386 patents
Page 14 of 20
Utility
Epitaxial Structure
20 May 21
An epitaxial structure including at least a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, and a P-type aluminum indium gallium nitride layer is provided.
Jia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
Filed: 18 Nov 20
Utility
Liner Assemblies for Substrate Processing Systems
20 May 21
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 29 Jan 21
Utility
Epitaxial Structure and Semiconductor Device
20 May 21
An epitaxial structure and a semiconductor device are provided in which the epitaxial structure includes at least a SiC substrate, a nucleation layer, and a GaN layer.
Jia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
Filed: 19 Nov 20
Utility
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
27 Apr 21
Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect.
Zheng Lu, Gaurab Samanta, Tse-Wei Lu, Feng-Chien Tsai
Filed: 18 May 18
Utility
Methods and systems for polishing pad control
30 Mar 21
A polishing assembly for polishing of silicon wafers is provided.
Emanuele Corsi, Ezio Bovio
Filed: 28 Jun 18
Utility
Methods for modeling the impurity concentration of a single crystal silicon ingot
23 Mar 21
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed.
Carissima Marie Hudson, JaeWoo Ryu
Filed: 27 Jun 18
Utility
Single Crystal Silicon Ingot Having Axial Uniformity
18 Mar 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Methods for Growing a Nitrogen Doped Single Crystal Silicon Ingot Using Continuous Czochralski Method
18 Mar 21
A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed.
Carissima Marie Hudson, Jae-Woo Ryu
Filed: 13 Sep 19
Utility
Methods and systems for polishing pad control
16 Mar 21
A non-transitory computer-readable storage media having computer-executable instructions embodied thereon for operating a polishing assembly for polishing of silicon wafers is provided.
Emanuele Corsi, Ezio Bovio
Filed: 28 Jun 18
Utility
Methods for Forming Single Crystal Silicon Ingots with Improved Resistivity Control
11 Mar 21
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed.
Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
Filed: 15 Oct 20
Utility
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
9 Mar 21
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 26 Jun 19
Utility
Silicon Carbide Crystal
25 Feb 21
A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer.
CHING-SHAN LIN, JIAN-HSIN LU, CHIEN-CHENG LIOU, MAN-HSUAN LIN
Filed: 16 Oct 20
Utility
Epitaxial Structure
18 Feb 21
An epitaxial structure includes a substrate, a buffer layer, a back diffusion barrier layer, a channel layer formed on the back diffusion barrier layer, and a barrier layer formed on the channel layer.
Jia-Zhe Liu, Ying-Ru Shih
Filed: 26 May 20
Utility
Methods for forming single crystal silicon ingots with improved resistivity control
16 Feb 21
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed.
Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
Filed: 27 Dec 17
Utility
Method of Preparing an Isolation Region In a High Resistivity Silicon-on-insulator Substrate
4 Feb 21
A multilayer composite structure and a method of preparing a multilayer composite structure are provided.
Igor Peidous, Jeffrey L. Libbert
Filed: 28 Sep 20
Utility
Production and Use of Dynamic State Charts When Growing a Single Crystal Silicon Ingot
4 Feb 21
Methods for growing a single crystal silicon ingot are disclosed.
Giorgio Agostini, Stephan Haringer, Marco Zardoni
Filed: 27 May 20
Utility
Liner assemblies for substrate processing systems
2 Feb 21
A liner assembly for a substrate processing system includes a first liner and a second liner.
Arash Abedijaberi, Shawn George Thomas
Filed: 28 Dec 18
Utility
High resistivity SOI wafers and a method of manufacturing thereof
2 Feb 21
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided.
Igor Peidous, Srikanth Kommu, Gang Wang, Shawn George Thomas
Filed: 8 Aug 18
Utility
Methods for separating bonded wafer structures
2 Feb 21
Cleave systems for separating bonded wafer structures, mountable cleave monitoring systems and methods for separating bonded wafer structures are disclosed.
Justin Scott Kayser, John Francis Valley, James Dean Eoff
Filed: 8 Mar 19
Utility
Semiconductor Epitaxial Structure and Method of Forming the Same
21 Jan 21
Provided is a semiconductor epitaxial structure including a nucleation layer disposed on a substrate; a buffer layer disposed on the nucleation layer; a semiconductor layer disposed on the buffer layer; a barrier layer disposed on the semiconductor layer; and a cap layer disposed on the barrier layer.
Yen-Lun Huang, Ke-Hong Su, Ying-Ru Shih
Filed: 2 Jul 20