1128 patents
Page 13 of 57
Utility
Testing Method and Manufacturing Method
2 Mar 23
Provided is a testing method for testing a semiconductor device provided with a main element portion including a main transistor portion and a main diode portion, and a sensing transistor portion for current detection, the testing method having: operating an element by causing a diode operation of the sensing transistor portion in the semiconductor device in a chip or wafer state; measuring the element by measuring a voltage-current characteristic showing a relationship between a voltage between main terminals of the sensing transistor portion and a current flowing through the main terminals during the diode operation; and determining the element by determining a defectiveness of the semiconductor device based on the voltage-current characteristic.
Atsushi SHOJI, Akira NISHIMURA
Filed: 19 Jul 22
Utility
Semiconductor Device and Method of Manufacturing the Same
2 Mar 23
A semiconductor device includes a semiconductor unit including a semiconductor chip, a cooling plate having a cooling front surface on which the semiconductor unit is disposed, a case disposed along an outer edge of the cooling front surface at the outer edge via an adhesive so as to surround the semiconductor unit, and a sealing member sealing the semiconductor unit disposed on the cooling plate inside the case.
Kazuo ENOMOTO
Filed: 27 Jun 22
Utility
Manufacturing Method of Semiconductor Device
2 Mar 23
Provided is a manufacturing method of a semiconductor device including a semiconductor substrate having an upper surface.
Tsutomu KATO
Filed: 21 Jun 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
23 Feb 23
After trench etching but before formation of a gate insulating film, a 15-minute to 60-minute heat treatment under a mixed gas atmosphere containing nitric oxide gas and nitrogen gas at a temperature from 1200 degrees C. to 1350 degrees C. and a 30-minute to 75-minute heat treatment under a nitrogen gas atmosphere held at the temperature of the 15-minute to 60-minute heat treatment are successively performed, oxidizing etching damage of inner walls of trenches.
Yasuyuki KAWADA
Filed: 30 Jun 22
Utility
Semiconductor Device
23 Feb 23
A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized.
Yuko NAKAMATA
Filed: 25 May 22
Utility
Semiconductor Module
23 Feb 23
A semiconductor module including a first switching device coupled to a first line, a terminal, at which a first voltage corresponding to a first current flowing through the first switching device is generated, coupled to the first switching device, a second switching device coupled to the first line for allowing a second current corresponding to the first current to flow therethrough, a voltage generation circuit configured to apply, to a second line, a second voltage lower than a power supply voltage, a resistor, across which a third voltage corresponding to the second current is generated, coupled between the second switching device and the terminal, a reference voltage circuit coupled to the terminal for generating a fourth voltage, and a comparator circuit coupled between the first and second lines, for determining whether the first switching device is in an overcurrent state based on a comparison between the third and fourth voltages.
Shigemi MIYAZAWA
Filed: 22 Jun 22
Utility
Driving Apparatus
23 Feb 23
A driving apparatus for driving a switching device is provided, the driving apparatus including: a high potential line; a high-potential-side switching control unit configured to perform switching as to whether to connect a control terminal of the switching device to the high potential line; a first resistor element located on a high-potential side and disposed in series with the high-potential-side switching control unit on a path from the control terminal of the switching device to the high potential line; a high-potential-side capacitor provided in parallel with the first resistor element on the path from the control terminal of the switching device to the high potential line; and a high-potential-side discharge control unit configured to control whether to discharge the high-potential-side capacitor.
Ryoga KIGUCHI, Hiromu TAKUBO
Filed: 20 Jun 22
Utility
Semiconductor Device
16 Feb 23
A semiconductor device includes: a semiconductor base body of a first conductivity type; a high-potential-side terminal connected to the semiconductor base body; a horizontal control circuit element deposited at an upper part of the semiconductor base body; a signal input terminal connected to a control electrode of the control circuit element; a low-potential-side terminal connected to a main electrode region of the control circuit element; an input-side diode connected in a forward direction between the signal input terminal and the semiconductor base body; and a vertical protective element connected between the semiconductor base body and the low-potential-side terminal.
