1128 patents
Page 11 of 57
Utility
Semiconductor Device and Semiconductor Device Manufacturing Method
20 Apr 23
A semiconductor module includes a first case having a first side face, a first insulating paper disposed on the first case and having a first width in a first direction and having a notch with a second width smaller than the first width, a first terminal between the first case and the first insulating paper, having an exposed portion exposed from the first insulating paper at an area where the notch is formed, and a second terminal on the first insulating paper at a side opposite to a side where the first terminal is disposed.
Yuma MURATA, Ryoichi KATO, Shinji TADA
Filed: 26 Aug 22
Utility
Semiconductor Device Manufacturing Method and Semiconductor Device
13 Apr 23
A semiconductor device manufacturing method includes preparing a semiconductor chip and a conductive plate having a front surface that includes a disposition area on which the semiconductor chip is to be disposed, forming a supporting portion in a periphery of the disposition area of the conductive plate such that the supporting portion protrudes from a bottom of the disposition area in an upward direction orthogonal to the front surface of the conductive plate, bonding the semiconductor chip to the disposition area via bonding material applied to the disposition area, coating the front surface of the conductive plate, including the semiconductor chip and the supporting portion, with a coating layer, and after the coating, sealing the front surface of the conductive plate, including the semiconductor chip and the supporting portion, with sealing material.
Yoshiaki TAKAHASHI
Filed: 26 Aug 22
Utility
Drive Device for Voltage-controlled Semiconductor Element
13 Apr 23
A drive device for a voltage-controlled semiconductor element.
Masahiro TAOKA
Filed: 13 Dec 22
Utility
Semiconductor Module
13 Apr 23
A semiconductor module, including a semiconductor chip, a sealed main body portion sealing the semiconductor chip and having a pair of attachment holes penetrating therethrough, a heat dissipation plate in contact with the sealed main body portion.
Toshio DENTA
Filed: 29 Aug 22
Utility
Test Method
13 Apr 23
Provided is a test method comprising: preparing a plurality of groups for setting, each of which has a plurality of semiconductor devices for setting, and assigning an inspection voltage to each of the respective plurality of groups for setting; performing first testing by applying the assigned inspection voltage to the semiconductor devices for setting, and testing, at a first temperature, the plurality of semiconductor devices for setting included in each of the plurality of groups for setting; performing second testing by testing, at a second temperature different from the first temperature, a semiconductor device for setting having been determined as being non-defective and by detecting a breakdown voltage at which the semiconductor device for setting is broken; acquiring a relationship between the inspection voltage and the breakdown voltage; and setting an applied voltage used when testing a semiconductor device under test at the first temperature, based on the acquired relationship.
Shuhei TATEMICHI, Kenichi ISHII
Filed: 17 Aug 22
Utility
Power Conversion Device, Magnetic Component, and Manufacturing Method of Power Conversion Device
13 Apr 23
A magnetic component in a power conversion device includes a bobbin that has a rod-shaped central portion and holds a core and a winding member.
Kou TANIGUCHI
Filed: 20 Sep 22
Utility
Power Conversion Device
6 Apr 23
This power conversion device includes an inverter, a DC-DC converter, and a flat plate-shaped base where the inverter and the DC-DC converter are disposed on the front side and the back side.
Toshiaki AZUMA, Shun FUKUCHI
Filed: 22 Aug 22
Utility
Power Conversion Device
6 Apr 23
In this power conversion device, a DC-DC converter substrate on which a DC-DC converter element is mounted is attached to a base portion along the front surface or back surface of the flat plate-shaped base portion.
Toshiaki AZUMA, Shun FUKUCHI
Filed: 22 Aug 22
Utility
Device, Semiconductor Apparatus, Gate Driver, and Power Module
6 Apr 23
Provided is a device including a series circuit in which a rectifying element and a fuse element are connected in series, in which one end on an anode side of the rectifying element in the series circuit is connected to a first connection point having a reference potential, and another end on a cathode side of the rectifying element in the series circuit is connected to a second connection point that is to have a potential higher than the reference potential.
Masashi AKAHANE
Filed: 17 Aug 22
Utility
Semiconductor Device and Method for Manufacturing Semiconductor Device
30 Mar 23
A semiconductor device includes: an electrically conductive plate; a semiconductor chip on the electrically conductive plate, the semiconductor chip having a front main electrode on a front surface thereof and a back main electrode on a back surface thereof, the back main electrode being bonded to the electrically conductive plate; and a heat radiating member that is bonded to the front main electrode via a conductive adhesive.
