1128 patents
Page 10 of 57
Utility
Semiconductor Module, Semiconductor Device, and Semiconductor Device Manufacturing Method
11 May 23
A semiconductor module includes an insulating sheet which has a first surface and extends in a first direction and a first terminal.
Tadahiko SATO, Ryoichi KATO, Yuma MURATA
Filed: 29 Sep 22
Utility
Semiconductor Device and Manufacturing Method Therefor
11 May 23
A semiconductor device includes an insulated circuit board having a conductive pattern layer, a sintered member disposed on the conductive pattern layer, a semiconductor chip placed on the sintered member, and a coating material covering the semiconductor chip.
Yuichiro HINATA, Naoyuki KANAI, Takashi SAITO
Filed: 27 Sep 22
Utility
Semiconductor Module and Failed Element Determination Method Therefor
11 May 23
There is provided a semiconductor module capable of determining a semiconductor chip in which a short-circuit failure has occurred without being disassembled.
Tomohiro ISONO
Filed: 28 Sep 22
Utility
Integrated Circuit and Power Supply Circuit
11 May 23
An integrated circuit for a power supply circuit that generates an output voltage from an input voltage.
Yuta ENDO, Jun YABUZAKI
Filed: 22 Sep 22
Utility
Integrated Circuit
11 May 23
An integrated circuit having: a signal output circuit configured to output a first digital signal of a first logic level or of a second logic level in response to an analog signal; a first buffer circuit configured to raise and lower a voltage at a terminal of the integrated circuit in response to the first digital signal of a first logic level and a second logic level, respectively; a first digital delay circuit configured to receive a clock signal, and to delay the first digital signal, to output a resultant signal as a first delay signal, based on the received clock signal; and a second buffer circuit configured to raise the voltage at the terminal in response to the first delay signal of the first logic level, and lower the voltage at the terminal in response to the first delay signal of the second logic level.
Hiroyuki NAKAJIMA
Filed: 27 Sep 22
Utility
Semiconductor Apparatus
11 May 23
A semiconductor apparatus includes a first connection terminal and a second connection terminal, a drive circuit including one or more power semiconductor elements, a control circuit to control the one or more power semiconductor elements, a circuit substrate, a passive element on the circuit substrate, and a first bus bar and a second bus bar.
Kenichiro SATO
Filed: 29 Sep 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
11 May 23
A semiconductor device includes a temperature sensing unit including a plurality of temperature sensing diode portions each including an anode portion provided above a front surface of a semiconductor substrate and a cathode portion coupled to the anode portion and connected in series and a resistance portion of an N type electrically connected to the temperature sensing diode portion.
Takeyoshi NISHIMURA
Filed: 25 Sep 22
Utility
Manufacturing Method of Semiconductor Device and Semiconductor Device
11 May 23
Provided is a manufacturing method of a semiconductor device, the manufacturing method including implanting a first dopant of a first conductivity type from an implantation surface of a semiconductor substrate into a first implantation position and implanting a second dopant of the first conductivity type from the implantation surface of the semiconductor substrate into a second implantation position having a larger distance from the implantation surface than the first implantation position after implanting the first dopant.
Norihiro KOMIYAMA, Seiji NOGUCHI, Yoshihiro IKURA, Yosuke SAKURAI, Yuichi HARADA
Filed: 24 Oct 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
11 May 23
There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.
Tatsuya NAITO
Filed: 5 Jan 23
Utility
Method of Manufacturing Semiconductor Device
4 May 23
Semiconductor device including first semiconductor layer of a first conductivity type, second semiconductor layer of a second conductivity type at a surface of the first semiconductor layer, third semiconductor layer of the first conductivity type selectively provided at a surface of the second layer, and gate electrode embedded in a trench via a gate insulating film.
Makoto SHIMOSAWA
Filed: 30 Dec 22
Utility
Power Conversion Device, Control Device for Power Conversion Device, and Power Conversion Control Method
4 May 23
This power conversion device includes a control unit that controls a switching operation of a switching element of the inverter unit.
