1128 patents
Page 9 of 57
Utility
Overcurrent Detection Circuit, Drive Control Device, and Power Conversion Device
20 Jul 23
An overcurrent detection circuit including a detection unit for detecting whether a current flowing between main terminals of a main switching device used by a power conversion device is an overcurrent, and a switching unit for switching among thresholds used for determining the overcurrent in the detection unit according to in which phase of the power conversion device the main switching device is used, in which the detection unit includes a plurality of comparison units for comparing a parameter according to the current flowing between main terminals, and thresholds different from each other, and the switching unit is for switching a comparison unit to use for detection of the overcurrent among the plurality of comparison units.
Kenshi TERASHIMA
Filed: 22 Mar 23
Utility
Semiconductor Apparatus and Vehicle
13 Jul 23
A semiconductor apparatus a semiconductor module including a semiconductor device and a resin section covering the periphery of the semiconductor device, and a cooler arranged below the semiconductor device.
Daiki YOSHIDA, Nobuhiro HIGASHI, Tsubasa NAKAMURA
Filed: 25 Nov 22
Utility
Semiconductor Device
13 Jul 23
A semiconductor device includes: a lower electrode; a first dielectric layer provided on the lower electrode; a first upper electrode provided on the first dielectric layer; a second dielectric layer provided on the first upper electrode; a second upper electrode provided on the second dielectric layer and electrically connected to the lower electrode; a third dielectric layer provided on the second upper electrode; and a third upper electrode provided on the third dielectric layer and electrically connected to the first upper electrode, wherein a first capacitor between the lower electrode and the first upper electrode, a second capacitor between the first upper electrode and the second upper electrode, and a third capacitor between the second upper electrode and the third upper electrode are connected in parallel with each other.
Masaharu YAMAJI
Filed: 1 Dec 22
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode.
Takumi FUJIMOTO
Filed: 13 Mar 23
Utility
Semiconductor Device and Semiconductor Module
13 Jul 23
Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7.
Hayato NAKANO
Filed: 22 Mar 23
Utility
Silicon Carbide Semiconductor Device
13 Jul 23
A silicon carbide semiconductor device has a termination region, which includes first to fourth semiconductor regions, one provided on the outer side of another.
Shingo HAYASHI
Filed: 30 Nov 22
Utility
Semiconductor Device
6 Jul 23
A cooling device including a rectangular top plate in a plan view having a front surface on which a semiconductor module is disposed and a rear surface having a sidewall connection region, a flow pass region, and an outer edge region.
Takahiro KOYAMA, Daiki YOSHIDA, Yuichiro HINATA, Takafumi YAMADA, Yoshihiro TATEISHI
Filed: 15 Mar 23
Utility
Method for Selecting Scale-dissolving Agent
29 Jun 23
A method provides for selecting a scale-dissolving agent suitable for components of the scale.
Taichiro Kato, Kuniyuki Takahashi, Shinya Ui, Hideki Yamamoto
Filed: 23 Feb 23
Utility
Semiconductor Resistance Device
29 Jun 23
A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias.
Yoshiaki TOYODA
Filed: 1 Nov 22
Utility
Semiconductor Device and Method for Manufacturing Same
29 Jun 23
A semiconductor device includes: a plate-shaped terminal including one main surface and another main surface and having one end electrically connected to a semiconductor chip; a nut arranged on the one main surface side at another end of the terminal; a nut cover provided on the one main surface side at the other end of the terminal and configured to cover the nut; and a case configured to surround the semiconductor chip and integrate the terminal and the nut cover, wherein the nut cover includes a protruding portion protruding from a lower portion of the nut cover to the one end side of the terminal.
Hideaki TAKAHASHI
Filed: 28 Oct 22
Utility
Semiconductor Device Manufacturing Method
29 Jun 23
To provide a manufacturing method of a semiconductor device including a semiconductor substrate, the manufacturing method of the semiconductor device including a sticking for sticking a protection tape to a first surface of the semiconductor substrate, a first grinding for supporting the protection tape and grinding a second surface of the semiconductor substrate that is a surface on the opposite side of the first surface, a protection tape cutting for supporting the second surface of the semiconductor substrate and flattening the protection tape, and a second grinding for supporting the protection tape and grinding the second surface of the semiconductor substrate.
Michiya KITANO
Filed: 27 Feb 23
Utility
Manufacturing Method for Semiconductor Device
29 Jun 23
A semiconductor device manufacturing method, including: a first treatment process for reducing an amount of oxygen and carbon adsorbed to a main surface of the conductive plate to 20 atomic % or less; a first checking process for checking whether the conductive plate has a temperature no higher than a reference temperature; a chip placement process for placing, responsive to the conductive plate having the temperature no higher than the reference temperature, a semiconductor chip on the main surface of the conductive plate via a sinter material; a first bonding process for applying heat and pressure to the sinter material according to a first condition that allows the organic substance to partially remain; a preparatory process for making preparations for further bonding the semiconductor chip; and a second bonding process for further applying heat and pressure to the sinter material according to a second condition that sinters the sinter material.
