58 patents
Page 3 of 3
Utility
Processor and Pipeline Processing Method
23 Sep 21
A pipeline processing unit includes a fetch unit that fetches the instruction for the thread having an execution right, a decoding unit that decodes the instruction fetched by the fetch unit, and a computation execution unit that executes the instruction decoded by the decoding unit.
Kazuhiro MIMA, Hitomi SHISHIDO
Filed: 10 Jun 21
Utility
Light Emitting Device and Lighting Device
22 Jul 21
A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other.
Takaya UENO, Hitoshi MUROFUSHI
Filed: 30 Oct 17
Utility
Analog-to-digital Converter
8 Jul 21
An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits.
Hideki HAYASHI
Filed: 23 Mar 21
Utility
Semiconductor Device and Method of Manufacturing Same
20 May 21
A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.
Yuuichi OSHINO
Filed: 28 Jan 21
Utility
Semiconductor Device
20 May 21
A SJ power MOSFET having a super junction structure includes a P− pillar layer buried in a drift layer as an N− pillar layer and including a P pillar upper layer and a P pillar lower layer, wherein the P− pillar layer is configured to fulfill the relationships: Db>Da and Ca>Cb, where Da is a defect density of the P pillar upper layer, Ca is an impurity concentration of the P pillar upper layer, Db is a defect density of the P pillar lower layer, and Cb is an impurity concentration of the P pillar lower layer, so as to achieve a higher switching speed and ensure higher breakdown stability.
Yuji TASAKI
Filed: 22 May 18
Utility
Semiconductor device including a nitride layer
18 May 21
A semiconductor device, comprising a nitride semiconductor layer, a switching element, and a driving transistor; the switching element comprises: a first portion of a first electrode formed on the nitride semiconductor layer; a second electrode formed on the nitride semiconductor layer; and a first control electrode formed on the nitride semiconductor layer and located between the first portion of the first electrode and the second electrode; the driving transistor comprises: a second portion of the first electrode formed on the nitride semiconductor layer and connecting the first portions of the adjacent first electrodes to each other; a third electrode formed on the nitride semiconductor layer and transmitting a signal to the first control electrode; and a second control electrode formed on the nitride semiconductor layer and located between the second portion of the first electrode and the third electrode.
Osamu Machida, Yasushi Tasaka
Filed: 15 Sep 17
Utility
Multicore System
29 Apr 21
A multicore system according to one or more embodiments is disclosed, which may include processors that execute processing different from each other, a selector that selects one of the processors, a checker processor, a comparator that compares an external state of the processor selected by the selector with an external state of the checker processor, or compares an internal state of the processor selected by the selector with an internal state of the checker processor, and a controller that determines that the selected processor or the checker processor is abnormal in response to the external states or the internal states doing not match each other based on comparison results obtained by the comparator.
Takanaga YAMAZAKI
Filed: 5 Jan 21
Utility
Semiconductor device
27 Apr 21
A semiconductor device includes: a semiconductor base; a trench insulating film which is provided on the inner wall surface of a trench formed from the upper surface of the semiconductor base in a film thickness direction of the semiconductor base and including a charged region which is charged positively; and a gate electrode provided on the trench insulating film within the trench.
Shunsuke Fukunaga, Taro Kondo
Filed: 27 Oct 16
Utility
Control apparatus and method for current resonance circuit and current resonance power supply
2 Feb 21
Embodiments of this disclosure provide a control apparatus and method for a current resonance circuit and a current resonance power supply.
Ryuichi Furukoshi, Osamu Ohtake
Filed: 18 Nov 19
Utility
Switching Power Supply Device
28 Jan 21
Provided is a switching power supply device capable of easily realizing multi-phase operation and current balancing with the number of operation phases depending on the amount of load.
Keita ISHIKURA, Takumi SHIIYAMA, Masanori UENO
Filed: 27 Apr 18
Utility
High-voltage MOSFET structures
19 Jan 21
Apparatus and associated methods relate to a bond-pad structure having small pad-substrate capacitance for use in high-voltage MOSFETs.
Peter West, Dosi Dosev, Don Rankila, Tatsuya Kamimura, Steve Kosier
Filed: 13 Sep 17
Utility
Semiconductor device
12 Jan 21
A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.
Shunsuke Fukunaga, Taro Kondo
Filed: 27 Oct 16
Utility
Power conversion device and control circuit
28 Dec 20
A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state.
Junichi Takada, Mitsutomo Yoshinaga, Toshihiro Nakano, Koki Imai, Osamu Ohtake
Filed: 18 Feb 20
Utility
Non-contact Power Supply Apparatus and Non-contact Power Transmission System
9 Dec 20
A non-contact power supply apparatus is disclosed.
Takashi MATSUMOTO, Shinji ASO
Filed: 9 Jun 19
Utility
Processor and pipelining method
30 Nov 20
A processor is disclosed that performs pipelining which processes a plurality of threads and executes instructions in concurrent processing, the instructions corresponding to thread numbers of the threads and including a branch instruction.
Kazuhiro Mima, Hitomi Shishido
Filed: 26 Nov 18
Utility
Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrate
9 Nov 20
Ken Sato, Hiroshi Shikauchi, Masaru Shinomiya, Keitaro Tsuchiya, Kazunori Hagimoto
Filed: 23 Feb 17
Utility
Semiconductor device
2 Nov 20
A current collapse characteristic is sufficiently suppressed.
Hironori Aoki
Filed: 16 Aug 18
Utility
Alternating-current voltage detection circuit
2 Nov 20
An alternating-current voltage detection circuit for detecting an alternating-current voltage from an alternating-current power source according to one or more embodiments may include: a rectification circuit that performs full-wave rectification on an alternating-current voltage from the alternating-current power source and supplies a rectified output to a load; a series circuit comprising a first capacitor and a second capacitor electrically connected in series between one end of the alternating-current power source and the ground terminal of the rectification element; a discharge circuit that causes the second capacitor to discharge such that an absolute value of dv/dt voltage does not reach a predetermined voltage, wherein the second capacitor is electrically connected to the ground terminal side of the rectification element; and a predetermined period generator that outputs a signal after an elapse of a predetermined period of time from stoppage of a discharge operation of the discharge circuit.
Osamu Ohtake
Filed: 15 Jan 19