1128 patents
Page 3 of 57
Utility
Semiconductor Device
14 Dec 23
There is provided a semiconductor device in which the transistor portion has a first transistor region provided with the emitter region, the contact region, and the first base region; a second transistor region which is provided with the emitter region and the contact region and which is provided between the first transistor region and the diode portion; and a boundary region which includes the second base region and which is provided between the second transistor region and the diode portion, and at a front surface of the semiconductor substrate, an area of the contact region in the second transistor region is smaller than an area of the contact region in the first transistor region.
Tomonori MIZUSHIMA, Tatsuya NAITO
Filed: 25 Apr 23
Utility
Semiconductor Device
14 Dec 23
An abnormal input control circuit includes at least one of a first, a second or a third detection circuit.
Masahiro TAOKA
Filed: 23 May 23
Utility
Semiconductor Device
7 Dec 23
A semiconductor device has a semiconductor base substrate, a first electrode disposed on the surface of the semiconductor base substrate, a protective film covering an end portion of the first electrode, and a second electrode disposed on the first electrode, in an opening of the protective film.
Yasuyuki HOSHI
Filed: 24 Apr 23
Utility
Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Substrate
7 Dec 23
First and second buffer regions and an n−-type drift region are sequentially formed by epitaxial growth on an n+-type starting substrate.
Makoto UTSUMI, Masaki MIYAZATO
Filed: 23 Aug 23
Utility
Insulated Gate Bipolar Transistor
7 Dec 23
Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a gate trench portion which is provided from an upper surface of a semiconductor substrate to a portion below the accumulation region; and a lower end region which is provide to be in contact with a lower end of the gate trench portion; wherein the accumulation region has a first concentration peak in which the doping concentration indicates a maximum value in a depth direction, and a distance between the first concentration peak and the lower end region in a depth direction is less than a distance between the first concentration peak and the base region in the depth direction.
Takuya YAMADA, Seiji NOGUCHI, Yosuke SAKURAI, Ryutaro HAMASAKI, Daisuke OZAKI
Filed: 18 Aug 23
Utility
Power Conversion Device
7 Dec 23
A power conversion device includes a power converter including a semiconductor module, to convert input power and output the converted power, and a capacitor electrically connected to the semiconductor module.
Yuki YANO, Hiroyuki KUWAHARA, Yoshio MORI, Masamitsu TAKIZAWA, Jun KANDA
Filed: 22 May 23
Utility
Terminal Structure, Method for Manufacturing Terminal Structure, and Semiconductor Apparatus
30 Nov 23
A terminal structure includes a pair of plate sections including first and second plate sections respectively provided spaced apart from each other in a thickness direction of the nut, a connection plate section extending in the thickness direction of the nut and connects respective one ends of the pair of plate sections to each other, a terminal section protruding from the other end of the first plate section of the pair of plate sections and faces the connection plate section, and a holding section provided at at least one of the connection plate section or the terminal section, and restricting rotation of the nut and movement of the nut in a direction intersecting the thickness direction.
Tadahiko SATO
Filed: 16 Mar 23
Utility
Fluid Measurement System and Fluid Measurement Method
30 Nov 23
A fluid measurement system includes a first sensor and a second sensor disposed on a same pipe and spaced apart from each other by a predetermined distance; and a measurement controller configured to calculate a flow velocity of a fluid flowing through the pipe based on first output that is output from the first sensor and second output that is output from the second sensor.
Naomichi JIMBO, Naoki TAKEDA
Filed: 14 Mar 23
Utility
Semiconductor Device
30 Nov 23
A semiconductor device encompasses a mounting member having a copper-based wiring layer; first covering layer which contains nickel, covering the wiring layer so that a part of upper surface of the wiring layer is exposed in opening; joint layer metallurgically joined to the wiring layer in the opening; second covering layer which contains nickel, metallurgically joined to the joint layer on upper surface of the joint layer; semiconductor chip having bottom surface covered with the second covering layer.
Fumihiko MOMOSE, Hirohisa OYAMA, Yasuaki HOZUMI
Filed: 24 Apr 23
Utility
Silicon Carbide Semiconductor Device
30 Nov 23
An active region has, in a periphery thereof, a p-type outer peripheral region that has sequentially from a front surface of a semiconductor substrate, a p++-type contact extension portion, a p-type base extension portion, and an upper portion and a lower portion of a p+-type extension portion, so as to form, at an outer end portion thereof, steps that are recessed stepwise toward a center of the active region and that in a depth direction, are arranged in ascending order of proximity thereof to the center.
