1128 patents
Page 5 of 57
Utility
Integrated Circuit and Power Supply Circuit
19 Oct 23
An integrated circuit for a power supply circuit that generates an output voltage from an alternating current (AC) voltage, the power supply circuit including a transistor configured to control a current flowing through an inductor.
Takato SUGAWARA
Filed: 24 Feb 23
Utility
Semiconductor Device and Manufacturing Method
19 Oct 23
A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction.
Yoshiharu KATO, Toru AJIKI, Tohru SHIRAKAWA, Misaki TAKAHASHI, Kaname MITSUZUKA, Takashi YOSHIMURA, Yuichi ONOZAWA, Hiroshi TAKISHITA, Soichi YOSHIDA
Filed: 13 Jun 23
Utility
Semiconductor Device, Ips Having Temperature Dependency Correction Function, and Inverter Device
19 Oct 23
A semiconductor device, including: a semiconductor element configured to generate an output current that varies with a change in a temperature of the semiconductor element; a temperature detection circuit that detects the temperature and outputs a temperature detection signal based on the detected temperature; and a correction circuit that causes the output current of the semiconductor element to change based on the temperature detection signal.
Daisuke ISOBE
Filed: 30 Mar 23
Utility
Semiconductor Device
19 Oct 23
A semiconductor device includes: a plurality of trench portions provided in a semiconductor substrate; a mesa portion provided between the plurality of trench portions in the semiconductor substrate; and a front surface metal layer provided above the semiconductor substrate, wherein each of the plurality of trench portions has: a gate trench portion including a gate conductive portion and a gate dielectric film; and a dummy trench portion including a dummy conductive portion and a dummy dielectric film, and the front surface metal layer has: an upper region in contact with an upper surface of the mesa portion in direct contact with the dummy trench portion; and an embedded region that is embedded in the semiconductor substrate and is in contact with a side wall of the mesa portion and the dummy conductive portion.
Naoki MITAMURA
Filed: 22 Feb 23
Utility
Control Device, and Switching Device
19 Oct 23
A control apparatus is provided, comprising a protecting unit configured to perform, in response to short circuit occurring in a main switching device, protection operation to restrict current flowing through the main switching device, and a protection operation control unit configured to cause the protecting unit to continue the protection operation until power supply to a driving control unit for performing drive control of the main switching device according to a drive signal stops, wherein the protection operation control unit has a first retaining unit configured to retain information indicating that the protection operation is to be performed until a first cancellation condition is satisfied including that the short circuit has been eliminated and that the power supply has stopped, when the short circuit has occurred.
Naoki SHIMIZU
Filed: 19 Jun 23
Utility
Semiconductor Module and Method for Manufacturing the Same
12 Oct 23
A semiconductor module includes: a semiconductor chip including a main electrode; a connection conductor electrically connected to the main electrode; a housing portion surrounding the semiconductor chip and at least a part of the connection conductor; a sealing material filled in a space surrounded by the housing portion; and a connection unit fixed to the housing portion.
Tadahiko SATO
Filed: 25 May 23
Utility
Nitride Semiconductor Device and Method for Manufacturing Nitride Semiconductor Device
12 Oct 23
An impurity region of P-type that the field effect transistor of the nitride semiconductor device includes has a peak position at which concentration of P-type impurities reaches a maximum at a position located away from an interface with a gate insulating film.
Ryo TANAKA, Shinya TAKASHIMA, Katsunori UENO
Filed: 22 Feb 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
12 Oct 23
A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type1, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate insulating films, gate electrodes, a first electrode, and a second electrode.
Keishirou KUMADA
Filed: 28 Feb 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
12 Oct 23
In an active region, a first parallel pn layer in which first first-conductivity-type regions and first second-conductivity-type regions are disposed to repeatedly alternate with one another is provided while in a termination region, a second parallel pn layer in which second first-conductivity-type regions and second second-conductivity-type regions are disposed to repeatedly alternate with one another, a first semiconductor region of the second conductivity type and configuring a voltage withstanding structure, and a second semiconductor region of the second conductivity type are provided.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Silicon Carbide Semiconductor Device
12 Oct 23
A silicon carbide semiconductor device includes a parallel pn layer that includes a standard portion and first and second portions.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Driving Apparatus and Driving Method
12 Oct 23
Provided is a driving apparatus including a temperature detection circuit configured to output a temperature detection signal corresponding to a temperature of a switching device, a current detection circuit configured to sample, at a timing during an ON period of the switching device, a current detection signal corresponding to a current that flows in the switching device, and a driving circuit configured to adjust, according to the temperature detection signal and the current detection signal, a driving current to be supplied to a control terminal of the switching device.
