386 patents
Page 13 of 20
Utility
Dopant concentration control in silicon melt to enhance the ingot quality
10 Aug 21
Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed.
Maria Porrini
Filed: 10 Sep 19
Utility
Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber
10 Aug 21
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 13 Nov 19
Utility
Methods of introducing dopant into a melt of semiconductor or solar-grade material via a feed tube
10 Aug 21
A method of growing a doped monocrystalline ingot using a crystal growing system is provided.
Stephan Haringer, Marco D'Angella, Mauro Diodà
Filed: 28 Dec 18
Utility
Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability
5 Aug 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 19 Apr 21
Utility
Methods for Processing Semiconductor Wafers Having a Polycrystalline Finish
5 Aug 21
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Alexis Grabbe, Hui Wang, Alex Chu
Filed: 19 Apr 21
Utility
Methods for assessing semiconductor structures
3 Aug 21
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed.
Igor Rapoport, Srikanth Kommu, Igor Peidous, Gang Wang, Jeffrey L. Libbert
Filed: 23 Oct 19
Utility
Methods for polishing semiconductor substrates that adjust for pad-to-pad variance
3 Aug 21
Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.
Ichiro Yoshimura, Alex Chu, H. J. Chiu, Sumeet Bhagavat, TaeHyeong Kim, Norimasa Katakura, Masaru Kitazawa
Filed: 22 Aug 19
Utility
High resistivity SOI wafers and a method of manufacturing thereof
3 Aug 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 16 Sep 20
Utility
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
27 Jul 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 11 Jul 19
Utility
Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
27 Jul 21
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism.
Soubir Basak, Gaurab Samanta, Parthiv Daggolu, Benjamin Michael Meyer, William L. Luter, Jae Woo Ryu, Eric Michael Gitlin
Filed: 31 Dec 18
Utility
Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
1 Jul 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 12 Mar 21
Utility
Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots
29 Jun 21
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 27 Jun 18
Utility
Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10∧7 Ohm-cm and manufacturing method therefor
22 Jun 21
A silicon carbide crystal and a manufacturing method thereof are provided.
Ching-Shan Lin, Jian-Hsin Lu, Chien-Cheng Liou, I-Ching Li
Filed: 24 Jun 19
Utility
Methods for processing semiconductor wafers having a polycrystalline finish
22 Jun 21
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer.
Alexis Grabbe, Hui Wang, Alex Chu
Filed: 29 Sep 16
Utility
Semiconductor Wafer Thermal Removal Control
17 Jun 21
A polishing assembly for polishing of silicon wafers includes a polishing pad, a polishing head assembly, a temperature sensor, and a controller.
Emanuele Corsi, Ezio Bovio
Filed: 28 Feb 21
Utility
Systems and Methods for Production of Silicon Using a Horizontal Magnetic Field
17 Jun 21
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot.
JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
Filed: 8 Dec 20
Utility
Methods for Removing an Oxide Film from a Soi Structure and Methods for Preparing a Soi Structure
17 Jun 21
Methods for removing an oxide film from a silicon-on-insulator structure are disclosed.
Charles R. Lottes, Shawn George Thomas, Henry Frank Erk
Filed: 30 Oct 20
Utility
Methods for preparing a doped ingot
8 Jun 21
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 14 Dec 18
Utility
Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
8 Jun 21
Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed.
Roberto Scala, Stephan Haringer, Franco Battan
Filed: 14 Dec 18
Utility
Radio Frequency Silicon on Insulator Wafer Platform with Superior Performance, Stability, and Manufacturability
27 May 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 3 Feb 21