1128 patents
Page 19 of 57
Utility
Fabrication Method of Semiconductor Device and Test Method of Semiconductor Device
22 Sep 22
Provided is a fabrication method of a semiconductor device comprising an element forming process of forming a semiconductor element in a semiconductor substrate and forming a metal electrode above the semiconductor substrate; a plating process of plating the metal electrode; an annealing process of annealing the semiconductor substrate; a voltage applying process of applying a voltage corresponding to a thickness of the gate insulating film to the gate insulating film after the annealing process; and a judging process of measuring a threshold voltage of the semiconductor element after the voltage applying process, and judging a quality of the semiconductor element based on a measurement result.
Atsushi SHOJI, Soichi YOSHIDA
Filed: 23 Jan 22
Utility
Semiconductor Device
22 Sep 22
A first wiring member bends at a first bent portion in the shape of the letter “L” in a side view and includes a first horizontal portion parallel to the principal surface of a semiconductor chip and a first vertical portion perpendicular to the first horizontal portion.
Satoshi KANEKO
Filed: 27 Jan 22
Utility
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22 Sep 22
Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated.
Sho TAKANO
Filed: 23 Jan 22
Utility
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22 Sep 22
A semiconductor device includes a conductive board, a contact component having a cylindrical through hole and including a main body portion with first and second open ends, and an external connection terminal inserted in the through hole of the contact component, having four outer surfaces extending in an insertion direction to form a quadrangular prism shape, and having four corner portions along an insertion direction pressed by an inner circumferential surface of the through hole of the contact component.
Masaoki MIYAKOSHI
Filed: 31 Jan 22
Utility
idvtkdth3uv5bg3lxly5gmi8hn8hh02h14riqzcehl0bb0u02rf92gro
22 Sep 22
A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first semiconductor region of the first conductivity type selectively provided on a first side of the third semiconductor layer opposite to a second side thereof facing the silicon carbide semiconductor substrate, second semiconductor regions of the second conductivity type that have an impurity concentration higher than that of the second semiconductor layer, trenches, gate electrodes provided via gate insulating films, an interlayer insulating film, a first electrode, and a second electrode.
Masanobu IWAYA, Kensuke HATA
Filed: 23 Feb 22
Utility
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22 Sep 22
A short circuit protection apparatus for a power conversion apparatus supplying power to a load via a plurality of switches connected to each other in parallel includes Ma current detectors each configured to detect a sum of currents flowing through two or more switches among the plurality of switches so as to output a detection signal indicative of the sum that is detected, wherein Ma is 1 less than M, which is the number of the plurality of switches, and a short circuit determiner configured to determine, based on detection signals obtained from the respective Ma current detectors, occurrence of short circuit failure in the plurality of switches to output a cutoff instruction signal for stopping on-off drive of the plurality of switches.
Yasunao SAGA
Filed: 31 Jan 22
Utility
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22 Sep 22
A switching control circuit controls switching of a switching device, which controls a resonance current of a resonant converter, with a frequency corresponding to an output voltage of the resonant converter.
Ryuunosuke ARAUMI, Ryuji YAMADA
Filed: 26 Jan 22
Utility
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22 Sep 22
A driver circuit for driving a switching device having a control electrode.
Shinichiro ADACHI, Hirohisa ARAI
Filed: 26 Jan 22
Utility
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15 Sep 22
A magnetic field generator including: a yoke; and a plurality of main magnetic pole magnets and a plurality of secondary magnetic pole magnets, the main magnetic pole magnets and the secondary magnetic pole magnets comprising a rare earth sintered magnet, having magnetic pole orientations different from each other by substantially 90°, and being alternately arranged in a linear Halbach magnet array without gaps and fixed to the yoke, wherein near contact surfaces of the main magnetic pole magnets and the secondary magnetic pole magnets, a grain boundary diffusion layer is formed in which at least one of Dy or Tb being heavy rare earth elements or a compound of at least one of the Dy or the Tb is diffused into internal grain boundaries from the contact surfaces.
