1128 patents
Page 8 of 57
Utility
Cooler and Semiconductor Device
10 Aug 23
A cooler has a cooling main body portion that includes: a cooling wall in the Y direction including a first face with a heat generator thereon, and a second face opposite thereto; first and second flow path extending in the Y direction, the first flow path allowing refrigerant to flow in, and the second flow path allowing the refrigerant to flow out; cooling flow paths with a part of a wall surface comprising the second face; a partition spaced from the cooling wall in the Z direction, separating the first and the second flow paths from the cooling flow paths; and a first narrowing portion at a communication portion between a cooling flow path and the first flow path.
Yasutaka SANUKI, Jun NAKAMURA, Yuuji FUJIMOTO
Filed: 28 Nov 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
10 Aug 23
A semiconductor device has: a silicon carbide semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the first conductivity type; a trench; a gate insulating film; a gate electrode; a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type.
Shinichiro MATSUNAGA, Masakazu BABA, Shinsuke HARADA
Filed: 29 Dec 22
Utility
Silicon Carbide Semiconductor Device
10 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate having an active region and a termination region that surrounds the active region in a top view, a first parallel pn layer provided in the semiconductor substrate in the active region, a second parallel pn layer provided in the semiconductor substrate in the termination region, a device structure provided in the active region, a first electrode electrically connected to the device structure, a second electrode, a first semiconductor region selectively provided in the termination region, and a second semiconductor region provided between the second parallel pn layer and the first semiconductor region, and in contact with the first semiconductor region.
Manabu TAKEI, Masakazu BABA, Masakazu OKADA, Shinsuke HARADA
Filed: 28 Dec 22
Utility
Integrated Circuit and Power Supply Circuit
10 Aug 23
An integrated circuit for a power supply circuit of a resonant type, the power supply circuit including a resonant circuit including a coil and a capacitor coupled in series, and a switching device controlling a resonant current flowing through the resonant circuit.
Takato SUGAWARA
Filed: 22 Dec 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
3 Aug 23
A silicon carbide semiconductor device, including a semiconductor substrate; a first semiconductor region and a second semiconductor region provided in the semiconductor substrate; a plurality of third semiconductor regions selectively provided in the semiconductor substrate, a plurality of first and second trenches penetrating through the second and third semiconductor regions and reaching the first semiconductor region; a plurality of gate electrodes respectively provided in the first trenches; a plurality of conductive films respectively embedded in the second trenches, junction interfaces between the first semiconductor region and the conductive films forming a plurality of Schottky barriers; a first electrode and a second electrode; and a plurality of Schottky barrier diodes that respectively include the plurality of Schottky barriers.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23
Utility
Superjunction Semiconductor Device
3 Aug 23
A superjunction semiconductor device having a termination structure portion surrounding an active region in a plan view.
Naoki KUMAGAI, Masakazu OKADA, Shinsuke HARADA
Filed: 7 Apr 23
Utility
Semiconductor Device and Manufacturing Method Thereof
3 Aug 23
A semiconductor device includes a support, a semiconductor module, a heat transfer medium, and a first frame member.
Takahiro KOYAMA, Hiromichi GOHARA
Filed: 28 Dec 22
Utility
Semiconductor Device
3 Aug 23
A semiconductor device having a connecting region between an active region and an edge region.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
3 Aug 23
By a first ion-implantation of a p-type impurity, first and second p+-type regions for mitigating electric field of trench bottoms are formed in surface regions of an n−-type epitaxial layer that constitutes an n−-type drift region.
Masakazu BABA, Shinsuke HARADA
Filed: 23 Jan 23
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
3 Aug 23
Provided is a semiconductor device including a gate trench portion and a first trench portion adjacent to the gate trench portion.
Kaname MITSUZUKA, Tohru SHIRAKAWA
Filed: 20 Dec 22
Utility
Semiconductor Device
27 Jul 23
A semiconductor device includes a cooling base board and an insulated circuit substrate.
Tomoya HIRATA
Filed: 30 Mar 23
Utility
Magnetic Field Apparatus and Linear Motor
27 Jul 23
A magnetic field apparatus includes a main magnet that generates a magnetic field with respect to an armature, a member made of a soft magnetic material and disposed adjacent to an end surface of the main magnet on a side opposing the armature, an auxiliary magnet that increases a magnetic flux of a magnetic pole of the main magnet on the side opposing the armature and disposed adjacent to the main magnet and the member in a relative moving direction between the magnetic field apparatus and the armature, and a restricting part that restricts the magnetic flux of the main magnet passing through an end surface of the member along a third direction that is perpendicular to both a first direction in which the main magnet and the armature oppose each other, and a second direction corresponding to the relative moving direction between the magnetic field apparatus and the armature.
