1128 patents
Page 12 of 57
Utility
Manufacturing Method for Semiconductor Device
16 Mar 23
Provided is a manufacturing method for a semiconductor device including forming a first electrode layer on a front surface of a wafer, implanting, into an outer peripheral region of the front surface of the wafer, a heavy ion of an element in third and subsequent rows of a periodic table, forming an oxide film in the outer peripheral region into which the heavy ion has been implanted, and forming a second electrode layer on the first electrode layer by plating.
Tatsuya HASHIMOTO
Filed: 13 Jul 22
Utility
Semiconductor Element
16 Mar 23
A semiconductor element includes: a first resistive layer; a second resistive layer provided separately from the first resistive layer and having a resistance value different from that of the first resistive layer; a first external connection electrode electrically connected to one end of the first resistive layer; a second external connection electrode provided separately from the first external connection electrode and electrically connected to one end of the second resistive layer; and a passivation film provided to cover the first and second external connection electrodes and having a first opening and a second opening to which top surfaces of the first and second external connection electrodes are partly exposed, wherein the first opening and the second opening having planar patterns with shapes different from each other.
Taichi KARINO
Filed: 27 Jul 22
Utility
Wiring Board and Power Conversion Apparatus
16 Mar 23
A wiring board includes a pair of hard substrates provided for each of a plurality of semiconductor elements connected in parallel; a soft substrate provided so as to be at least partially sandwiched between all of the pairs of hard substrates; a first electrode configured to connect a control terminal of the semiconductor element and the hard substrate or the soft substrate; a second electrode configured to connect a reference potential terminal of the semiconductor element and the hard substrate or the soft substrate; a first wiring configured to connect in parallel the first electrodes of each of the plurality of semiconductor elements, at least part of the first wiring being provided on the soft substrate; and a second wiring configured to connect in parallel the second electrodes of each of the plurality of semiconductor elements, at least part of the second wiring being provided on the soft substrate.
Ryoga KIGUCHI, Hiromu TAKUBO
Filed: 22 Nov 22
Utility
Semiconductor Device and Manufacturing Method
16 Mar 23
Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; an active portion, in which at least one of a transistor portion and a diode portion is provided, in the semiconductor substrate; and an edge termination structure portion provided farther outward than the active portion in the semiconductor substrate, wherein the edge termination structure portion has a plurality of guard rings of a second conductivity type provided in contact with an upper surface of the semiconductor substrate, and an embedded dielectric film arranged between two guard rings and at least partially embedded in the semiconductor substrate, and the guard rings are provided up to a position below the embedded dielectric film.
Kosuke YOSHIDA, Koh Yoshikawa, Nao Suganuma
Filed: 22 Aug 22
Utility
Semiconductor Module
16 Mar 23
A semiconductor module including: a plurality of first semiconductor chips; a resin case provided surrounding an accommodation space for accommodating the plurality of first semiconductor chips; a first gate terminal connected to a gate pad of the plurality of first semiconductor chips; a plurality of first main gate wirings provided in the accommodation space, each of which is connected to the gate pad of the plurality of first semiconductor chips; and a first adjusting gate wiring arranged between at least one of the plurality of first main gate wirings and the first gate terminal, and configured to adjust a difference in wiring lengths between the plurality of first semiconductor chips and the first gate terminal is provided.
Masayoshi NAKAZAWA
Filed: 20 Nov 22
Utility
Insulated Gate Bipolar Transistor
9 Mar 23
An insulated gate bipolar transistor includes: a gate electrode embedded in a gate trench through a gate insulating film, the gate trench penetrating an emitter region and a base region; and a dummy electrode embedded in a dummy trench through a dummy insulating film, the dummy trench penetrating the emitter region and the base region and being disposed on each side of the gate trench and laterally spaced from each side of the gate trench so as to laterally face the gate trench through the base region, wherein the dummy electrode includes a bottom dummy conductive member disposed at a bottom of the dummy trench such that an upper surface of the bottom dummy conductive member is located lower than a lower surface of the base region, the bottom dummy conductive member being configured to be electrically connected to a gate potential.
Yoshihiro IKURA
Filed: 1 Aug 22
Utility
Semiconductor Device
9 Mar 23
A semiconductor device for driving an inductive load.
Morio IWAMIZU
Filed: 27 Jul 22
Utility
Semiconductor Apparatus and Semiconductor Apparatus Manufacturing Method
9 Mar 23
A semiconductor apparatus includes a semiconductor element, a control terminal electrically connected to a top electrode of the semiconductor element through a wiring member, and a case member in which at least a portion of the control terminal is embedded and which defines a space for housing the semiconductor element.
Nobuhiro HIGASHI, Daiki YOSHIDA, Yuma MURATA, Naoyuki KANAI
Filed: 28 Jul 22
Utility
Manufacturing Method and Inspection Method of Semiconductor Device
9 Mar 23
Provided is a manufacturing method of a semiconductor device having a semiconductor substrate.
Masayuki MIYAZAKI, Taketo TSUJI, Makoto TERAKAWA, Kensuke HATA, Tomohiro MIMURA
Filed: 16 Aug 22
Utility
Semiconductor Module
9 Mar 23
A semiconductor module includes: an insulation layer; a semiconductor element that includes a main electrode and is mounted on the insulation layer; a wiring member that is electrically connected to the main electrode of the semiconductor element; a first resin that encases the semiconductor element and the wiring member; and a second resin that covers a part of the wiring member.
