386 patents
Page 12 of 20
Utility
Method of Manufacturing Epitaxy Substrate
4 Nov 21
A method of manufacturing an epitaxy substrate is provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chi-Tse Lee, Chun-I Fan, Wen-Ching Hsu
Filed: 14 Jul 21
Utility
Crystal Pulling System and Methods for Producing Monocrystalline Ingots with Reduced Edge Band Defects
4 Nov 21
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 16 Jul 21
Utility
Mono-crystalline Silicon Growth Apparatus
28 Oct 21
A mono-crystalline silicon growth apparatus is provided.
CHUN-HUNG CHEN, HSING-PANG WANG, Wen-Ching Hsu, I-CHING LI
Filed: 12 Jul 21
Utility
Epitaxial Structure
28 Oct 21
An epitaxial structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer, and a P-type gallium nitride layer sequentially stacked from bottom to top.
TZU-YAO LIN, JIA-ZHE LIU, YING-RU SHIH
Filed: 23 Apr 21
Utility
Epitaxial Structure Having Super-lattice Laminates
28 Oct 21
An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer.
WEI-JIE SIE, JIA-ZHE LIU, YING-RU SHIH
Filed: 23 Apr 21
Utility
High Resistivity Soi Wafers and a Method of Manufacturing Thereof
21 Oct 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 28 Jun 21
Utility
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
12 Oct 21
A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided.
Soubir Basak, Igor Peidous, Carissima Marie Hudson, HyungMin Lee, ByungChun Kim, Robert J. Falster
Filed: 6 Jun 17
Utility
High resistivity silicon-on-insulator structure and method of manufacture thereof
12 Oct 21
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
Filed: 25 Sep 19
Utility
Systems and methods for production of low oxygen content silicon
5 Oct 21
A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field.
Gaurab Samanta, Parthiv Daggolu, Sumeet Bhagavat, Soubir Basak, Nan Zhang
Filed: 30 Jun 20
Utility
High resistivity semiconductor-on-insulator wafer and a method of manufacturing
5 Oct 21
A semiconductor on insulator multilayer structure is provided.
Igor Peidous, Lu Fei, Jeffrey L. Libbert, Andrew M. Jones, Alex Usenko, Gang Wang, Shawn George Thomas, Srikanth Kommu
Filed: 28 Dec 18
Utility
Method of treating a single crystal silicon ingot to improve the LLS ring/core pattern
21 Sep 21
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer.
WonJin Choi, JunHwan Ji, UiSung Jung, JungHan Kim, YoungJung Lee, ChanRae Cho
Filed: 10 Dec 18
Utility
Single crystal silicon ingot having axial uniformity
7 Sep 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
7 Sep 21
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.
Sasha Joseph Kweskin
Filed: 3 Mar 17
Utility
Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
7 Sep 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
7 Sep 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 29 Jul 15
Utility
CorrectedProcess for Preparing Ingot Having Reduced Distortion at Late Body Length
2 Sep 21
A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.
Tapas Jain, Sumeet S. Bhagavat, Zheng Lu, Feng-Chien Tsai, Hong-Huei Huang
Filed: 3 Apr 20
Utility
Crucible Molds and Unitized Crucibles
26 Aug 21
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
Methods for Forming a Unitized Crucible Assembly
26 Aug 21
Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed.
Richard Joseph Phillips, Salvador Zepeda, Patrick Fredrick Boegemann, III, William Luter
Filed: 20 Feb 20
Utility
Method of counting sheet materials
17 Aug 21
A method of counting sheet materials applied to a pile of sheet materials, comprising the steps of: receiving an image of the pile of sheet materials; obtaining a grayscale value of a plurality of pixels along a first image axis direction of the image to form an one dimensional first array; performing binarization of the first elements of the first array with a first threshold value to form an one dimensional second array; obtaining the number of the second elements of a first value appearing between two second elements of a second value in the second array to form a third array; dividing the elements of the third array into a first cluster and a second cluster with a second threshold value; counting the number of the third elements belonging to the first cluster and defining said number as the number of the first sheet materials.
Wei-Cheng Chang, Chia-Yeh Lee, Han-Zong Wu
Filed: 23 Jun 20
Utility
Systems and Methods for Enhanced Wafer Manufacturing
12 Aug 21
A computer device is provided.
Sumeet S. Bhagavat
Filed: 10 Feb 20