1128 patents
Page 7 of 57
Utility
Semiconductor Module
7 Sep 23
A semiconductor module, including a first main wiring line connecting portion and a second main wiring line connecting portion, and a main output wiring line connecting portion is provided.
Ryo NOMAGUCHI, Takahito HARADA
Filed: 23 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a plurality of trenches provided in the semiconductor substrate, a plurality of first electrodes respectively provided in the plurality of trenches, an interlayer insulating film, a second electrode, and a third electrode.
Yoshihiro IKURA
Filed: 26 Jan 23
Utility
Semiconductor Device
7 Sep 23
A semiconductor device including a semiconductor unit that has a first arm part, which includes: first and second semiconductor chips having first and second control electrodes on their front surfaces, a first circuit pattern where the first and second semiconductor chips are disposed, a second circuit pattern to which the first and second control electrodes are connected, and a first control wire electrically connecting the first and second control electrodes and the second circuit pattern sequentially in a direction; and a second arm part, which includes third and fourth semiconductor chips having third and fourth control electrodes on their front surfaces, a third circuit pattern where the third and fourth semiconductor chips are disposed, a fourth circuit pattern to which the third and fourth control electrodes are connected, and a second control wire electrically connecting the third and fourth control electrodes and the fourth circuit pattern sequentially in the direction.
Mitsuhiro KAKEFU, Hiroaki ICHIKAWA
Filed: 12 May 23
Utility
Silicon Carbide Semiconductor Device
31 Aug 23
A semiconductor device including a semiconductor substrate, a parallel pn layer and a device structure provided in the semiconductor substrate, first and second electrodes respectively provided at two main surfaces of the semiconductor substrate, the first electrode being electrically connected to the device structure.
Syunki NARITA, Shinsuke HARADA
Filed: 17 Feb 23
Utility
Transformer and Power Converter
31 Aug 23
A transformer includes a primary winding, a feedback winding, and a non-feedback winding having substantially equal winding widths in an axial direction of a bobbin.
Hironori OSAWA, Ryo YONEMORI, Bin HE
Filed: 21 Feb 23
Utility
Semiconductor Device
31 Aug 23
A semiconductor device having a load.
Kei MINAGAWA
Filed: 28 Dec 22
Utility
Semiconductor Device, and Method of Manufacturing Semiconductor Device
31 Aug 23
A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate.
Hiroki WAKIMOTO, Hiroshi TAKISHITA, Takashi YOSHIMURA, Takahiro TAMURA, Yuichi ONOZAWA
Filed: 2 May 23
Utility
Semiconductor Device
17 Aug 23
A semiconductor device includes a semiconductor module that includes: an insulating circuit board, a semiconductor chip provided on a main surface of the insulating circuit board, and an external connection terminals provided on the main surface of the insulating circuit board; an external printed circuit board provided so as to face a main surface of the semiconductor module, the external printed circuit board having a through hole into which the external connection terminal is inserted; and an elastic member provided between the main surface of the semiconductor module and the external printed circuit board so as to apply a pressing force to the main surface of the semiconductor module.
Motohito HORI, Yoshinari IKEDA, Akira HIRAO
Filed: 3 Jan 23
Utility
Processing Circuit
17 Aug 23
Provided is a processing circuit for data of multiple bits including a first bit, a second bit, and a third bit, the processing circuit including a memory unit for storing a bit value of each bit, a first memory code, and a second memory code, a code generation unit for generating a first generation code indicating whether bit values of the first bit and the second bit stored by the memory unit are identical, and a second generation code indicating whether bit values of the second bit stored and the third bit stored by the memory unit are identical, and a determination unit for determining whether, based on a comparison result of between the first memory code and the first generation code and a comparison result between the second memory code and the second generation code, an error has occurred in the bit value of the second bit.
Kazuhiro MATSUNAMI
Filed: 20 Dec 22
Utility
Semiconductor Device
17 Aug 23
A semiconductor device includes case resin having frame part defining space in which semiconductor chip is disposed and bottom part located under the frame portion; external connection terminal having external terminal partially embedded in the frame part, and internal terminal disposed on the bottom part to extend from the external terminal into the space; wire electrically connecting the semiconductor chip and the internal terminal; and sealing resin formed in the space to cover the semiconductor chip, the wire, and the internal terminal.