Tsunehiro NAKAJIMA
Filed: 27 Oct 22
Utility
Semiconductor Device and Method of Manufacturing the Same
29 Jun 23
Provided is a semiconductor device including: a drift region of a first conductivity type provided in a semiconductor substrate; a base region of a second conductivity type provided above the drift region; an emitter region of a first conductivity type provided above the base region; a second conductivity type region provided above the drift region; a plurality of trench portions extending in a predetermined extending direction; and an interlayer dielectric film provided above the semiconductor substrate and includes a first contact hole portion and second contact hole portion, in which the second conductivity type region and the emitter region are provided alternately in the extending direction, the first contact hole portion is provided alternately with the second contact hole portion in the extending direction, and a lower end of the first contact hole portion is provided at a different depth from a lower end of the second contact hole portion.
Motoyoshi KUBOUCHI, Makoto SHIMOSAWA, Makoto ENDOU
Filed: 23 Dec 22
Utility
Silicon Carbide Semiconductor Device
29 Jun 23
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches.
Hiroyuki FUJISAWA, Akimasa KINOSHITA
Filed: 17 Feb 23
Utility
Semiconductor Module
25 May 23
A semiconductor module, including: plurality of output elements provided to constitute an upper arm and a lower arm; a resin case provided surrounding an accommodation space for accommodating the output elements; an arm-to-arm wiring line for connecting the upper arm with the lower arm; an output terminal, which is connected to the arm-to-arm wiring line and is for outputting output currents from the output elements to a load being external to the semiconductor module; a sense terminal, which is connected to the arm-to-arm wiring line and is for detecting currents that flow in the output elements; and an inductor provided between a connection point for connecting the arm-to-arm wiring line with the output terminal, and the output terminal is provided.
Masayoshi NAKAZAWA
Filed: 25 Jan 23
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
25 May 23
A method of manufacturing a silicon carbide semiconductor device includes selectively forming a semiconductor region of a conductivity type at a first main surface of a semiconductor substrate containing silicon carbide; forming a nickel layer above the semiconductor region; ion-implanting aluminum in the nickel layer; performing a heat treatment to the nickel layer implanted with the aluminum to thereby form an ohmic contact layer in ohmic contact with the semiconductor region; forming a first electrode that is in contact with the ohmic contact layer, the semiconductor region, and the semiconductor substrate; and forming a second electrode on a second main surface of the semiconductor substrate.
Takeyoshi NISHIMURA
Filed: 22 Sep 22
Utility
Semiconductor Device and Method for Manufacturing the Same
18 May 23
A semiconductor device includes: a semiconductor base body; a semiconductor chip; a sintering material layer bonded to a lower surface of the semiconductor chip and having a thickness decreasing toward an outer periphery of the semiconductor chip; and a conductive plate having a main surface facing the lower surface of the semiconductor chip and a recessed portion which the sintering material layer contacts in the main surface, the recessed portion having a depth decreasing toward the outer periphery of the semiconductor chip.
Ryotaro TSURUOKA
Filed: 27 Oct 22
Utility
Semiconductor Device Manufacturing Method and Jig Set
18 May 23
A semiconductor device manufacturing method, includes: a preparing process for preparing a conductive plate, a semiconductor chip arranged over the conductive plate with a first bonding material therebetween, and a connection terminal including a bonding portion arranged over the semiconductor chip with a second bonding material therebetween; a first jig arrangement process for arranging a first guide jig, through which a first guide hole pierces, over the conductive plate, such that the first guide hole corresponds to the bonding portion in a plan view of the semiconductor device; and a first pressing process for inserting a pillar-shaped pressing jig, which includes a pressing portion at a lower end portion thereof, into the first guide hole, and pressing the bonding portion of the connection terminal to a side of the conductive plate with the pressing portion.
Manabu ISHIKAWA
Filed: 27 Sep 22
Utility
Insulated-gate Semiconductor Device and Method of Manufacturing the Same
18 May 23
An insulated-gate semiconductor device, which has trenches arranged in a chip structure, the trenches defining both sidewalls in a first and second sidewall surface facing each other, includes: a first unit cell including a main-electrode region in contact with a first sidewall surface of a first trench, a base region in contact with a bottom surface of the main-electrode region and the first sidewall surface, a drift layer in contact with a bottom surface of the base region and the first sidewall surface, and a gate protection-region in contact with the second sidewall surface and a bottom surface of the first trench; and a second unit cell including an operation suppression region in contact with a first sidewall surface and a second sidewall surface of a second trench, wherein the second unit cell includes the second trench located at one end of an array of the trenches.
Keiji OKUMURA
Filed: 17 Jan 23
Utility
Semiconductor Device and Method for Manufacturing Semiconductor Device
18 May 23
A semiconductor device includes a semiconductor substrate that includes a drift layer, a drain layer, a first well region and a second well region in the drift layer, a first source region selectively formed in the first well region, and a second source region selectively formed in the second well region; a gate insulating film selectively disposed on the semiconductor substrate and covering a portion of the drift layer sandwiched by the first well region and the second well region, the gate insulating film including a first portion and a second portion thicker than the first portion, arranged side by side so as to be laterally continuous to each other, the first portion being arranged on the first well region, the second portion being arranged on the second well region; and a gate electrode disposed on the gate insulating film that includes the first and second portions.
Takayuki SHIMATOU
Filed: 3 Oct 22