Yukihiro NISHIKAWA, Masahito SHOYAMA, Koki HEBISHIMA
Filed: 27 Dec 22
Utility
Test Circuit and Testing Method
27 Apr 23
A test circuit for testing a switching device.
Mitsuru YOSHIDA
Filed: 22 Sep 22
Utility
Drive Device, Drive Method, and Power Conversion Device
27 Apr 23
According to the present disclosure, the deterioration of SiC-MOSFETs is suppressed.
Hiromu TAKUBO, Ryoga KIGUCHI
Filed: 30 Sep 22
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Apr 23
A bus bar includes a laminated body formed by directly laminating a flat plate-shaped first conductive plate, flat plate-shaped insulating sheet, and flat plate-shaped second conductive plate.
Hiroto WATANABE, Sho TAKANO
Filed: 29 Sep 22
Utility
Analysis Method, Storage Medium, and Manufacturing Method of Semiconductor Device
20 Apr 23
Provided is an analysis method including acquiring measurement values of a characteristic of a plurality of semiconductor devices of a measurement group in which a concentration of a first impurity and an irradiation amount of a charged particle beam are included in a set range, generating a measurement distribution showing a distribution, in the measurement group, of the measurement values of the characteristic, generating a virtual distribution in which samples of the characteristic are distributed in a range that is wider than the measurement distribution by simulating, based on the measurement distribution, the characteristic of a plurality of the semiconductor devices that is virtual, and calculating a defect rate in the virtual distribution.
Yusuke SHIMIZU
Filed: 27 Sep 22
Utility
Semiconductor Module
20 Apr 23
There is provided a semiconductor module capable of preventing the adhesion of an epoxy resin to terminals to which at least one of a large current and a high voltage is supplied.
Hayato NAKANO
Filed: 25 Aug 22
Utility
Power Supply Circuit
20 Apr 23
A power supply circuit including a transformer, a transistor controlling an inductor current flowing through a primary coil of the transformer, an integrated circuit configured to switch the transistor, and a feedback circuit configured to, when a load current is smaller and larger than a predetermined value, generate a feedback voltage to cause the output voltage to reach the target level, and to lower the output voltage, respectively.
Hiroki YAMANE
Filed: 24 Aug 22
Utility
Semiconductor Device and Method for Manufacturing Semiconductor Device
20 Apr 23
A semiconductor module (semiconductor device) includes a case that has a side wall to form a frame, the side wall having a concave portion, a multi-layer structure in which a first terminal, an insulating sheet, and a second terminal are stacked in that order and which is disposed on the concave portion, and a beam member that is attached to the concave portion of the case to fix the multi-layer structure disposed on the concave portion.
Akito NAKAGOME, Katsumi TANIGUCHI, Ryoichi KATO, Yuma MURATA
Filed: 27 Sep 22
Utility
Semiconductor Device
20 Apr 23
Provided is a semiconductor device comprising a semiconductor substrate, the semiconductor substrate comprising an active portion, a second conductivity type circumferential well region surrounding the active portion in a top view, and a trench portion provided in the active portion on an upper surface of the semiconductor substrate, wherein the active portion includes a center portion including a first conductivity type emitter region, and a circumferential portion surrounding the center portion, wherein the center portion includes a second conductivity type active side bottom region provided across bottoms of at least two of the trench portion, the circumferential portion includes a second conductivity type circumferential side bottom region electrically connected to the circumferential well region, facing the active side bottom region, and provided at the bottom of the trench portion, and the active side bottom region and the circumferential side bottom region are provided apart from each other.
Daisuke OZAKI, Seiji NOGUCHI, Yosuke SAKURAI, Ryutaro HAMASAKI, Takuya YAMADA, Yoshihiro IKURA
Filed: 19 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
20 Apr 23
A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.
Katsumi TANIGUCHI, Yoshinari IKEDA, Ryoichi KATO, Yuma MURATA, Akito NAKAGOME
Filed: 24 Aug 22