Satoshi IMAMORI, Terukazu AKIYAMA
Filed: 24 Jan 22
Utility
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15 Sep 22
A semiconductor module case formed by injection molding into a box shape using a mold open on a bottom thereof, includes an external terminal disposed on a top face or a side face of the case, the external terminal penetrating through the case from an inside to an outside thereof and being electrically connectable to a semiconductor element inside of the case, and a single first gate for a resin to enter the case.
Takanori SUGIYAMA
Filed: 1 Jun 22
Utility
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15 Sep 22
Provided is a semiconductor module, including: a semiconductor chip; a terminal, configured to extend in a extending direction, and be connected electrically with the semiconductor chip; a sealing resin, configured to seal the semiconductor chip, and cover at least a part of an upper surface of the terminal and at least a part of a lower surface of the terminal; and a lower side resin, configured to extend in the extending direction from the sealing resin, and cover at least a part of the lower surface of the terminal, wherein in the extending direction, a length at which the sealing resin and the lower side resin cover the lower surface of the terminal is greater than a length at which the sealing resin covers the upper surface of the terminal in the extending direction; and wherein the sealing resin and the lower side resin are formed of a same material.
Yoshinori OTOMO
Filed: 23 Jan 22
Utility
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15 Sep 22
The flow speed distribution of a refrigerant in a cooling apparatus is made uniform.
Takahiro KOYAMA
Filed: 30 May 22
Utility
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15 Sep 22
There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.
Takahiro TAMURA, Michio NEMOTO
Filed: 31 May 22
Utility
uhemaq80b3r02phuo51ycjagca8vhafhbu8sox6m0w3b7r
8 Sep 22
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki HOZUMI
Filed: 25 May 22
Utility
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8 Sep 22
Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips.
Kazunaga ONISHI, Takeshi YOKOYAMA, Masaki MARUYAMA
Filed: 23 May 22
Utility
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8 Sep 22
A semiconductor device includes: a high-concentration layer of a first conductivity-type provided on a drift layer of the first conductivity-type; a buried layer of a second conductivity-type provided in the high-concentration layer; an injection regulation region of the second conductivity-type provided on the high-concentration layer; a high-concentration region of the second conductivity-type provided inside the injection regulation region; a carrier supply region of the first conductivity-type provided at an upper part of the injection regulation region; and an insulated gate structure provided inside a trench, wherein a ratio of the impurity concentration of the injection regulation region to an impurity concentration of an upper part of the high-concentration layer is 0.5 or greater and 2 or smaller.
Takashi TSUJI
Filed: 31 Jan 22
Utility
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8 Sep 22
A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed.
Kensuke TAKENAKA, Takeshi TAWARA, Shinsuke HARADA
Filed: 3 Mar 22
Utility
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8 Sep 22
At any timing after formation of gate electrodes, particle beam irradiation is performed to a semiconductor wafer having an n−-type drift region constituted by an n−-type epitaxial layer and having an n-type impurity concentration that is higher than a target majority carrier concentration (design value) of the n−-type drift region.
Yoshihito ICHIKAWA
Filed: 28 Jan 22
Utility
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8 Sep 22
A method for manufacturing a nitride semiconductor device including: forming N-type regions in a nitride semiconductor layer; implanting ions of an acceptor element into a region sandwiched by the N-type regions in the nitride semiconductor layer; and forming a P-type region sandwiched by the N-type regions by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element.
Ryo TANAKA, Yuki OHUCHI, Katsunori UENO, Shinya TAKASHIMA
Filed: 24 Jan 22
Utility
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8 Sep 22
A method for manufacturing a nitride semiconductor device including: forming an N-type region in a nitride semiconductor layer; implanting ions of an acceptor element into a region under the N-type region in the nitride semiconductor layer; and forming a first P-type region under the N-type region by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element.
Ryo TANAKA, Yuki OHUCHI, Katsunori UENO, Shinya TAKASHIMA
Filed: 25 Jan 22