1128 patents
Page 22 of 57
Utility
Semiconductor Device
23 Jun 22
One object is to provide a semiconductor device capable of suppressing forward voltage degradation and loss during turn-on.
Masakazu BABA, Shinsuke HARADA
Filed: 21 Dec 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
23 Jun 22
A voltage withstanding structure disposed in an edge termination region is a spatial modulation junction termination extension (JTE) structure formed by a combination of a JTE structure and a field limiting ring (FLR) structure.
Akimasa Kinoshita
Filed: 1 Nov 21
Utility
Switching Control Circuit and Power Factor Correction Circuit
23 Jun 22
A switching control circuit for a power supply circuit that generates an output voltage from an AC voltage.
Ryuji YAMADA, Ryuunosuke ARAUMI
Filed: 28 Oct 21
Utility
Module
16 Jun 22
An electric circuit in which a first switching element and a first diode element are connected in antiparallel to form an upper arm and a second semiconductor element and a second diode element are connected in antiparallel to form a lower arm, and the upper arm and the lower arm are connected in series.
Hideo AMI
Filed: 28 Feb 22
Utility
Semiconductor Device
16 Jun 22
A semiconductor device includes: a well region of a second conductivity-type deposited on a surface layer of a semiconductor layer of a first conductivity-type; a breakdown voltage region of the second conductivity-type arranged to surround the well region and having a lower impurity concentration than the well region; a base region of the first conductivity-type arranged to surround the breakdown voltage region; a carrier supply region of the second conductivity-type arranged on a surface layer of the base region and serving as a level shifter; and a carrier reception region of the level shifter, wherein the carrier reception region is formed of a first universal contact region including a region of the first conductivity-type and a region of the second conductivity-type arranged in contact with each other.
Masaharu YAMAJI
Filed: 27 Oct 21
Utility
Semiconductor Device
16 Jun 22
There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.
Kosuke YOSHIDA
Filed: 1 Mar 22
Utility
Vertical Mosfet Having Trench Gate Structure Containing Silicon Carbide
16 Jun 22
A vertical metal oxide semiconductor field effect transistor, including a starting substrate of a first conductivity type, a second first-conductivity-type epitaxial layer provided on a first surface of the starting substrate via a first first-conductivity-type epitaxial layer, a first semiconductor region of the first conductivity type provided as a portion of the second first-conductivity-type epitaxial layer, a second-conductivity-type epitaxial layer forming a pn junction interface with the second first-conductivity-type epitaxial layer and supplying a minority carrier to the second first-conductivity-type epitaxial layer, a plurality of second semiconductor regions of the first conductivity type selectively provided in the second-conductivity-type epitaxial layer, a plurality of trenches penetrating through the second semiconductor regions and the second-conductivity-type epitaxial layer, and a plurality of gate electrodes provided in the trenches via gate insulating films.
Takeshi TAWARA, Hidekazu TSUCHIDA, Koichi MURATA
Filed: 29 Oct 21
Utility
Semiconductor Device
16 Jun 22
A semiconductor device includes: a semiconductor base body of a first conductivity-type; a first electrode electrically connected to the semiconductor base body; a first semiconductor region of a second conductivity-type provided at an upper part of the semiconductor base body; a second semiconductor region of the first conductivity-type provided at an upper part of the first semiconductor region; a second electrode electrically connected to the first semiconductor region; an insulating film provided on a top surface of the second semiconductor region; and a passive element provided on a top surface of the insulating film.
Yoshiaki TOYODA
Filed: 25 Oct 21
Utility
Short-circuit Detector and Power Converter
16 Jun 22
A short-circuit detector includes: a first Rogowski coil configured to generate a first detection signal in accordance with a current that flows through a first arm due to a short circuit in a load; a second Rogowski coil configured to generate a second detection signal in accordance with a current that flows through the first arm due to a short circuit in the first arm or a second arm; a load short-circuit detection circuit configured to detect the short circuit in the load, based on the first detection signal; an arm short-circuit detection circuit configured to detect the short circuit in the first arm or the second arm, based on the second detection signal; and a short-circuit detection circuit configured to detect a short-circuit, based on: an output signal output from the load short-circuit detection circuit; and an output signal output from the arm short-circuit detection circuit.
Natsuko TAKEUCHI, Kunio MATSUBARA, Hiromu TAKUBO
Filed: 25 Feb 22
Utility
Driving Apparatus, Semiconductor Apparatus, and Driving Method
16 Jun 22
A driving apparatus includes: a driving section configured to drive a control terminal of a semiconductor device according to a control signal input from an outside, the semiconductor device including a first main terminal, a second main terminal, and the control terminal that is configured to control a connection state between the first main terminal and the second main terminal that are connected in parallel with a snubber; and a drive control section configured to lower a drive capability of the driving section during a period in which an inter-main-terminal voltage between the first main terminal and the second main terminal changes by a predetermined reference voltage difference owing to switching of the semiconductor device, compared with other at least some periods.
Seiki IGARASHI
Filed: 26 Oct 21
Utility
Method for Producing Steam Turbine Member
9 Jun 22
The present invention provides a method for producing a steam turbine member that is highly superior in smoothness.