Terukazu AKIYAMA, Satoshi IMAMORI
Filed: 22 Nov 22
Utility
Semiconductor Device
27 Jul 23
A semiconductor device includes a semiconductor chip, a bonding member, and a planar laminated substrate having the semiconductor chip bonded to a front surface thereof via the bonding member.
Seiichi TAKAHASHI, Masayoshi SHIMODA, Makoto ISOZAKI
Filed: 30 Mar 23
Utility
Semiconductor Device and Physical Quantity Sensor Device
27 Jul 23
A semiconductor device, including: a thermistor for temperature detection; a series resistor selection circuit including a series resistor group connected in series with the thermistor, the series resistor selection circuit being configured to select a series resistor from the series resistor group according to a selection signal; an analog/digital (A/D) converter that performs A/D conversion on a divided voltage obtained by dividing an internal power supply voltage between the thermistor and the selected series resistor to generate divided voltage data, and outputs the divided voltage data; and a control circuit.
Hiroyuki NAKAJIMA
Filed: 25 Nov 22
Utility
Gate Voltage Determination Apparatus, Gate Voltage Determination Method, Gate Driving Circuit and Semiconductor Circuit
27 Jul 23
Provided is a gate voltage determination apparatus of a MOS transistor having a gate electrode, a gate insulating film and a channel region, the gate voltage determination apparatus including: a characteristic acquisition unit configured to acquire current-voltage characteristics showing a relationship between a gate current flowing through the gate electrodes and a gate voltage when the gate voltage applied to the gate electrode is changed from a higher voltage side to a lower voltage side; and a voltage determination unit configured to determine, based on a value of the gate voltage at which the gate current shows a peak waveform in the current-voltage characteristics, an off-gate voltage to be applied to the gate electrode when turning off the MOS transistor.
Naoki KUMAGAI
Filed: 17 Nov 22
Utility
Cooler and Semiconductor Device
20 Jul 23
A cooler includes: a cooling wall including a first surface and a second surface; a first path extending in a first direction and having an inlet for a refrigerant; a second path extending in the first direction and having an outlet for the refrigerant; a cooling path causing the first path to communicate with the second path in a second direction intersecting the first direction; a partition spaced from the cooling wall in a third direction perpendicular to the first surface, separating the first and second paths from the cooling paths, and including a third surface constituting a part of a wall surface of the first path, the third surface including a first portion and a second portion differing from the first portion in position in the third direction.
Ginji UCHIBE, Yasutaka SANUKI, Yuji SUZUKI
Filed: 23 Nov 22
Utility
Cooler and Semiconductor Apparatus
20 Jul 23
A cooler includes a main body extending in the Y direction.
Yuji SUZUKI, Yasutaka SANUKI
Filed: 29 Nov 22
Utility
Semiconductor Apparatus
20 Jul 23
A semiconductor apparatus includes: a semiconductor module; a cooler including flow paths through which a refrigerant flows; a casing including a bottom surface; at least one first fixing member fixing the cooler to the bottom surface; and at least one second fixing member fixing the cooler to the bottom surface.
Ginji UCHIBE, Yasutaka SANUKI, Jun NAKAMURA
Filed: 29 Nov 22
Utility
Semiconductor Device
20 Jul 23
An outer frame (outer wall) of a housing of a semiconductor device has a spacer portion that protrudes beyond a bottom surface of a cooling bottom plate in an opposite direction to a semiconductor chip.
Reika UCHIMI
Filed: 29 Nov 22
Utility
Semiconductor Device
20 Jul 23
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface and having a drift region of a first conductivity type; a first main terminal provided above the upper surface; a second main terminal provided below the lower surface; a control terminal configured to control whether or not to cause a current to flow between the first main terminal and the second main terminal; and a buffer region provided between the drift region and the lower surface and having a higher doping concentration than the drift region.
Norihiro KOMIYAMA, Masahiro SASAKI, Yuichi ONOZAWA, Shoji YAMADA
Filed: 22 Mar 23