849 patents
Page 26 of 43
Utility
Semiconductor device
9 Nov 20
An semiconductor device capable of suppressing an increase in layout area can be provided.
Mitsuhiro Hotta
Filed: 15 Sep 19
Utility
Manufacturing method of semiconductor device and semiconductor device
9 Nov 20
First and second p-type semiconductor regions (electric-field relaxation layers) are formed by ion implantation using a dummy gate and side wall films on both sides of the dummy gate as a mask.
Kenichi Hisada, Koichi Arai, Hironobu Miyamoto
Filed: 21 Feb 19
Utility
jqv 4tla7312wv0zg5jxae3g4scwvqwvdbq95kf3b8kr4si78n
9 Nov 20
A control device capable of accurately detecting a rotor rotation angle is provided.
Hiroshi Shimada, Akane Abe
Filed: 16 Sep 19
Utility
qdil9uv2c6o5kqm87jlhjhgjrrldkuh4ulkew24kib59jldpviy7
9 Nov 20
A semiconductor device includes a memory cell array, a plurality of word lines, a plurality of bit line pairs, a column selection circuit coupling a bit line pair in a selected column in the plurality of bit line pairs to first and second output signal lines on the basis of a column selection signal, and a sense amplifier amplifying the voltage difference between the first and second output signal lines.
Yoshisato Yokoyama
Filed: 25 Feb 19
Utility
c1p3dppskti8jy34210oaqxgv2vaj3ufy1ph
9 Nov 20
A semiconductor device according to the present invention includes a plurality of masters (100), a memory controller (400a), a bus that connects the plurality of masters (100) and the memory controller (400a), a QoS information register (610) that stores QoS information of the plurality of masters (100), a right grant number controller (602) that calculates the number of grantable access rights based on space information of a buffer (401) of the memory controller (400a), a right grant selection controller (603a) that selects the master (100) which will be granted the access right based on the QoS information of the QoS information register (610) and the number of grantable rights from the right grant number controller (602), and a request issuing controller (201a) that does not pass a request of the master (100) which has not been granted the access right from the right grant selection controller (603a).
Sho Yamanaka, Toshiyuki Hiraki, Yoshihiko Hotta, Takahiro Irita
Filed: 18 Oct 18
Utility
64i8ka8wnzvyqay860qhjsdg1qkc94b8f 4j6w3iof5a1moa2py9xzhu4c
2 Nov 20
A semiconductor device includes a semiconductor substrate, a first well region formed on the semiconductor substrate, a first fin integrally formed of the semiconductor substrate on the first well region and extended in a first direction in a plan view, a first electrode formed on the first fin via a first gate insulating film, and extended in a second direction crossing the first direction in the plan view, a tap region formed on the semiconductor substrate adjacent to the first well region in the second direction, and supplying a first potential to the first well region, a second fin integrally formed of the semiconductor substrate on the tap region and extended in the first direction in the plan view, and a first wiring layer formed on the second fin in a portion overlapping the tap region in the plan view.
Makoto Yabuuchi, Yuichiro Ishii
Filed: 26 Feb 19
Utility
zqnryz0m2gk2r9ulcmzj4rmowxepvu9yjp5 9p9ml669
2 Nov 20
A motor driving apparatus includes a first driving control circuit (an MCU, a driving circuit, an input circuit, a power management IC) and a second driving control circuit (an MCU, a driving circuit, an input circuit, a power management IC).
Hiroaki Kawai, Shunsuke Nakano
Filed: 3 Apr 19
Utility
xnfa1dou06ekdhwkthlac3eq yl88ypn3skywcjfiwe0da
2 Nov 20
A power feeding system according to one embodiment includes a negotiation controller included in a power receiving device, a negotiation controller included in a power feeding device, and a determination unit that determines whether to allow power feeding from the power feeding device to the power receiving device.
Satoshi Otani
Filed: 18 Jul 17
Utility
wake4y8j794blvh27b2cf1wyos8jgt9y0tjz wsah
26 Oct 20
An improvement is achieved in the performance of a semiconductor device.