Daisuke INOUE
Filed: 27 Dec 22
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.
Yosuke SAKURAI, Akio YAMANO, Seiji NOGUCHI, Ryutaro HAMASAKI, Takuya YAMADA, Daisuke OZAKI
Filed: 20 Dec 22
Utility
Semiconductor Apparatus and Vehicle
17 Aug 23
A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.
Hitoshi NAKATA, Yuichiro HINATA, Naoyuki KANAI
Filed: 28 Dec 22
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device including: a buffer region having one or more doping concentration peaks having a higher doping concentration than a drift region; and a lifetime control portion provided at a position overlapping a shallowest concentration peak closest to a lower surface of a semiconductor substrate among the doping concentration peaks provided in the buffer region, and in which a carrier lifetime shows a local minimum value, in which the semiconductor substrate has a critical depth position at which an integrated value, which is obtained by integrating doping concentrations from an upper end of the drift region toward the lower surface, reaches a critical integrated concentration of the semiconductor substrate, and a depth position at which the carrier lifetime shows the local minimum value in the lifetime control portion is arranged closer to the lower surface than the critical depth position.
Yuki SAWA, Motoyoshi KUBOUCHI, Takashi YOSHIMURA
Filed: 22 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
17 Aug 23
A semiconductor device includes: a semiconductor substrate; a plurality of trenches provided on a top surface side of the semiconductor substrate; am insulated gate electrode structure buried inside the respective trenches; an interlayer insulating film deposited on top surfaces of the semiconductor substrate and the insulated gate electrode structure; and a silicide layer deposited at a bottom of a contact hole penetrating the interlayer insulating film so as to be in contact with the top surface of the semiconductor substrate interposed between the trenches adjacent to each other, wherein at least a part of a bottom surface of the silicide layer is located at a higher position than a bottom surface of the interlayer insulating film.
Motoyoshi KUBOUCHI
Filed: 27 Dec 22
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device including a semiconductor substrate.
Yuki KARAMOTO, Kaname MITSUZUKA, Yoshihiro IKURA
Filed: 21 Apr 23
Utility
Semiconductor Device
17 Aug 23
Provided is a semiconductor device provided with a transistor section, the semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a plurality of trench portions extending from a front surface of the semiconductor substrate to the drift region, an emitter region of the first conductivity type which has a doping concentration higher than a doping concentration of the drift region and which is provided to extend from a trench portion to an adjacent trench portion among the plurality of trench portions on the front surface of the semiconductor substrate, and a trench bottom portion of a second conductivity type which is provided to a lower end of the trench portion, in which the transistor section has an electron passage region in which the trench bottom portion is not provided in a top view.
Yoshihiro IKURA, Seiji NOGUCHI, Yosuke SAKURAI, Ryutaro HAMASAKI
Filed: 18 Apr 23
Utility
Semiconductor Device and Manufacturing Method
17 Aug 23
Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.
Seiji NOGUCHI, Ryutaro HAMASAKI, Daisuke OZAKI, Yosuke SAKURAI, Takuya YAMADA
Filed: 21 Apr 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
10 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a plurality of trenches, a plurality of gate electrodes respectively provided in the trenches, a first conductive film, a first electrode, a second electrode, a plurality of first high-concentration regions, a plurality of second high-concentration regions, and a second conductive film.
Manabu TAKEI, Masakazu BABA, Shinsuke HARADA
Filed: 29 Dec 22
Utility
Switching Control Circuit, Power Supply Circuit
10 Aug 23
A switching control circuit for a power supply circuit including a first coil, a second coil configured to generate a voltage corresponding to a current flowing through the first coil, and a switching device configured to control the current flowing through the first coil.
Kiminori TANAKA
Filed: 23 Dec 22
Utility
Semiconductor Device and Semiconductor Device Manufacturing Method
10 Aug 23
A semiconductor device, including a semiconductor chip, a case having an opening formed therein and an inner wall communicating with the opening, and a sealing member.
Nobuhiro HIGASHI
Filed: 28 Dec 22