Yasuyuki HOSHI
Filed: 31 Mar 23
Utility
Silicon Carbide Semiconductor Device
30 Nov 23
A semiconductor device having, in an outer peripheral portion of an active region, and in a depth direction from a front surface of a semiconductor substrate, first to fourth outer peripheral regions, to thereby form steps that are recessed stepwise toward the center of the semiconductor device by a same width, and are arranged in an ascending order of the proximity to the center in the depth direction.
Yasuyuki HOSHI
Filed: 31 Mar 23
Utility
Nitride Semiconductor Device
30 Nov 23
Tsurugi KONDO, Katsunori UENO, Shinya TAKASHIMA, Ryo TANAKA
Filed: 8 Mar 23
Utility
Drive Circuit of Switching Element and Intelligent Power Module
30 Nov 23
A gate drive circuit 22A, in order to cause an IGBT 211a in a semiconductor elements 21u to switch to the ON state according to the signal level of an input signal SinUH, includes a constant current supply unit 223uA configured to supply constant current to the gate G of the IGBT 211a, a switching signal input terminal Tsw4 to which a switching signal Ssw4 is input, a signal level determination unit 226uA configured to determine a signal level of the switching signal Ssw4, and a drive capability switching unit 224uA configured to, by changing a current amount of constant current output from the constant current supply unit 223uA, based on a determination result in the signal level determination unit 226uA and a signal level of the input signal SinUL, switch the drive capability of the constant current supply unit 223uA.
Eiji KUROSAWA
Filed: 27 Mar 23
Utility
Semiconductor Device
23 Nov 23
A semiconductor device having a semiconductor chip and a control circuit.
Yuki KUMAZAWA
Filed: 30 Mar 23
Utility
Semiconductor Device
23 Nov 23
A semiconductor device includes: a semiconductor substrate; a first insulating film provided on one surface of the semiconductor substrate; a first resistance layer including polysilicon provided on the first insulating film; a second insulating film provided on the first resistance layer; a second resistance layer including polysilicon provided on the second insulating film so as to overlap with the first resistance layer; a third insulating film provided on the second resistance layer; a first electrode provided over the third insulating film and electrically connected to the second resistance layer; and a second electrode electrically connected to the first resistance layer, wherein the first resistance layer and the second resistance layer each include a body part and a first contact part having a higher impurity concentration than the body part, and the respective first contact parts are in contact with each other.
Taichi KARINO, Hitoshi SUMIDA
Filed: 27 Mar 23
Utility
Semiconductor Device
23 Nov 23
Provided is a semiconductor device including: a collector region of a second conductivity type, which is provided between a drift region and a lower surface of a semiconductor substrate, in which the collector region includes a first region and a second region having a lower implantation efficiency of carriers with respect to the drift region than the first region, and when an area of the first region and an area of the second region per unit area of the collector region in a top view are respectively represented by S1 and S2, the implantation efficiency of the first region is represented by η1, and the implantation efficiency of the second region is represented by η2, an average implantation efficiency ηC given by an expression below is 0.1 or more and 0.4 or less: ηC=(S1×η1+S2×η2)/(S1+S2).
Tohru SHIRAKAWA, Kaname MITSUZUKA
Filed: 24 Apr 23
Utility
Semiconductor Apparatus and Method for Manufacturing Semiconductor Apparatus
16 Nov 23
A semiconductor apparatus includes an insulating substrate having a circuit board electrically connected to a semiconductor device, and a terminal member having a main terminal and a connection terminal bonded to the circuit board.
Yoshihiko KAWAKAMI
Filed: 15 Mar 23
Utility
Semiconductor Device and Fabrication Method for Semiconductor Device
16 Nov 23
A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions.
Motoyoshi KUBOUCHI, Kosuke YOSHIDA, Soichi YOSHIDA, Koh YOSHIKAWA, Nao SUGANUMA
Filed: 14 Jul 23
Utility
Semiconductor Device and Method of Manufacturing the Same
16 Nov 23
Provided is a method of manufacturing a semiconductor device that can lead a surface of sinter paste to be flattened before depositing a power semiconductor chip so as to achieve high-density packaging.
Takashi SAITO
Filed: 27 Jul 23
Utility
Semiconductor Device and Method for Determining Deterioration of Semiconductor Device
16 Nov 23
A semiconductor device includes a first input conductive plate on which a plurality of first semiconductor chips arranged in a first direction, a first output conductive plate extending in the first direction and being provided adjacent to the first input conductive plate, a case having first to fourth side walls for accommodating the first input conductive plate and the first output conductive plate, first main current wiring members, each of which connects one of the first output electrodes to a front surface of the first output conductive plate, a first detection terminal disposed in the first side wall, and a first detection wiring member connecting the front surface of the first output conductive plate to the first detection terminal.
Motohito HORI, Yoshinari IKEDA, Takaaki TANAKA, Qichen WANG
Filed: 9 Mar 23