1128 patents
Page 21 of 57
Utility
Silicon Carbide Semiconductor Device
11 Aug 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, provided in the second semiconductor layer at positions facing the first semiconductor regions in a depth direction and having an impurity concentration higher than an impurity concentration of the second semiconductor layer, trenches, gate insulating films, gate electrodes, a first electrode, a second electrode, and third electrodes.
Shinichiro MATSUNAGA
Filed: 30 Dec 21
Utility
Power Converter
11 Aug 22
An object of the present invention is to provide a power converter capable of preventing upsizing of a chip on which a switching element is formed and detecting the temperature in a switching operation of the switching element.
Takeshi KAMIMURA
Filed: 27 Dec 21
Utility
k95gh m8i2m3uxdiajek
4 Aug 22
A semiconductor includes a multilayer substrate including an insulating plate and a plurality of circuit boards disposed on a top face of the insulating plate, a semiconductor element disposed on a top face of one of the plurality of circuit boards, and having a main electrode disposed on a top face thereof, and a temperature measurement device for measuring a temperature of the semiconductor element.
Shinichi MASUDA
Filed: 4 Jan 22
Utility
jj3bf7bj0y1izrun06ezi81
4 Aug 22
A semiconductor device includes: a pad; a control circuit; a plurality of high-potential-side circuit regions having distances to the pad different from each other, each including a gate drive circuit, a SET-side level shifter, a RESET-side level shifter, and a circular wire; a SET-side wire electrically connects the pad with the SET-side level shifters; and a RESET-side wire electrically connects the pad with the RESET-side level shifters, wherein the circular wire located closer to the pad is electrically connected to the SET-side wire and the RESET-side wire via the circular wire 8u located further from the pad.
Akihiro JONISHI
Filed: 27 Dec 21
Utility
rnclphjd3zu6fwehnxbi4b141ha2400 lno0bi0bnokex77
28 Jul 22
A semiconductor device includes n-type drift layer, n-type first current spreading layer on top surface of the drift layer, p-type base region on top surface of the first current spreading layer, p-type gate-bottom protection region inside the first current spreading layer, p-type base-bottom embedded region separated from the gate-bottom protection region and in contact with bottom surface of the base region, n-type second current spreading layer having side surface opposed to the gate-bottom protection region and in contact with side surface of the base-bottom embedded region, and insulated gate electrode structure inside trench penetrating the base region to reach the gate-bottom protection region.
Keiji OKUMURA
Filed: 23 Nov 21
Utility
c105upcrhhca1wvltgidsym3gnw60t30mxoy fop558
21 Jul 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first semiconductor type, a first semiconductor layer of the first semiconductor type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first semiconductor type, trenches, a gate insulating film, and gate electrodes.
Shinji FUJIKAKE
Filed: 30 Nov 21
Utility
37isknwl48x91a6dr4iuznmzlpr2l7kc8sbg
21 Jul 22
A fuel cell system includes fuel cell stacks, each of which includes a plurality of fuel cells that are connected in series and generate electricity through an electrochemical reaction between a fuel gas and an oxidant gas, fuel cell cartridges, each of which has headers that supplies the fuel gas and the oxidant gas to the fuel cell stacks and discharges a fuel off-gas and an oxidant off-gas from the fuel cell stacks, a fuel gas supply line that supplies the fuel gas to the fuel cell cartridges, a fuel off-gas discharge line that discharges the fuel off-gas from the fuel cell cartridges, and a first adjustment member provided in the fuel gas supply line or the fuel off-gas discharge line, and adjusting a flow rate of the fuel gas or the fuel off-gas, the first adjustment member including a first flexible pipe.
Kuniyuki TAKAHASHI, Taichiro KATO
Filed: 31 Mar 22
Utility
ni45ucdmn00b2n0nfez w442d7r4ugpi6
14 Jul 22
A fuel cell system includes an anode gas flow channel, a cathode gas flow channel, a solid oxide fuel cell to which a fuel gas from the anode gas flow channel and an air from the cathode gas flow channel are supplied to generate electricity through an electrochemical reaction between the fuel gas and the air, and a steam generator that generates a steam to be mixed with the fuel gas upon an operation of the solid oxide fuel cell being stopped.
Kouhei MURAKAMI, Kuniyuki TAKAHASHI
Filed: 31 Mar 22
Utility
ysigvjlfh nlkt5kv2if94acw
14 Jul 22
A vertical MOSFET having a compound semiconductor layer is provided, the vertical MOSFET comprising a gate electrode, a gate insulating film provided between the gate electrode and the compound semiconductor layer, a drift region provided directly in contact with at least a part of the gate insulating film and being a part of the compound semiconductor layer, and a high resistance region provided at least in the drift region, is positioned below at least a part of the gate insulating film, and has a higher resistance value per unit length than that of the drift region.