Kousuke KOMATSU
Filed: 28 Jul 22
Utility
Semiconductor Device
9 Mar 23
Provided is a semiconductor device including a semiconductor substrate having a transistor portion and a diode portion; and an emitter electrode and a gate electrode provided above a front surface of the semiconductor substrate, wherein the transistor portion has a plurality of trench portions electrically connected to the gate electrode, a drift region of a first conductivity type provided in the semiconductor substrate, a base region of a second conductivity type provided above the drift region, and a trench bottom barrier region of a second conductivity type provided between the drift region and the base region and having a higher doping concentration than that of the base region, and the trench bottom barrier region is electrically connected to the emitter electrode.
Toshiyuki MATSUI, Kazuki KAMIMURA
Filed: 16 Nov 22
Utility
Switching Control Circuit and Power Supply Circuit
9 Mar 23
A switching control circuit for a power supply circuit, including: a first command value output circuit outputting a first command value; a correction circuit correcting the first command value, to output a second command value; a first timer circuit measuring a first time period starting from a first timing at which a transistor of the power supply circuit is turned on; and a driving signal output circuit outputting a driving signal to turn on the transistor in response to an inductor current of the power supply circuit reaching a predetermined value and the first time period having elapsed since the first timing, and outputting the driving signal to turn off the transistor based on the second command value.
Ryuji YAMADA, Ryuunosuke ARAUMI
Filed: 29 Jul 22
Utility
Silicon Carbide Semiconductor Device
2 Mar 23
In an intermediate region surrounding a periphery of an active region, a gate polysilicon wiring layer is provided on a gate insulating film at a front surface of a semiconductor substrate, via a field oxide film.
Keishirou KUMADA
Filed: 30 Jun 22
Utility
Semiconductor Module
2 Mar 23
A semiconductor module including first and second transistors coupled in parallel to a first line receiving a power supply voltage, a driver circuit configured to apply, to a second line, a first voltage to turn on the first and second transistors in response to an input signal, a first resistor having two ends respectively coupled to the second line and a control electrode of the second transistor, a second resistor having two end respectively coupled to one of the two ends of the first resistor and a control electrode of the first transistor, a third resistor coupled to the second transistor, a third transistor coupled to one of the two ends of the second resistor, and a terminal coupled to the first to third transistors, the third resistor, and a load, such that the load receives a current from the first transistor.
Shigemi MIYAZAWA
Filed: 22 Jun 22
Utility
Test Method
2 Mar 23
Provided is a test method of a semiconductor apparatus comprising: first testing the semiconductor apparatus by bringing one or more probe pins into contact with a pad of the semiconductor apparatus; and second testing the semiconductor apparatus in a state where contact positions of the one or more probe pins with respect to the pad are different from those of the first testing.
Kenichi ISHII
Filed: 13 Jul 22
Utility
Semiconductor Apparatus and Manufacturing Method for Semiconductor Apparatus
2 Mar 23
A semiconductor apparatus includes: (i) a semiconductor device; (ii) a first external connection terminal configured to be connected to the semiconductor device, and includes a first surface; and a second surface; and (iii) an insulating resin enclosure.
Daiki YOSHIDA, Nobuhiro HIGASHI
Filed: 28 Jun 22
Utility
Semiconductor Module
2 Mar 23
Provided is a semiconductor module having a P-side arm circuit and an N-side arm circuit.
Tamiko ASANO, Michio TAMATE
Filed: 20 Jun 22
Utility
Semiconductor Device
2 Mar 23
A semiconductor device includes a semiconductor chip, an insulated circuit board on which the semiconductor chip is disposed, a cooling plate having a second front surface to which the insulated circuit board is disposed, a bonding member which bonding the insulated circuit board to the cooling plate, a case which surrounds the semiconductor chip and the insulated circuit board and is bonded to the second front surface of the cooling plate with an adhesive therebetween and a sealing member which seals the semiconductor chip and the insulated circuit board over the cooling plate in the case.
Takafumi YAMADA
Filed: 24 Jun 22
Utility
Test Method
2 Mar 23
Provided is a test method of a semiconductor device under test, the test method comprising: controlling the semiconductor device under test to an on state by inputting a control signal to the semiconductor device under test; and observing the semiconductor device under test at a time of controlling the semiconductor device under test in the on state to an off state and evaluating the semiconductor device under test, wherein the semiconductor device under test includes one semiconductor device under test or a plurality of semiconductor devices under test, and in the controlling to the on state, a length of an on-time for which the one semiconductor device under test or the plurality of semiconductor devices under test are set to the on state is adjusted based on a magnitude of a variation in a delay time of the control signal.
Kenichi ISHII, Atsushi YOSHIDA, Tomonori MORI, Takashi SHIIGI
Filed: 13 Jul 22
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
2 Mar 23
A semiconductor device includes an insulated substrate, a semiconductor element mounted on a first main surface side of the insulated substrate, and a case housing that houses the insulated substrate and the semiconductor element so that a second main surface side of the insulated substrate is exposed.
Akira MOROZUMI
Filed: 28 Jun 22