386 patents
Page 8 of 20
Utility
Method for transfer of a thin layer of silicon
13 Sep 22
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.
Gaurab Samanta, Salvador Zepeda
Filed: 18 Sep 20
Utility
Automated Optical Inspection Method, Automated Optical Inspection System and Storage Medium
25 Aug 22
Cheng-Wei Gu, Shang-Chi Wang, Chia-Yeh Lee
Filed: 4 Jan 22
Utility
Purification Apparatus and Method of Purifying Hot Zone Parts
25 Aug 22
A purification apparatus and a method of purifying hot zone parts are provided.
Chung-Sheng Chang, Masami Nakanishi, YU-SHENG SU, YEN-HSUN CHU, YUNG-CHI WU, Yi-Hua Fan
Filed: 24 Feb 22
Utility
Methods and Systems of Capturing Transient Thermal Responses of Regions of Crystal Pullers
18 Aug 22
A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller.
Zheng Lu, Chi-Yung Chen, Hsien-Ta Tseng, Sumeet S. Bhagavat, Vahid Khalajzadeh
Filed: 15 Feb 22
Utility
Production and use of dynamic state charts when growing a single crystal silicon ingot
16 Aug 22
Methods for growing a single crystal silicon ingot are disclosed.
Giorgio Agostini, Stephan Haringer, Marco Zardoni
Filed: 27 May 20
Utility
Systems and methods for enhanced wafer manufacturing
16 Aug 22
A computer device is provided.
Sumeet S. Bhagavat
Filed: 10 Feb 20
Utility
Methods for growing a single crystal silicon ingot using continuous Czochralski method
9 Aug 22
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 14 Apr 20
Utility
Systems and Methods for Production of Silicon Using a Horizontal Magnetic Field
21 Jul 22
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot.
JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
Filed: 5 Apr 22
Utility
Crucible Molds
21 Jul 22
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 1 Apr 22
Utility
CorrectedProcess for Preparing Ingot Having Reduced Distortion at Late Body Length
14 Jul 22
A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
Filed: 3 Apr 20
Utility
Methods for Forming a Silicon Substrate with Reduced Grown-in Nuclei for Epitaxial Defects and Methods for Forming an Epitaxial Wafer
14 Jul 22
Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed.
Pietro Valcozzena, Maria Porrini, Januscia Duchini
Filed: 1 Apr 22
Utility
Crucible molds
5 Jul 22
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
Mono-crystalline silicon growth method
5 Jul 22
A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base.
Chun-Hung Chen, Hsing-Pang Wang, Wen-Ching Hsu, I-Ching Li
Filed: 27 Dec 19
Utility
Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
5 Jul 22
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
Methods for Implanting Semiconductor Substrates
30 Jun 22
Systems for implanting semiconductor structures with ions are disclosed.
Peter Daniel Albrecht, Junnan Wu
Filed: 5 Nov 21
Utility
Epitaxy Substrate and Epitaxial Wafer Structure
30 Jun 22
An epitaxy substrate including a substrate and an aluminum nitride layer is provided.
Wei Jie Sie
Filed: 17 Dec 21
Utility
System and Methods for a Radiant Heat Cap In a Semiconductor Wafer Reactor
30 Jun 22
A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process.
Chieh Hu, Chun-Chin Tu, Lunghsing Hsu
Filed: 31 Dec 20
Utility
Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
30 Jun 22
A method for doping a single crystal silicon ingot pulled includes heating a vaporization cup.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20
Utility
Use of Buffer Members During Growth of Single Crystal Silicon Ingots
30 Jun 22
Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed.
Matteo Pannocchia, Francesca Marchese, James Ho Wai Kitt
Filed: 16 Dec 21
Utility
Systems for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
30 Jun 22
An ingot puller apparatus for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector extending into the housing.
Yu-Chiao Wu, William Lynn Luter, Richard J. Phillips, James Dean Eoff
Filed: 31 Dec 20