1128 patents
Page 18 of 57
Utility
Magnetic Component and Power Converter
13 Oct 22
A core includes a first core part, a second core part, and a spacer.
Akihiro HINO
Filed: 23 Feb 22
Utility
Semiconductor Device and Semiconductor Chip
13 Oct 22
A semiconductor device includes a first semiconductor chip including a plurality of first control electrodes, each of which is disposed at a respective one of corner portions on a first front surface thereof, a first output electrode disposed on the first front surface, and a first input electrode disposed on a first rear surface thereof, a second semiconductor chip including a plurality of second control electrodes, each of which is disposed at a respective one of corner portions on a second front surface thereof, a second output electrode disposed on the second front surface, and a second input electrode disposed on a second rear surface thereof, the second semiconductor chip being disposed adjacent to the first semiconductor chip, and a first connection wire which connects one of the first control electrodes and one of the second control electrodes.
Akio YAMANO
Filed: 29 Jun 22
Utility
Semiconductor Device and Manufacturing Method
13 Oct 22
Provided is a semiconductor device provided with an IGBT, comprising: a semiconductor substrate having upper and lower surfaces, throughout which bulk donors are distributed; a hydrogen peak including a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, at which a hydrogen chemical concentration shows a local maximum value; an upper tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface; and a lower tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail; and a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 μm or more in a direction from the local maximum of the hydrogen peak toward the upper surface.
Yosuke SAKURAI, Seiji NOGUCHI, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki UCHIDA
Filed: 24 Mar 22
Utility
Semiconductor Module and Semiconductor Apparatus
13 Oct 22
A semiconductor module includes: a first power semiconductor element that includes a first main current electrode; a main body that accommodates therein the first power semiconductor element; and a first main current terminal connectable to the first main current electrode.
Yushi SATO
Filed: 22 Feb 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.
Misaki TAKAHASHI, Yuichi HARADA, Kouta YOKOYAMA
Filed: 23 Jun 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device in which a lifetime control region including a lifetime killer is provided, below a base region, from at least a part of a transistor portion to a diode portion, the transistor portion includes: a main region spaced apart from the diode portion in a top view; a boundary region located between the main region and the diode portion and overlapping the lifetime control region in a top view; and a plurality of gate trench portions provided from an upper surface of the semiconductor substrate to a drift region through the base region, the plurality of gate trench portions include: a first gate trench portion provided in the main region; and a second gate trench portion provided in the boundary region, and a signal transmission timing of the first gate trench portion is different from a signal transmission timing of the second gate trench portion.
Motoyoshi KUBOUCHI
Filed: 23 Feb 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion.
Shigeki SATO, Soichi YOSHIDA, Kouji ASAHI, Seiji MOMOTA
Filed: 24 Feb 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device including a gate trench portion and a dummy trench portion adjacent to the gate trench portion.
Kaname MITSUZUKA, Yuki KARAMOTO
Filed: 23 Jun 22
Utility
Semiconductor Device
6 Oct 22
A semiconductor device includes n-type drift layer, n-type current spreading layer having higher impurity concentration than the drift layer, p-type base region provided on top surface, p-type gate-bottom protection region located in the current spreading layer, having first bottom edge portion formed of curved surface, p-type base-bottom embedded region in contact with bottom surface of the base region, having second bottom edge portion formed of curved surface on side surface facing the gate-bottom protection region, being separated from the gate-bottom protection region, and insulated gate electrode structure provided in trench penetrating through the base region to reach the gate-bottom protection region.
Tomohiro MORIYA
Filed: 28 Jan 22
Utility
Semiconductor Device and Fabrication Method
6 Oct 22
A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided.
Yasunori AGATA, Takahiro TAMURA, Toru AJIKI
Filed: 23 Jun 22
Utility
Semiconductor Device
6 Oct 22
A semiconductor device, including, a drift region of a first conductivity type provided on a semiconductor substrate; a field stop region of a first conductivity type provided below the drift region and having one or more peaks; and a collector region of a second conductivity type provided below the field stop region, wherein when an integral concentration of the collector region is set to be x [cm−2], a depth of a first peak that is a shallowest from the back surface of the semiconductor substrate out of the one or more peaks is set to be y1 [μm], line A1: y1=(−7.4699E−01)ln(x)+(2.7810E+01), and line B1: y1=(−4.7772E−01)ln(x)+(1.7960E+01), a depth of the first peak and the integral concentration are within a range between a line A1 and a line B1, is provided.
Yasunori AGATA, Tohru SHIRAKAWA
Filed: 20 Jun 22
Utility
Semiconductor Device
6 Oct 22
Provided is a semiconductor device, wherein the buffer region of the semiconductor substrate has a plurality of hydrogen chemical concentration peaks arranged in different positions in the depth direction of the semiconductor substrate, a plurality of doping concentration peaks; and a high concentration region provided between the deepest hydrogen chemical concentration peak and the drift region, wherein the doping concentration distribution of the depth direction of the high concentration region has a slope where the doping concentration gradually decreases toward the drift region, wherein the slope includes a convex portion on top, wherein in an approximate concentration line that approximates a gradient of the slope with a straight line, when the concentration in a depth position of the shallowest doping concentration peak is referred to as the shallowest reference concentration, the doping concentration of the shallowest doping concentration peak is from 5% to 50% of the shallowest reference concentration.
Takamasa ISHIKAWA, Noriaki YAO
Filed: 21 Jun 22
Utility
Semiconductor Device
29 Sep 22
A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented.
Yuko NAKAMATA
Filed: 1 Feb 22
Utility
Control Apparatus and Control Method
29 Sep 22
A control apparatus includes a first controller which controls an operation of a door of a railway vehicle, a second controller capable of controlling the operation of the door, and a diagnosis tester.
Kotaro UMEZAWA, Takuya WATANABE
Filed: 23 Feb 22
Utility
Semiconductor Element Bonding Portion and Semiconductor Device
29 Sep 22
An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin.
Masaaki TACHIOKA, Takashi SAITO
Filed: 28 Jan 22
Utility
Monitoring Apparatus and Monitoring Method
29 Sep 22
A monitoring apparatus includes a sensing circuitry configured to sense a locked or released state of a door of a railway vehicle, or sense an open or closed state of the door, and a processor.
Hidenori MATSUSHIMA, Kenji FUJITA
Filed: 23 Feb 22
Utility
Integrated Circuit
29 Sep 22
An integrated circuit for a power supply circuit that includes a state-indicating circuit, which is a first or second circuit when the power supply circuit is of a non-isolated or isolated type, as the case may be.
Nobuyuki HIASA
Filed: 26 Jan 22
Utility
Semiconductor Device, Semiconductor Package, Semiconductor Module, and Semiconductor Circuit Device
29 Sep 22
A semiconductor device that can detect temperature appropriately is provided.
Kenichiro SATO
Filed: 16 Jun 22
Utility
Reciprocal Calculating Method and Reciprocal Calculating Apparatus
29 Sep 22
With respect to a method for execution by an information processing apparatus, the method includes calculating a reciprocal in multiplication on a residue field modulo a power of 2.
Kenji TAKATSUKASA
Filed: 23 Feb 22
Utility
Semiconductor Module
22 Sep 22
A semiconductor module is provided with a semiconductor element, a case housing the semiconductor element, and an external terminal that electrically connects a main electrode of the semiconductor element to an external conductor.
Taichi ITOH
Filed: 1 Jun 22