7578 patents
Page 4 of 379
Utility
Dynamic pressure control for processing chambers implementing real-time learning
9 Jan 24
System and methods of improving dynamic pressure response during recipe step transitions.
Tina Dhekial-Phukan, Michael Nichols
Filed: 6 Sep 19
Utility
Mesa height modulation for thickness correction
9 Jan 24
Exemplary substrate support assemblies may include a chuck body defining a substrate support surface.
Saketh Pemmasani, Akshay Dhanakshirur, Mayur Govind Kulkarni, Madhu Santosh Kumar Mutyala, Hang Yu, Deenesh Padhi
Filed: 9 Jul 21
Utility
Methods of forming molybdenum contacts
9 Jan 24
Methods for forming a semiconductor structure are described.
Seshadri Ganguli, Jacqueline S. Wrench, Yixiong Yang, Yong Yang, Srinivas Gandikota
Filed: 7 May 21
Utility
Fully self-aligned subtractive etch
9 Jan 24
Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described.
Lili Feng, Yuqiong Dai, Madhur Sachan, Regina Freed, Ho-yung David Hwang
Filed: 1 Jun 21
Utility
Asymmetry correction via oriented wafer loading
9 Jan 24
A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate.
Eric Lau, Charles C. Garretson, Huanbo Zhang, Zhize Zhu
Filed: 16 Mar 22
Utility
Solid-state power amplifiers with cooling capabilities
9 Jan 24
Methods and apparatus for processing a substrate.
Rajesh Kumar Putti, Vinodh Ramachandran, Ananthkrishna Jupudi, Lean Wui Koh, Prashant Agarwal
Filed: 2 Sep 20
Utility
Consolidated filter arrangement for devices in an RF environment
9 Jan 24
A method includes generating, external to a radio frequency (RF) environment and based on a process recipe, a first signal and a second signal.
Phillip Criminale, Steve E. Babayan, Scott Edmonson, Phillip R. Sommer, Dan A. Marohl, Chris Blank
Filed: 26 Oct 20
Utility
Methods and apparatus for warpage correction
9 Jan 24
Methods and apparatus for processing a substrate are provided herein.
Sriskantharajah Thirunavukarasu, Puay Han Tan, Karrthik Parathithasan, Jun-Liang Su, Fang Jie Lim, Chin Wei Tan, Wei Jie Dickson Teo
Filed: 17 Sep 20
Utility
Substrate Carrier Improvement
4 Jan 24
A method of forming a substrate carrier is provided.
Russell Chin Yee TEO, Yingdong LUO, Ludovic GODET, Daihua ZHANG, Zhengping YAO, James D. STRASSNER
Filed: 19 Jun 23
Utility
Co-doping to Control Wet Etch Rate of FCVD Oxide Layers
4 Jan 24
A method for reducing a wet etch rate of flowable chemical vapor deposition (FCVD) oxide layers in a semiconductor wafer, the method including performing a plasma doping operation on the semiconductor wafer using a primary dopant gas and a diluent gas adapted to reduce a wet etch rate of the FCVD oxide layer, wherein the dopant gas and the diluent gas are supplied by a gas source of a plasma doping system, wherein the diluent gas is provided in an amount of 0.01%-5% by volume of the total amount of gas supplied by the gas source 36 during the plasma doping operation, and wherein the primary dopant gas is He and the diluent gas is selected from a group including of CH4, CO, CO2, and CF2.
Vikram M. Bhosle, Timothy J. Miller, Jun Seok Lee, Deven Raj Mittal
Filed: 30 Jun 22
Utility
Forming Optical Device Using Mixed-particle Layer
4 Jan 24
A method of forming an optical device is provided.
Yingdong LUO, Xiaopei DENG, Rami HOURANI, Ludovic GODET
Filed: 19 Jun 23
Utility
Composite Barrier Layers
4 Jan 24
Described are methods for forming ruthenium doped niobium nitride barrier layers.
Jiajie Cen, Zheng Ju, Feng Chen, Jeffrey W. Antis, Bengamin Schmiege
Filed: 30 Jun 23
Utility
Differential Capacitive Sensor for In-situ Film Thickness and Dielectric Constant Measurement
4 Jan 24
Methods and apparatus for a processing chamber are provided herein.
Patrick TAE, Yaoling PAN, Leonard M. TEDESCHI
Filed: 14 Sep 23
Utility
Method and Apparatus for Deposition of Mental Nitrides
4 Jan 24
A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber.
Mingwei ZHU, Zihao YANG, Nag B. PATIBANDLA, Ludovic GODET, Yong CAO, Daniel Lee DIEHL, Zhebo CHEN
Filed: 23 May 23
Utility
Corrosion Resistant Film on a Chamber Component and Methods of Depositing Thereof
4 Jan 24
Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced.
Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
Filed: 14 Sep 23
Utility
Seal Mechanism for Load Port Doors
4 Jan 24
The disclosure describes devices and systems for a seal, and methods for using said seal.
James Christopher Hansen, Douglas B. Baumgarten, Paul Reuter
Filed: 1 Jul 22
Utility
Plasma Enhanced Tungsten Nucleation for Low Resistivity
4 Jan 24
A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one feature.
Tsung-Han YANG, Junyeong YUN, Rongjun WANG, Yi XU, Yu LEI, Wenting HOU, Xianmin TANG
Filed: 11 Apr 23
Design
Collimator for a physical vapor deposition chamber
2 Jan 24
Martin Lee Riker, Keith A. Miller, Fuhong Zhang, Luke Vianney Varkey, Kishor Kumar Kalathiparambil, Xiangjin Xie
Filed: 29 Aug 21
Design
Shadow ring lift pin
2 Jan 24
Zubin Huang, Srinivas Tokur Mohana, Shreyas Patil Shanthaveeraswamy, Sandesh Yadamane, Jallepally Ravi, Harpreet Singh, Manjunatha Koppa
Filed: 28 Sep 21
Utility
Techniques to improve adhesion and defects for tungsten carbide film
2 Jan 24
Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films.
Vivek Bharat Shah, Anup Kumar Singh, Bhaskar Kumar, Ganesh Balasubramanian
Filed: 3 Jan 19