Yuya NAKASHIMA, Morio CHIWATA, Susumu ISHIMURA, Yuta FUKUDA
Filed: 1 Mar 22
Utility
Short Circuit Determination Apparatus, Switch Apparatus, and Short Circuit Determination Method
9 Jun 22
There is provided a short circuit determination apparatus including: a sensor configured to detect, in a switching device that has a control terminal, a first main terminal, and a second main terminal, a temporal change of a main current flowing between the first main terminal and the second main terminal; and a short circuit determination unit configured to determine that the switching device is short-circuited, in a case where the temporal change of the main current is larger than or equal to a first threshold value, after a first timing after a control signal for driving the control terminal is turned on.
Kunio MATSUBARA, Ryoga KIGUCHI
Filed: 23 Feb 22
Utility
Semiconductor Module
9 Jun 22
A semiconductor module includes a cooling device that includes: a ceiling plate; a side wall; a bottom plate; a plurality of pin fins having a polygonal shape and arranged in a matrix form in which one end of the respective pin fins is connected to a fin region having a rectangular shape; an inlet for a coolant at a first position adjacent to a part of one of long sides of the fin region, and an outlet for the coolant at a second position adjacent to a part of the other long side of the fin region.
Yoshihiro TATEISHI, Tatsuhiko ASAI, Takahiro KOYAMA, Hiromichi GOHARA
Filed: 24 Feb 22
Utility
Semiconductor Module
9 Jun 22
Provided is a semiconductor module comprising a semiconductor chip, a lead frame including a chip connection portion configured to connect the lead frame to the semiconductor chip, and a bonding member configured to connect the chip connection portion and the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate, an active portion provided on the semiconductor substrate, and a transverse protective film provided above the active portion and provided to traverse the active portion in a top view, wherein the chip connection portion includes a center portion which covers a center of the transverse protective film in a top view and a first cut-out portion provided from a first end side of the chip connection portion towards the center portion.
Yoshiaki Takahashi
Filed: 25 Oct 21
Utility
Power Converter
9 Jun 22
A power converter includes a housing including a convex radiator that radiates heat from a heater element and protrudes toward a board, in which the board and the heater element are arranged, and an urging member that is arranged between the board and a bottom surface of the housing and urges the heater element toward a first side surface of the convex radiator of the housing.
Shun FUKUCHI
Filed: 22 Feb 22
Utility
Semiconductor Device, Manufacturing Method of Semiconductor Device, and Power Conversion Device Comprising Semiconductor Device
9 Jun 22
Provided is a semiconductor device comprising: a semiconductor substrate provided with a drift region; a buffer region arranged between the drift region and the lower surface, wherein a doping concentration distribution has three or more concentration peaks; and a collector region arranged between the buffer region and the lower surface, wherein the three or more concentration peaks in the buffer region include: a first concentration peak closest to the lower surface; a second concentration peak closest, next to the first concentration peak, to the lower surface, arranged 5 μm or more distant from the lower surface in the depth direction, and having a doping concentration lower than the first concentration peak, the doping concentration being less than 1.0×1015/cm3; and a high concentration peak arranged farther from the lower surface than the second concentration peak, and having a higher doping concentration than the second concentration peak.
Yoshiharu KATO, Yosuke SAKURAI, Seiji NOGUCHI, Takashi YOSHIMURA
Filed: 23 Feb 22
Utility
Power Converter
9 Jun 22
A power converter includes a capacitor and a substrate on which a plurality of switching elements for power conversion are mounted.
Yuji SUZUKI, Motohito HORI, Akio TOBA, Ikuya SATO, Yasuhito TANAKA, Masamichi IWASAKI, Masaaki AJIMA, Nobuaki OHGURI
Filed: 23 Feb 22
Utility
Power Converter
9 Jun 22
A power converter includes a positive busbar electrically connected to a positive terminal and the first capacitor electrode, and includes a negative busbar electrically connected to a negative terminal and the second capacitor electrode.
Yuji SUZUKI, Motohito HORI, Akio TOBA, Ikuya SATO, Yasuhito TANAKA, Masamichi IWASAKI, Masaaki AJIMA, Nobuaki OHGURI
Filed: 23 Feb 22
Utility
Cooler and Semiconductor Apparatus
2 Jun 22
A cooler includes a top plate, one surface of which serves as a heat dissipation surface, a bottom plate disposed so as to face the top plate and having a larger thickness than that of the top plate, a plurality of fins provided between the top plate and the bottom plate, and a circumferential wall part provided so as to surround the plurality of fins along outer circumferential edges of the bottom plate.
Kensuke MATSUZAWA, Takahiro KOYAMA, Hiromichi GOHARA
Filed: 29 Oct 21
Utility
Semiconductor Device
2 Jun 22
A semiconductor device includes pads arrayed between a region where a transistor portion or a diode portion is disposed and a first end side on an upper surface of a semiconductor substrate, and a gate runner portion that transfers a gate voltage to the transistor portion.
Tetsutaro IMAGAWA
Filed: 16 Feb 22