1128 patents
Page 20 of 57
Utility
Semiconductor Device and Method of Manufacturing the Same
8 Sep 22
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Kazumi TAKAGIWA, Hitoshi SUMIDA
Filed: 31 Jan 22
Utility
Armature, Linear Motor, Method of Manufacturing Armature
8 Sep 22
An armature includes a plurality of cores arranged in a straight line and discontinuous with each other, a plurality of coils wound around each of the cores, and a holding section configured to hold the cores.
Satoshi IMAMORI, Terukazu AKIYAMA
Filed: 24 Jan 22
Utility
ajbjlojw1pltkh98qgk6aiojr5bixm zk2t8rczvgh1
1 Sep 22
A semiconductor device includes a semiconductor chip, an insulated circuit board including a metal plate, an insulating plate and a circuit pattern, each of which has a rectangular shape, and a spacer part disposed on the periphery of a rear surface of the metal plate including at least one of the four corners thereof.
Yushi SATO, Yuichiro HINATA, Naoyuki KANAI
Filed: 27 Jan 22
Utility
09kc02gen8rftbfmvo4gdd7kd5mpirqbip81nh
1 Sep 22
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
Yasunori AGATA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki MEGURO, Naoko KODAMA, Yoshihiro IKURA, Seiji NOGUCHI, Yuichi HARADA, Yosuke SAKURAI
Filed: 18 May 22
Utility
n9n49x41o4qpq27f3e91vzjgkciba7c733jr1
1 Sep 22
A cooling apparatus for a semiconductor module including a semiconductor chip includes a top plate having a lower surface a bottom plate disposed to have a refrigerant circulation portion between the bottom plate and the lower surface of the top plate and a side wall configured to surround the refrigerant circulation portion.
Yuta TAMAI, Takahiro KOYAMA
Filed: 18 May 22
Utility
bifudswkpiifjcylksce8rqyr84vt0u
1 Sep 22
Provided is a semiconductor module including: an insulating circuit board having a circuit pattern formed in one surface; a semiconductor chip placed in the insulating circuit board; and a wiring portion for electrically connecting the semiconductor chip and the circuit pattern.
Mai SAITO, Akihiko IWAYA, Yoko NAKAMURA, Tatsuhiko ASAI, Hiromichi GOHARA, Tsubasa WATAKABE, Narumi SATO
Filed: 17 May 22
Utility
sg3r1ikgd8hyx1of6ocmhxjf33savr1vqx6fop72lol5i2
1 Sep 22
Provided is a semiconductor device including a semiconductor substrate including a transistor portion and a diode portion.
Kouta YOKOYAMA, Toru AJIKI, Tohru SHIRAKAWA
Filed: 18 May 22
Utility
wynyp1r798z5q7irpjxt7
1 Sep 22
A semiconductor device is provided, including: a semiconductor substrate; a first-conductivity-type drift region provided in the semiconductor substrate; a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction; a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion; and a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction.
Tatsuya NAITO
Filed: 15 May 22
Utility
v2u8xm4vsgy7y799y7x10z1r77j2mh4xt cs93c0
1 Sep 22
A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, a lower gradient portion in which the concentration decreases from the maximum portion to a drift region, and a kink portion at which a differential value of the doping concentration distribution exhibits an extreme value in a region except a region in which the differential value exhibits a maximum value or a minimum value.
Tatsuya NAITO
Filed: 17 May 22
Utility
cbntdjd8gt8epa8ly0frv4krqtg7l24ejq8
25 Aug 22
A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch.
Kunio MATSUBARA, Ryoga KIGUCHI
Filed: 29 Dec 21
Utility
gcg7h4vithszy7tdtstp0j6b
25 Aug 22
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion.
Kaname MITSUZUKA, Misaki TAKAHASHI, Tohru SHIRAKAWA
Filed: 10 May 22
Utility
cwn11s3y6yy98w itd0w3au4rwqf2w2qe1h9t3pg
18 Aug 22
A semiconductor device includes a terminal portion including a second external terminal, an insulating sheet disposed on the second external terminal, and a first external terminal disposed on the insulating sheet.