Toshiyuki Hata, Yuichi Yato
Filed: 21 Jul 17
Utility
bytsx4h ka2xhx5d3kdge3mvw1l
26 Oct 20
A method of manufacturing a semiconductor device includes a step of: patterning a conductive film formed over an interlayer insulating film so as to form a coil and a conductive pattern in the same layer, and then forming unevennesses on a surface of the interlayer insulating film by etching a portion of the interlayer insulating film with using the coil and the conductive pattern as a mask.
Shinichi Uchida, Yasutaka Nakashiba, Tetsuya Iida, Shinichi Kuwabara
Filed: 15 Apr 18
Utility
hnj6g5ymfwj89afod 8qi6y
26 Oct 20
A semiconductor device includes a semiconductor substrate SB and a wiring structure formed on a main surface of the semiconductor substrate SB.
Yoshinori Deguchi, Akinobu Watanabe
Filed: 24 Jun 20
Utility
u56pjp 5r72ilh99r2vrlk0
26 Oct 20
In a method of manufacturing a semiconductor device, a semiconductor chip has first and second pads, a passivation film formed such that respective parts of the first and second pads are exposed, a first surface-metal-layer provided on the part of the first pad and a part of the passivation film, and a second surface-metal-layer provided on the part of the second pad and another part of the passivation film.
Hiromi Shigihara, Hiroshi Tsukamoto, Akira Yajima
Filed: 12 Sep 16
Utility
271uiwomulvqdhdts26ikaejz96yw u4tqata4tc0fbf3ygwfsea8zj
26 Oct 20
The semiconductor module includes a semiconductor chip and a semiconductor chip.
Tetsuya Iida, Yasutaka Nakashiba
Filed: 9 Oct 19
Utility
c5n6k7o7g9ny9usxi5zxpuy5ztr
26 Oct 20
In a MONOS memory of the split-gate type formed by a field effect transistor formed on a fin, it is prevented that the rewrite lifetime of the MONOS memory is reduced due to charges being locally transferred into and out of an ONO film in the vicinity of the top of the fin by repeating the write operation and the erase operation.
Digh Hisamoto, Yoshiyuki Kawashima
Filed: 1 Jul 19
Utility
zq8p048wvgtw5s 3uiof8r4n1cbbcp
26 Oct 20
To provide, in an increased production yield, a reliability-improved semiconductor product having both a planar type transistor and a fin type transistor.
Shigeki Katou
Filed: 27 Mar 19
Utility
vjrarpppjwemrfhoujgxcvutgchaad616kghz8ycd5um3516mi8n4p
26 Oct 20
A semiconductor device capable of lowering a temperature coefficient and increasing a sheet resistance value (ρs value) and a manufacturing method thereof are provided.
Eisuke Kodama
Filed: 8 May 19
Utility
hvzv4jmxw3l6zhtiwavnmgn57ojvwuc7ugwm5295zphnl7b38tdb3p
26 Oct 20
In a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate, dielectric breakdown of a gate insulating film is prevented and the polarization performance of the ferroelectric film is enhanced to improve the performance of a semiconductor device.
Tadashi Yamaguchi
Filed: 15 Nov 18
Utility
qmdlj5kz3jvuw4mf1vaftlhfx rs0ikwr6l1hqgm5q1foezncdvyua
26 Oct 20
A semiconductor device includes a trench-gate IGBT enabling the fine adjustment of a gate capacitance independent from cell performance.
Hitoshi Matsuura
Filed: 23 Jan 19
Utility
tdq3yyxp0x29s1mbs6auet
26 Oct 20
In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR.
Tomoo Nakayama, Shinichi Watanuki, Futoshi Komatsu, Teruhiro Kuwajima, Takashi Ogura, Hiroyuki Okuaki, Shigeaki Shimizu
Filed: 12 Nov 18
Utility
pp8z9vzsfhktel24rwy w1yh1oevhzi8vtsvyijcnynrwhkbvo7vvj4
26 Oct 20
Provided are a motor angle detector for detecting a motor angle, a current detector for detecting a motor current value to drive a motor, a vehicle inclination angle detector for detecting a vehicle inclination angle, a motor control circuit for outputting a control signal to control the driving of the motor, and a storage apparatus.
Yusuke Yasuda, Narihira Takemura
Filed: 25 Jul 18