Yoshiaki TOYODA, Hideaki KATAKURA
Filed: 22 Jun 22
Utility
Semiconductor Device Manufacturing Method
16 Feb 23
A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame.
Masanori TANAKA, Akira FURUTA
Filed: 24 Jun 22
Utility
Silicon Carbide Semiconductor Device
16 Feb 23
In an entire intermediate region between an active region and an edge termination region, a p+-type region is provided between a p-type base region and a parallel pn layer.
Masakazu BABA, Shinsuke HARADA
Filed: 31 Oct 22
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
16 Feb 23
A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides.
Naoki TAKIZAWA
Filed: 31 Oct 22
Utility
Integrated Circuit and Power Supply Circuit
16 Feb 23
An integrated circuit for a power supply including a power transistor, the integrated circuit being configured to switch and drive the power transistor.
Hiroaki MATSUMOTO, Masayuki YAMADAYA, Yoshinori KOBAYASHI
Filed: 22 Jun 22
Utility
Semiconductor Device
16 Feb 23
A semiconductor device having an active portion and a gate pad portion on a semiconductor substrate includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type.
Keiji OKUMURA
Filed: 26 Oct 22
Utility
Semiconductor Module, Method for Manufacturing Semiconductor Module, and Level Different Jig
16 Feb 23
A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base.
Kazunaga ONISHI, Takashi MASUZAWA, Hiromichi GOHARA
Filed: 1 Nov 22
Utility
Semiconductor Device and Method of Manufacturing the Same
9 Feb 23
A method of manufacturing a semiconductor device, the method including: preparing an insulated circuit substrate including a conductive plate; partially fixing a plate-like bonding member onto the conductive plate so as to make a positioning of the bonding member in a horizontal direction; mounting a semiconductor chip on the bonding member; and heating and melting the bonding member so as to form a bonding layer for bonding the insulated circuit substrate and the semiconductor chip each other.
Yuji IIZUKA
Filed: 29 Jun 22
Utility
Uninterruptible Power Supply Device
9 Feb 23
This uninterruptible power supply device includes an input module provided with a plurality of conductor wires having a plate shape including at least a plurality of AC input wires, and an uninterruptible power supply module.
Takahiro KINUTA
Filed: 24 Oct 22
Utility
Steam Turbine Member
9 Feb 23
A steam turbine member has suppressed adhesion of scale for a long time without deterioration of corrosion resistance and the like of a turbine.
Yuya NAKASHIMA, Masato HIROTA, Naoya YOSHIMI
Filed: 25 Oct 22
Utility
Semiconductor Device
9 Feb 23
Provided is a semiconductor device, comprising: a semiconductor substrate; a transistor portion including an emitter region on the top of the semiconductor substrate; a diode portion including a cathode region on the bottom of the semiconductor substrate and a second conductivity type overlap region in a region other than the cathode region and arranged alongside to the transistor portion a preset arrangement direction on the top of the semiconductor substrate; and an interlayer dielectric film provided between the semiconductor substrate and an emitter electrode and including a contact hole for connecting the emitter electrode and the diode portion.
Yosuke SAKURAI, Seiji NOGUCHI, Toru AJIKI
Filed: 21 Oct 22
Utility
Semiconductor Device Manufacturing Method
9 Feb 23
Provided is a semiconductor device manufacturing method comprising: forming an impurity region including a first impurity on a semiconductor wafer; annealing the semiconductor wafer in a state where a lower surface of the semiconductor wafer is supported; and removing at least a part of the impurity region by removing a region including the lower surface of the semiconductor wafer.
Masayuki MOMOSE
Filed: 21 Jun 22
Utility
Semiconductor Device
9 Feb 23
Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region.
Yuichi HARADA, Seiji NOGUCHI, Norihiro KOMIYAMA, Yoshihiro IKURA, Yosuke SAKURAI, Yoshihisa SUZUKI
Filed: 23 Oct 22