Hiroaki ICHIKAWA
Filed: 1 Aug 22
Utility
Semiconductor Device
30 Mar 23
A semiconductor device, including a board, a semiconductor module disposed on a front surface of the board, and a case that includes (1) side wall portions that are disposed on the front surface of the board and that surround, with the board, a storage area including the semiconductor module, (2) a cover portion that is disposed on the side wall portions to cover the storage area, the cover portion having a terminal opening formed therein, and (3) a guiding projection portion formed on an inner surface of the cover portion, and protruding toward the storage area.
Akira ISO
Filed: 27 Jul 22
Utility
Silicon Carbide Semiconductor Device
30 Mar 23
An n--type drift layer is an n--type epitaxial layer doped with nitrogen as an n-type dopant and is co-doped with aluminum as a p-type dopant, the n--type drift layer containing the nitrogen and aluminum substantially uniformly throughout.
Takeshi TAWARA, Shinsuke HARADA
Filed: 29 Nov 22
Utility
Insulated Gate Semiconductor Device
23 Mar 23
An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type; a base contact region of the second conductivity-type; trenches penetrating the injection control region to reach the carrier transport layer; an insulated gate structure provided inside the respective trenches; an upper buried region of the second conductivity-type being in contact with a bottom surface of the injection control region; a lower buried region of the second conductivity-type being in contact with a bottom surface of the upper buried region and a bottom surface of the respective trenches; and a high-concentration region of the first conductivity-type provided inside the carrier transport layer to be in contact with a part of a bottom surface of the lower buried region.
Syunki NARITA
Filed: 23 Nov 22
Utility
Insulated Gate Semiconductor Device
23 Mar 23
An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type provided at an upper part of the injection control region; a base contact region of the second conductivity-type provided at an upper part of the injection control region; trenches penetrating the injection control region to reach the carrier transport layer; an insulated gate structure provided inside the respective trenches; an upper buried region of the second conductivity-type being in contact with a bottom surface of the injection control region; and a lower buried region of the second conductivity-type being in contact with a bottom surface of the upper buried region and a bottom surface of the respective trenches, wherein the lower buried region is separated from each other via the carrier transport layer between the trenches.
Syunki NARITA
Filed: 29 Nov 22
Utility
Semiconductor Devcie and Manufacturing Method for Semiconductor Device
23 Mar 23
A semiconductor device includes a heatsink, an insulating resin layer on the heatsink, and a metallic plate including a first surface in contact with a first region of the insulating resin layer and a second surface to which a semiconductor chip is adhered.
Masashi HOYA
Filed: 25 Jul 22
Utility
Semiconductor Unit and Semiconductor Device
23 Mar 23
A semiconductor unit includes a plurality of semiconductor chips, and an insulated circuit board including an insulating plate having, in a plan view of the semiconductor unit, a rectangular shape surrounded by first and second sides opposite to each other and third and fourth sides perpendicular to the first and second sides and opposite to each other, an output circuit pattern and an input circuit pattern on a front surface of the insulating plate.
Taichi ITOH
Filed: 25 Nov 22
Utility
Drive Device for Voltage-controlled Semiconductor Element
23 Mar 23
A drive device for driving a voltage-controlled semiconductor element.
Hiroaki ICHIKAWA
Filed: 25 Nov 22
Utility
Integrated Circuit and Power Supply Circuit
23 Mar 23
An integrated circuit for a power supply circuit, including: a first command value output circuit outputting a first command value to turn on a transistor of the power supply circuit for a first time period; an on signal output circuit outputting an on signal to turn on the transistor; a delay circuit delaying the on signal by a predetermined time period; a correction circuit correcting the first command value, to output a second command value to turn on the transistor for a second time period; and a driver circuit turning on and off the transistor based respectively on the delayed on-signal and the second command value.
Ryuunosuke ARAUMI, Ryuji YAMADA
Filed: 28 Jul 22
Utility
Semiconductor Device and Manufacturing Method
16 Mar 23
Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity type, a dielectric film provided on an upper surface of the semiconductor substrate, a high concentration region of the first conductivity type provided in contact with the dielectric film below the dielectric film and having a higher doping concentration than the drift region, and a fall off region that is provided in contact with the dielectric film below the dielectric film and in which a concentration of the dopant of the second conductivity type decreases toward the dielectric film.
Koh YOSHIKAWA, Kosuke YOSHIDA, Nao SUGANUMA
Filed: 22 Aug 22
Utility
Power Converter
16 Mar 23
A power converter, includes: a first line to which a first voltage is applied; a second line to which a second voltage lower than the first voltage is applied; a third line to which a third voltage lower than the second voltage is applied; a first bridge circuit that is provided between the first line and the second line, the first bridge circuit including a plurality of first switching elements; a second bridge circuit that is provided between the second line and the third line, the second bridge circuit including a plurality of second switching elements; and a voltage output circuit configured to generate a predetermined direct current (DC) voltage based on operations of the first and second bridge circuits.
Motoyoshi KUBOUCHI
Filed: 28 Jul 22