Akito NAKAGOME, Ryoichi KATO, Yoshinari IKEDA
Filed: 29 Dec 21
Utility
7w9c4eds0vm6u63ts7moitdjcv6cyp9gci58914rwqphj5m8w9i6
18 Aug 22
Provided is a semiconductor device including: a semiconductor substrate having a substrate upper surface; and an embedded oxide film provided in the substrate upper surface and at least partially embedded below the substrate upper surface.
Yutaka UCHIDA
Filed: 26 Dec 21
Utility
i0n3un5hwqcv3k e56jlcfqot2p27s7
18 Aug 22
A silicon carbide semiconductor device, including a semiconductor substrate containing silicon carbide, a bonding wire, and a surface electrode of an aluminum alloy containing silicon, the surface electrode being provided on a surface of the semiconductor substrate, and having a joint portion to which the bonding wire is bonded.
Naoyuki OHSE, Makoto UTSUMI
Filed: 30 Dec 21
Utility
igz2s13r9twwh68i9xcimlu7wyecbjfaokl rl4darsn
18 Aug 22
A sensor device for measuring a physical quantity.
Kimihiro ASHINO
Filed: 29 Dec 21
Utility
0x2uka500fse12ythjfwmundlyldhq2ub0aghyl8z7cmyynd2uj3ycx
18 Aug 22
Provided are an electrophotographic photoconductor that is less likely to cause transfer ghosting even when mounted in an electrophotographic apparatus with high transfer voltage set for high-speed or cleanerless processes, as well as a method of manufacturing the electrophotographic photoconductor, and an electrophotographic apparatus.
Fengqiang ZHU, Shinjiro SUZUKI, Masaru TAKEUCHI, Kazuki NEBASHI
Filed: 3 Jan 22
Utility
d5bx9l6chty7j6t9httgsdhia
11 Aug 22
Provided is a semiconductor device, wherein a straight line extending from an end portion E1 in the extending direction of a contact hole for electrically connecting an emitter electrode and a front surface of a semiconductor substrate toward a back surface of the semiconductor substrate is defined as a first perpendicular line, a straight line forming a predetermined angle θ1 with respect to the first perpendicular line and passing through the end portion E1 in the extending direction of the contact hole is defined as a first straight line, a position where the first straight line intersects a back surface of the semiconductor substrate is defined as a position M1, and the position M1 is located on an outer side of a cathode region in the extending direction.
Soichi YOSHIDA
Filed: 25 Apr 22
Utility
7gi5xv63iwrd306 54mlj69bstbdkgguuutgc9ryfkodrm8q5htxqwc4h0gy
11 Aug 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first electrode, and a second electrode.
Shingo HAYASHI
Filed: 29 Dec 21
Utility
lgejju3qa4jqukdgffmpi5we269
11 Aug 22
Back-surface roughness of a back surface of a silicon carbide semiconductor device having a MOS gate structure in a first region that is a region within 30 μm of a cross section (lateral surface) of the device is at most 4 μm while the back-surface roughness in a second region other than the first region is at most 2 μm, the back surface of the silicon carbide semiconductor device is the back surface of the second electrode.
Masaki MIYAZATO, Makoto UTSUMI
Filed: 30 Dec 21
Utility
rqr1sgfvmkukyblso1wyzmiv37ly1788dlpupd8opsvsxu3ncdp4 qtm8ltb
11 Aug 22
A silicon carbide semiconductor device being capable of operating at least 100 degree C., includes a semiconductor substrate having an active region, the semiconductor substrate having first and second surfaces opposite to each other, a first semiconductor region of an n type, provided in the semiconductor substrate, a second semiconductor region of a p type, provided in the active region, between the first surface of the semiconductor substrate and the first semiconductor region, and a device element structure including a pn junction between the second and first semiconductor regions that forms a body diode through which a current flows when the semiconductor device is turned on.
Yohei KAGOYAMA, Masaki MIYAZATO
Filed: 4 Jan 22