Masashi AKAHANE
Filed: 21 Feb 23
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
5 Oct 23
In an active region, a first parallel pn layer is provided in which a plurality of first first-conductivity-type regions and a plurality of first second-conductivity-type regions are disposed so as to repeatedly alternate with one another; in a termination region, a second parallel pn layer is provided in which a plurality of second first-conductivity-type regions and a plurality of second second-conductivity-type regions are disposed so as to repeatedly alternate one another; in the termination region, a first semiconductor region of a second conductivity type, is selectively provided between a first main surface of a semiconductor substrate and the second parallel pn layer, the first semiconductor region configuring a voltage withstanding structure and surrounding a periphery of the active region.
Masakazu BABA, Shinsuke HARADA
Filed: 28 Feb 23
Utility
Semiconductor Device and Semiconductor Module
5 Oct 23
A semiconductor device, including: a front-surface-side metal layer provided above a semiconductor substrate; a plated layer provided on an upper surface of the front-surface-side metal layer; a barrier layer which is provided on the upper surface of the front-surface-side metal layer, and provided being in direct contact with the plated layer on the upper surface of the front-surface-side metal layer; and an insulation protecting layer provided on the barrier layer, is provided.
Masahide GOTOH
Filed: 22 Feb 23
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
5 Oct 23
Provided is a semiconductor device including a MOS gate structure provided in a semiconductor substrate, including: an interlayer dielectric film which includes a contact hole and is provided above the semiconductor substrate; a conductive first barrier metal layer provided on side walls of the interlayer dielectric film in the contact hole; a conductive second barrier metal layer stacked on the first barrier metal layer in the contact hole; and a silicide layer provided on an upper surface of the semiconductor substrate below the contact hole, in which the first barrier metal layer is more dense than the second barrier metal layer, and a film thickness thereof is 1 nm or more and 10 nm or less.
Takashi YOSHIMURA, Makoto SHIMOSAWA, Motoyoshi KUBOUCHI, Misaki UCHIDA
Filed: 22 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Same
28 Sep 23
A method of manufacturing a semiconductor device, includes; preparing an insulated circuit substrate including a circuit layer having a main surface and a side surface inclined to a normal direction of the main surface; irradiating the side surface of the circuit layer with a laser beam so as to roughen at least a part of the side surface of the circuit layer and provide an oxide film on the roughened side surface of the circuit layer; and bonding a semiconductor chip to the main surface of the circuit layer via a solder layer.
Yasuaki HOZUMI, Fumihiko MOMOSE, Natsuki TAKEISHI, Ryoto UCHIYAMA
Filed: 27 Jan 23
Utility
Semiconductor Apparatus
28 Sep 23
A first conductive pattern includes a first input region overlapping a first semiconductor device and a second input region overlapping a second semiconductor device.
Akio YAMANO
Filed: 30 May 23
Utility
Manufucturing Method of Packaging Structure for Bipolar Transistor with Constricted Bumps
28 Sep 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate.
Ryoichi KATO, Yoshinari IKEDA, Tatsuo NISHIZAWA, Eiji MOCHIZUKI
Filed: 18 May 23
Utility
Semiconductor Device
28 Sep 23
Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.
Yuichi HARADA
Filed: 11 Apr 23
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
28 Sep 23
Provided is a semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a buffer region of the first conductivity type which is provided in a back surface side of the semiconductor substrate relative to the drift region and which includes a first peak of a doping concentration and a second peak of the doping concentration which is provided in a front surface side of the semiconductor substrate relative to the first peak, and a first lifetime control region provided between the first peak and the second peak in a depth direction of the semiconductor substrate.
Noriaki YAO, Yoshihisa SUZUKI, Hiroshi TAKISHITA
Filed: 21 May 23
Utility
Drive Circuit of Switching Element and Intelligent Power Module
21 Sep 23
There is provided a drive circuit of a switching element and an intelligent power module both capable of preventing deterioration of a switching loss of the switching element.
Masanari FUJII
Filed: 27 Jan 23