lin
Filed: 8 Aug 22
Utility
Methods for Etching a Semiconductor Structure and for Conditioning a Processing Reactor
16 Feb 23
Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed.
Gang Wang
Filed: 19 Oct 22
Utility
Ingot Jig Assembly and Ingot Edge-polishing Machine Tool
9 Feb 23
An ingot jig assembly is provided, including an end surface clamping jig and an ingot positioning jig.
Wan Ti Lin, Tang-Chi Lin
Filed: 8 Jul 22
Utility
Crystal Growth Doping Apparatus and Crystal Growth Doping Method
9 Feb 23
A crystal growth doping apparatus and a crystal growth doping method are provided.
YU-CHIH CHU, Tang-Chi Lin, Han-Sheng Wu, Hsien-Ta Tseng
Filed: 27 May 22
Utility
Semiconductor Structure
9 Feb 23
A semiconductor structure includes a substrate, a first nitride layer, a second nitride layer, a third nitride layer, and a polarity inversion layer.
Po Jung Lin, Tzu-Yao Lin
Filed: 26 May 22
Utility
Cleave Systems Having Spring Members for Cleaving a Semiconductor Structure and Methods for Cleaving Such Structures
2 Feb 23
Cleave systems for cleaving a semiconductor structure are disclosed.
Justin Scott Kayser
Filed: 29 Sep 22
Utility
Wafer and Manufacturing Method of Wafer
12 Jan 23
A wafer includes a semiconductor substrate.
Chenghan Tsao, Han-Zong Wu
Filed: 14 Feb 22
Utility
Silicon Carbide Crystal
5 Jan 23
A silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer.
CHING-SHAN LIN, JIAN-HSIN LU, CHIEN-CHENG LIOU, MAN-HSUAN LIN
Filed: 14 Sep 22
Utility
Wafer Processing Apparatus
29 Dec 22
A wafer processing apparatus includes a pressure applying element, a rotatable element, a control element, and a heat source.
Hsiu Chi Liang
Filed: 13 Apr 22
Utility
Polishing Head Assembly Having Recess and Cap
29 Dec 22
A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap.
Peter Daniel Albrecht, Chih Yuan Hsu, Jen Chieh Lin, Wei Chang Huang, Yau-Ching Yang
Filed: 10 Jun 22
Utility
Epitaxy substrate and method of manufacturing the same
27 Dec 22
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chun-I Fan, Wen-Ching Hsu
Filed: 16 Jul 19
Utility
Cleave systems having spring members for cleaving a semiconductor structure and methods for cleaving such structures
27 Dec 22
Cleave systems for cleaving a semiconductor structure are disclosed.
Justin Scott Kayser
Filed: 10 Sep 20
Utility
Method of Manufacturing Silicon Carbide Seed Crystal and Method of Manufacturing Silicon Carbide Ingot
22 Dec 22
Ching-Shan Lin
Filed: 24 Aug 22
Utility
Methods for Determining Suitability of Silicon Substrates for Epitaxy
22 Dec 22
Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed.
Shan-Hui Lin, Chun-Chin Tu, Zheng Lu
Filed: 7 Jun 22
Utility
Methods for Determining Suitability of Czochralski Growth Conditions for Producing Substrates for Epitaxy
22 Dec 22
Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy.
Zheng Lu, Shan-Hui Lin, Chun-Chin Tu, Chi-Yung Chen, Feng-Chien Tsai, Hong-Huei Huang
Filed: 7 Jun 22
Utility
Epitaxial structure
20 Dec 22
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer orderly.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 9 Mar 22
Utility
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
20 Dec 22
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 3 Feb 21
Utility
Silicon Carbide Wafers and Grinding Method Thereof
8 Dec 22
A method for grinding a silicon carbide wafer includes the following steps.
Chin Chen Chiu
Filed: 4 May 22
Utility
Use of Quartz Plates During Growth of Single Crystal Silicon Ingots
8 Dec 22
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed.
Matteo Pannocchia, Francesca Marchese, Paolo Tosi
Filed: 2 Jun 22