386 patents
Page 18 of 20
Utility
Dopant Concentration Control In Silicon Melt to Enhance the Ingot Quality
15 Apr 20
Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed.
Maria Porrini
Filed: 9 Sep 19
Utility
Semiconductor on insulator structure comprising a buried high resistivity layer
13 Apr 20
A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided.
Igor Peidous, Andrew M Jones, Srikanth Kommu, Horacio Josue Mendez
Filed: 13 Feb 17
Utility
Bonded substrate for epitaxial growth and method of forming the same
30 Mar 20
A bonded substrate for epitaxial growth and a method for forming the same are disclosed.
Chun-I Fan, Chih-Yuan Chuang, Man-Hsuan Lin, Wen-Ching Hsu
Filed: 22 Mar 18
Utility
Iii-nitride Epitaxial Structure
25 Mar 20
An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 21 Nov 18
Utility
Semiconductor substrate polishing methods with dynamic control
23 Mar 20
Methods for polishing semiconductor substrates are disclosed.
Alex Chu, Hsin-Yi Chi, Francis Hung, Jones Yang, H. J. Chiu, J. W. Lu
Filed: 20 Dec 16
Utility
Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
16 Mar 20
A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.
Sasha Joseph Kweskin
Filed: 2 Mar 17
Utility
Systems for Selectively Feeding Chunk Polysilicon or Granular Polysilicon In a Crystal Growth Chamber
11 Mar 20
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 12 Nov 19
Utility
Methods for Polishing Semiconductor Substrates That Adjust for Pad-to-pad Variance
11 Mar 20
Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed.
Ichiro Yoshimura, Alex Chu, H.J. Chiu, Sumeet Bhagavat, TaeHyeong Kim, Norimasa Katakura, Masaru Kitazawa
Filed: 21 Aug 19
Utility
Epitaxy Substrate and Method of Manufacturing the Same
4 Mar 20
An epitaxy substrate and a method of manufacturing the same are provided.
Ying-Ru Shih, Chih-Yuan Chuang, Chun-I Fan, Wen-Ching Hsu
Filed: 15 Jul 19
Utility
Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber
2 Mar 20
A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt.
Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
Filed: 12 Mar 19
Utility
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
24 Feb 20
A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided.
Vikas Berry, Sanjay Behura, Phong Nguyen, Michael R. Seacrist
Filed: 27 Sep 16
Utility
Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
24 Feb 20
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.
Sasha Joseph Kweskin
Filed: 2 Mar 17
Utility
Methods for Assessing Semiconductor Structures
19 Feb 20
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed.
Igor Rapoport, Srikanth Kommu, Igor Peidous, Gang Wang, Jeffrey L. Libbert
Filed: 22 Oct 19
Utility
Crystal growing systems and methods including a transparent crucible
10 Feb 20
A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly.
Richard J. Phillips, Soubir Basak, Gaurab Samanta
Filed: 13 Mar 18
Utility
Epitaxial Structure
5 Feb 20
An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer.
Jia-Zhe Liu, Yen-Lun Huang, Ying-Ru Shih
Filed: 25 Jun 19
Utility
High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
27 Jan 20
A multilayer semiconductor on insulator structure is provided in which the handle substrate and an epitaxial layer in interfacial contact with the handle substrate comprise electrically active dopants of opposite type.
Gang Wang, Jeffrey L. Libbert, Shawn George Thomas, Qingmin Liu
Filed: 8 Oct 17
Utility
High Resistivity Silicon-on-insulator Structure and Method of Manufacture Thereof
22 Jan 20
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Jeffery L. Libbert, Qingmin Liu, Gang Wang, Andrew M. Jones
Filed: 24 Sep 19
Utility
Radio Frequency Silicon on Insulator Structure with Superior Performance, Stability, and Manufacturability
15 Jan 20
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 10 Jul 19
Utility
Radio Frequency Silicon on Insulator Wafer Platform with Superior Performance, Stability, and Manufacturability
15 Jan 20
A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
Michael R. Seacrist, Robert W. Standley, Jeffrey L. Libbert, Hariprasad Sreedharamurthy, Leif Jensen
Filed: 25 Jun 19
Utility
Manufacturing method of smoothing a semiconductor surface
6 Jan 20
A method is provided for preparing semiconductor structure, e.g., a semiconductor on insulator structure, comprising a device layer having a smooth surface.
Gang Wang, Charles R. Lottes, Sasha Kweskin
Filed: 14 Nov 16