2001 patents
Page 19 of 101
Utility
Method for Manufacturing Room-temperature-curable Organopolysiloxane Composition, Room-temperature-curable Organopolysiloxane Composition, and Article
30 Mar 23
Through the present invention, by undergoing a step in which a straight-chain diorganopolysiloxane having silanol groups at both terminal ends of the molecular chain thereof, a hydrolyzable silane and/or a partial hydrolysis condensate thereof having a hydrolyzable group capable of detaching a lactic acid ester, and an amino-group-containing hydrolyzable organosilane and/or a partial hydrolysis condensate thereof are pre-mixed/reacted in advance and silanol groups at both terminal ends of the molecular chain of a main agent (base polymer) are blocked by specific hydrolyzable silyl groups, it is possible to manufacture a lactic-acid-ester-type room-temperature-curable organopolysiloxane composition excellent in all characteristics including curability, adhesive properties, workability, and the like that were not attainable by the conventional lactic-acid-ester-type room-temperature curable (RTV) silicone rubber composition.
Akitsugu FUJIWARA, Takafumi SAKAMOTO
Filed: 21 Oct 22
Utility
Rubber Compounding Ingredient and Rubber Composition
30 Mar 23
Munenao HIROKAMI, Tsuneo KIMURA, Masahiko MINEMURA, Tsutomu NAKAMURA
Filed: 7 Sep 22
Utility
bvnnruks4033r46e40qp
30 Mar 23
Koji SAKUTA
Filed: 5 Feb 21
Utility
ul6kzmn3senz259bh61ajmbany8xpl g0asj
30 Mar 23
A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 μm, a total volume of 10 μm pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity.
Yuji Kimura, Yasushi Takai, Shigeyuki Nakamura
Filed: 6 Dec 22
Utility
16p413gpvbaoctrkpfvm3m3vlrdjqldt
28 Mar 23
Jun Hatakeyama, Motoaki Iwabuchi, Koji Hasegawa, Yasuyoshi Kuroda
Filed: 31 May 19
Utility
pfmmkhb1qx0yg2rtwt miiafoxo1
28 Mar 23
The present invention provides a polyvinyl chloride-based resin molded product obtained by molding a resin mixture containing 1 to 50 parts by weight of calcium carbonate having an average primary particle size of 0.01 to 0.3 μm and 5 to 18 parts by weight of an impact modifier per 100 parts by weight of a polyvinyl chloride-based resin, wherein a Charpy impact strength at 0° C. is 20 kJ/m2 or more, and a Vicat softening temperature is 85° C. or higher, and a method for manufacturing the polyvinyl chloride-based resin molded product.
Toshiki Kawabata
Filed: 27 Sep 18
Utility
b5tjhljgd5dmruixplteqs8ad7dtmdzklny3
28 Mar 23
Hironori Satoh, Tsukasa Watanabe, Seiichiro Tachibana, Satoshi Watanabe, Tsutomu Ogihara
Filed: 13 Feb 19
Utility
xdse6fmp1wng8leesdnasywk2ilks78c91jfs1yrn lbe7
28 Mar 23
Ryosuke Taniguchi, Satoshi Watanabe, Takayuki Fujiwara, Naoya Inoue
Filed: 24 Feb 20
Utility
wbb13sh2b5xqe7ulf0ggpa5pjgo
28 Mar 23
The present invention is a method for controlling flatness of a wafer including the steps of: providing a holding member having a holding surface including a plurality of segments, where each of the plurality of segments includes a dry adhesive fiber structure; making the holding surface of the holding member adhere to a wafer to make the holding member hold the wafer; obtaining information on flatness of the wafer by measuring flatness of the wafer to; and releasing adhesion of the dry adhesive fiber structures to the wafer in a part of the plurality of segments of the holding surface of the holding member based on the information on flatness.
Tsutomu Ogihara
Filed: 11 Mar 21
Utility
7jdkv51hqqgi25 bsnw3elsq6g7uhk9d1tui865s9w7y7a
28 Mar 23
Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a conductive paste applied thereto; a heating section, which heats the substrate and fires the conductive paste; and a cooling section, which cools the heated substrate.