Katsunori UENO
Filed: 30 Mar 22
Utility
vu10ynza1attxt12gdgs1ppoe3va
14 Jul 22
A fuel system includes a fuel cell module including a solid oxide fuel cell stack that generates electricity through an electrochemical reaction between a fuel gas and an oxidant gas, a control unit that controls the fuel cell module, a detection unit for detecting a loss of control by the control unit, and an opening and closing apparatus configured to maintain gases inside the fuel cell module or release the gases in the fuel cell module outside the fuel cell module.
Kuniyuki TAKAHASHI
Filed: 31 Mar 22
Utility
p7u0j9qxtrrmxxgu1qnn
14 Jul 22
Provided is a fuel cell system that can prevent oxidation degradation of a fuel electrode, even in the case where a control unit stops abnormally.
Kuniyuki TAKAHASHI
Filed: 31 Mar 22
Utility
phx0ti8n2r4n368iavnolqxj5w
14 Jul 22
An integrated circuit for a power supply circuit configured to generate an output voltage of a target level from an alternating current (AC) voltage.
Yuta ENDO, Takato SUGAWARA
Filed: 29 Mar 22
Utility
ij87kj41j5pwf29faqn6xqv5v4zfxi nlxphioc6c2lech2tn
14 Jul 22
Provided is a snubber apparatus comprising: N parallel charge paths, each of which has a positive-side capacitor, a first diode, and a negative-side capacitor sequentially connected in series between a positive-side terminal and a negative-side terminal, and that allows current to flow from the positive-side terminal's side to the negative-side terminal's side; and N+1 parallel discharge paths, each of which has a second diode connected between the negative-side terminal or the negative-side capacitor in the k-th charge path of the N charge paths, and the positive-side capacitor in the (k+1)-th charge path of the N charge paths or the positive-side terminal, and that allows current to flow from the negative-side terminal's side to the positive-side terminal's side via at least one of the negative-side capacitor and the positive-side capacitor, at least one of the charge paths having a plurality of sections are turned and adjacent to each other.
Qichen WANG, Ryuji YAMADA
Filed: 25 Nov 21
Utility
d3d7x7u82w3izi4x0i 8i
14 Jul 22
Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.
Harunobu IKEDA
Filed: 25 Nov 21
Utility
xxvae2oh99 vltilg4bhb96q48a9v9
30 Jun 22
A semiconductor package includes a flat plate-shaped terminal integrally formed with a housing portion for a semiconductor chip and a rod-shaped terminal pin that penetrates through a through-hole of the plate-shaped terminal.
Kimihiro ASHINO
Filed: 30 Nov 21
Utility
gqp18kvgaa75wvyrbn1cyqcncaf8one8x9rua4u5wwcu
30 Jun 22
A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.
Yuichiro HINATA, Yuma MURATA, Naoyuki KANAI, Ryoichi KATO
Filed: 6 Dec 21
Utility
o98bqkzdo9w6gy8catcf4o8o4wy7wnis19tpky165cgyb35q
30 Jun 22
A circuit pattern, which is a second negative electrode wiring, and a horizontally extending area of a circuit pattern, which is a first negative electrode wiring, are connected electrically and mechanically by a vertically extending area of the circuit pattern and wires, which are an inter-negative-electrode wiring.
Masaki TAKAHASHI, Kousuke KOMATSU, Rikihiro MARUYAMA
Filed: 29 Oct 21
Utility
a53z7e5 ffu4kwczmm1d54p0rkahdhf4y5tn4mw0v61meuyc68z
30 Jun 22
Provided is a driving apparatus that drives a switching device, the driving apparatus including a reference potential line, a first switching control unit configured to switch whether to connect a control terminal of the switching device to the reference potential line, a first resistor element arranged in series to the first switching control unit in a path from the control terminal of the switching device to the reference potential line, a first capacitor provided in parallel with the first resistor element in the path from the control terminal of the switching device to the reference potential line, and a discharge control unit configured to control whether to discharge the first capacitor.
Ryoga KIGUCHI, Hiromu TAKUBO
Filed: 25 Oct 21
Utility
zxdaxxuzz404hrfosf7rujxb4al10a
30 Jun 22
A switching control circuit for controlling a power supply circuit that includes an inductor receiving a rectified voltage corresponding to an AC voltage, and a transistor controlling an inductor current flowing through the inductor.
Ryuji YAMADA
Filed: 26 Oct 21
Utility
etfp4aho2rhwnd1piyul5be
23 Jun 22
Seizo KITAGAWA, Shinjiro SUZUKI, Hiroshi EMORI, Kazuki NEBASHI
Filed: 10 Dec 21