1128 patents
Page 17 of 57
Utility
Pressure Sensor Apparatus
17 Nov 22
Provided is a pressure sensor apparatus, including: a pressure sensor unit; a case configured to house the pressure sensor unit; and a plurality of lead terminals configured to be exposed toward outside of of the case, wherein the plurality of lead terminals include a first terminal, a second terminal, and a ground terminal; and the ground terminal, the first terminal and the second terminal are arranged in an order of the ground terminal, the first terminal, and the second terminal outside the case.
Hiroto KIKUCHI, Kazuhiro MATSUNAMI, Kimihiro ASHINO
Filed: 26 Apr 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device
17 Nov 22
A method of manufacturing a silicon carbide semiconductor device.
Hidetatsu NAKAMURA, Keiji OKUMURA, Yoshikuni FUJIMOTO
Filed: 25 Mar 22
Utility
Semiconductor Device
17 Nov 22
A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance.
Makoto ISOZAKI
Filed: 28 Jul 22
Utility
Silicon Carbide Semiconductor Device
17 Nov 22
A silicon carbide semiconductor device including a silicon carbide semiconductor substrate.
Hiroyuki FUJISAWA, Akimasa KINOSHITA
Filed: 29 Mar 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
17 Nov 22
A type, size, and location of a crystal defect of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected from a PL image by crystal defect inspection equipment.
Yohei KAGOYAMA
Filed: 29 Mar 22
Utility
Power Supply Circuit and Switching Control Circuit
17 Nov 22
A power supply circuit configured to generate an output voltage at a target level from an input voltage thereof.
Masashi AKAHANE
Filed: 28 Jul 22
Utility
Integrated Circuit
17 Nov 22
An integrated circuit for controlling an ignition system including a coil.
Hiroshi NAKAMURA, Hiroyuki NAKAJIMA, Takanori KOHAMA, Yuya ABE
Filed: 21 Apr 22
Utility
Corrosion Monitoring Device
10 Nov 22
Provided is a corrosive environment monitoring device capable of monitoring the condition of a turbine for a long period of time without corrosion damage to a sensor caused by turbine steam.
Yohsuke ABE, Sakae IZUMI, Yoshihiro SAKAI
Filed: 26 Jul 22
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
3 Nov 22
A semiconductor device has transistor portions and diode portions.
Kazuki KAMIMURA, Motoyoshi KUBOUCHI
Filed: 11 Jul 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
3 Nov 22
Provided is a semiconductor device including a drift region, a base region, two trench portions and a mesa portion, wherein at least one of the two trench portions is a gate trench portion, the mesa portion includes: a first conductivity type emitter region provided to be exposed on an upper surface of the mesa portion; a second conductivity type contact region provided to be exposed on the upper surface of the mesa portion alternately with the emitter region in an extending direction; and a second conductivity type connecting region with a higher doping concentration than the base region, wherein the connecting region is provided to overlap with the emitter region in a top view, is arranged apart from the gate trench portion, is arranged below the upper surface of the mesa portion, and connects two of the contact regions sandwiching the emitter region in the extending direction.
Yuki KARAMOTO
Filed: 15 Jul 22
Utility
Semiconductor Device
3 Nov 22
A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.
Masahiro TAOKA
Filed: 19 Jul 22
Utility
Semiconductor Apparatus and Method of Manufacturing Semiconductor Apparatus
27 Oct 22
A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.
Naoki SAEGUSA
Filed: 25 Feb 22
Utility
Manufacturing Method of Semiconductor Apparatus
27 Oct 22
Provided is a manufacturing method of semiconductor apparatus comprising a semiconductor substrate, the method comprising: grinding a first surface of the semiconductor substrate to form an outer peripheral surplus region on an outer periphery of the semiconductor substrate; and spin etching the first surface of the semiconductor substrate by a chemical liquid, and wherein after the grinding, in a region of the semiconductor substrate which is closer to an inner side than the outer peripheral surplus region, a thickness of the semiconductor substrate in an end portion of the region is greater than a thickness of the semiconductor substrate in a center portion of the region.
Michiya KITANO
Filed: 23 Feb 22
Utility
Semiconductor Device
27 Oct 22
A FLR structure is provided in an edge termination region as a voltage withstanding structure.
Yasuyuki HOSHI, Tomohiro MORIYA
Filed: 28 Feb 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
27 Oct 22
In an edge termination region, a FLR structure configured by FLRs having a floating potential and surrounding concentrically a periphery of an active region is provided.
Akimasa KINOSHITA
Filed: 28 Feb 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device
20 Oct 22
Types, sizes, and locations of crystal defects of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected.
Hidetatsu NAKAMURA
Filed: 25 Feb 22
Utility
Analyzing Apparatus, Analysis Method, and Computer-readable Medium
20 Oct 22
Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.
Norihiro KOMIYAMA, Masahiro SASAKI, Yuichi ONOZAWA, Shoji YAMADA
Filed: 22 Mar 22
Utility
Semiconductor Module
20 Oct 22
A semiconductor module includes a laminated substrate including an insulating board and a plurality of circuit boards that are arranged on an upper face of the insulating board, the plurality of circuit boards including first and second circuit boards, a semiconductor element disposed on the first circuit board and including, on an upper face of the semiconductor element, a main electrode, a gate pad, and a gate runner electrically connected to the gate pad, and a first wiring member electrically connecting the main electrode to the second circuit board.
Akio YAMANO
Filed: 30 Jun 22
Utility
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
20 Oct 22
A silicon carbide semiconductor device includes an n-type drift layer disposed on an n-type silicon carbide substrate; an n-type current spreading layer disposed on a top surface of the drift layer, having a higher impurity concentration than the drift layer; a p-type base region disposed on a top surface of the current spreading layer; a p-type gate-bottom protection region located in the current spreading layer; a p-type base-bottom embedded region located in the current spreading layer, separated from the gate-bottom protection region to be in contact with a bottom surface of the base region; an insulated-gate electrode structure disposed in a trench penetrating the base region to reach the gate-bottom protection region, and a lower recombination region disposed in a lower portion of the drift layer, including crystal defects configured to recombine minority carriers injected into the drift layer.
Keishirou KUMADA
Filed: 24 Feb 22
Utility
Semiconductor Device and Method of Manufacturing the Same
13 Oct 22
A semiconductor device includes a semiconductor chip, an insulated circuit substrate including an insulating board and a circuit pattern on the insulating board electrically connected to the semiconductor chip, and a wiring member having a leg portion bonded to the circuit pattern.
Taichi ITOH
Filed: 30 Jun 22