Ryo Mitta, Takenori Watabe, Hiroyuki Otsuka
Filed: 22 Nov 17
Utility
2q85g4uy2wycmlqurf6z5y8kmvmgyxukbsi jitumkl1b
23 Mar 23
An isocyanate group-containing organosilicon compound shown by the following general formula (1), and having three or more R2 groups per molecule and a viscosity at 25° C. of 100 mm2/s or less.
Koji SAKUTA
Filed: 1 Feb 21
Utility
tvrmwbaceh uxdzm8nnhbq1c51ov7mv7sk4sf82tkvu5we37ja
23 Mar 23
The present invention provides: a temporary adhesive for wafer processing, said temporary adhesive being used for the purpose of provisionally bonding a wafer to a support, while being composed of a photocurable silicone resin composition that contains a non-functional organopolysiloxane; a wafer processed body; and a method for producing a thin wafer, said method using a temporary adhesive for wafer processing.
Mitsuo Muto, Michihiro Sugo, Shohei Tagami
Filed: 22 Apr 21
Utility
jtn lp8d5jn4lalqibyr
23 Mar 23
A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film.
Takenori WATABE, Hiroshi HASHIGAMI
Filed: 17 Dec 20
Utility
a4fiixk3p6pp0jhbhz02cz8v63g5utb
21 Mar 23
Jun Hatakeyama, Motoaki Iwabuchi, Koji Hasegawa, Yasuyoshi Kuroda
Filed: 14 Jun 19
Utility
t3d8w wm04b3w4j4u0ts6u9zlkqmep2ec2bzvu1bw2oxk4i6da
21 Mar 23
A thermally conductive sheet in which a cured layer of a thermally conductive silicone composition is laminated on one or both sides of a synthetic resin film layer of aromatic polyimide, etc. having excellent heat resistance, electrical insulation, and mechanical strength, wherein good thermal conductivity, good insulation, and strong interlayer adhesion are provided because the thermally conductive silicone composition includes 250 to 600 wt. % of an aspherical thermally conductive filler material, which contains no more than 80 ml/100 g of a DOP oil absorption amount and an organic silicon compound component including an adhesion imparting agent, relative to 100 wt. % of the organic silicon compound component, and moreover the thermally conductive sheet with no brittleness during use can be made using continuous molding.
Akihiro Endo, Yasuhisa Ishihara, Hisaharu Yamaguchi, Masahiro Moteki
Filed: 16 Jan 18
Utility
qs4u1xm60lz8lhhfnxrbl6ro3tc1
21 Mar 23
A low-dielectric heat dissipation film composition contains: (A) a maleimide resin composition containing (A1) a maleimide resin containing at least two or more maleimide groups per molecule and (A2) a polymerization initiator; and (B) boron nitride particles.
Hiroyuki Iguchi, Yoshinori Takamatsu, Yuki Kudo, Atsushi Tsuura, Yoshihiro Tsutsumi
Filed: 24 Mar 20
Utility
0aqkwfalelcdzs2fqw9iettk1p8aphgbu9s
21 Mar 23
Takeshi Sasami, Kenji Yamada, Jun Hatakeyama, Satoshi Watanabe
Filed: 30 Dec 19
Utility
82mb9pq48hx3g6wbtk025ngblzevyvj2c4mcs4vrkt8ba8iv
16 Mar 23
Takeshi NYUUGAKU, Koichi NAKAZAWA
Filed: 16 Aug 22
Utility
ebq8ni0o9hqi644ibrt846
16 Mar 23
A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit.
Takenori WATABE, Hiroshi HASHIGAMI
Filed: 21 Nov 22
Utility
qsl6ka3qv243dzvoweh4f2h0exoxbfmg0vf2uom3rdg0k5t7d5
16 Mar 23
A SiC single crystal is produced by impregnating a molten alloy of silicon and a metallic element M that increases carbon solubility into a SiC sintered body to form a SiC crucible, placing silicon and M in the crucible and heating the crucible to melt the silicon and M and form a Si—C solution, dissolving silicon and carbon in the solution from surfaces of the crucible in contact with the solution, contacting a SiC seed crystal with the top of the solution to grow a first SiC single crystal on the SiC seed crystal by a solution process, and bulk growing a second SiC single crystal on a face of the solution-grown first SiC single crystal by a sublimation or gas process.
Norio Yamagata, Naofumi Shinya, Yu Hamaguchi, Toshihiro Tsumori, Takehisa Minowa
Filed: 7 Sep 22