849 patents
Page 38 of 43
Utility
Method for manufacturing semiconductor device having thinned fins
27 Jan 20
Provided is a stable manufacturing method for a semiconductor device.
Masaaki Shinohara
Filed: 18 Jan 17
Utility
Semiconductor device and manufacturing method thereof
27 Jan 20
The present invention provides a method of manufacturing a semiconductor device to improve the manufacturing yield of the semiconductor device.
Tetsuji Togami
Filed: 15 Oct 18
Utility
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27 Jan 20
A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level.
Akihiro Nakahara, Makoto Tanaka
Filed: 24 Apr 17
Utility
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20 Jan 20
Provided is a semiconductor device including: an AC voltage generation unit that generates an AC voltage having an amplitude according to a control signal; a resistance element provided in series with a measurement target, the AC voltage being applied to the resistance element; a voltage detecting unit that detects that a difference voltage between two ends of the resistance element has reached a specified voltage; and a control unit that outputs the control signal to the AC voltage generation unit to cause the AC voltage generation unit to generate the AC voltage so that the difference voltage reaches the specified voltage, based on a detection result of the voltage detecting unit.
Masato Hirai, Siewling Lim
Filed: 13 Sep 15
Utility
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20 Jan 20
An operating condition is controlled from viewpoints both processing capacity and power consumption.
Takahiko Gomi, Ryu Nagasawa, Gaku Inami
Filed: 29 Nov 17
Utility
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20 Jan 20
In a processor including an instruction prefetch buffer to prefetch a group of instructions with continuous addresses from a memory, the probability of occurrence of the situation where a bus is occupied by the instruction prefetch more than necessary is reduced.
Hajime Yamashita, Tatsuya Kamei
Filed: 7 Mar 18
Utility
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20 Jan 20
Error notification by a bus master for a speculative access and error notification by a bus slave for a non-speculative access are achieved while a circuit scale of the bus master is suppressed.
Hajime Yamashita
Filed: 18 Apr 18
Utility
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20 Jan 20
Naoki Mitsuishi
Filed: 18 Nov 17
Utility
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20 Jan 20
A security camera system capable of reducing an amount of information without degrading useful information is provided.
Kentarou Niikura
Filed: 16 Apr 18
Utility
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20 Jan 20
A semiconductor storage device includes: a first memory cell joined to first and second word lines and a first match line; and a second memory cell joined to the first and second word lines and a second match line.
Makoto Yabuuchi
Filed: 8 Jul 18
Utility
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20 Jan 20
A semiconductor device is comprised of a memory cell array with multiple memory cells arranged in a matrix, multiple bit-line pairs provided for each memory cell column in the memory cell array, multiple input/output circuits provided respectively corresponding to the multiple bit-line pairs, and as interface control circuit that controls the data input/output to the multiple input/output circuits when performing the data write and data read for each memory cell row in a normal mode.
Shinji Tanaka
Filed: 8 Apr 18
Utility
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20 Jan 20
A semiconductor device includes a semiconductor chip mounted over a wiring substrate.
Kazuyuki Nakagawa, Keita Tsuchiya, Yoshiaki Sato, Shuuichi Kariyazaki, Norio Chujo, Masayoshi Yagyu, Yutaka Uematsu
Filed: 29 Oct 18
Utility
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20 Jan 20
The semiconductor device includes a first inserter and a second inverter which is connected thereto in series.
Takeshi Okagaki
Filed: 6 Jan 19
Utility
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20 Jan 20
In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semiconductor layer, and a barrier layer including a third nitride semiconductor layer are sequentially laminated, and a fourth nitride semiconductor layer is further laminated thereover.
Yasuhiro Okamoto
Filed: 4 Jul 18
Utility
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20 Jan 20
An on-vehicle communication device has a communication unit which communicates with a roadside device, a roadside device position information storage unit which stores in advance first position information indicating a position of the roadside device, a vehicle position information acquisition unit which acquires second position information indicating a position of the vehicle, an approach decision unit which decides whether the vehicle approaches the roadside device on the basis of the first position information stored in the roadside device position information storage unit and the second position information that the vehicle position information acquisition unit acquires and a communication control unit which switches a state of the communication unit from a power-saving state to a non-power-saving state in a case where the approach decision unit decides that the vehicle approaches the roadside device.
Yasuhiro Sagesaka
Filed: 20 Aug 18
Utility
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13 Jan 20
The present disclosure provides a technique of suppressing competition of processes in a semiconductor device employing a multilayer bus configuration.
Takashi Yamaguchi
Filed: 8 Aug 18
Utility
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6 Jan 20
A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance.
Hiroyuki Kunishima, Yasutaka Nakashiba, Masaru Wakabayashi, Shinichi Watanuki
Filed: 30 Oct 17
Utility
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6 Jan 20
A substrate including an insulating layer, a semiconductor layer, and an insulating film stacked on a semiconductor substrate and having a trench filled with an element isolation portion is provided.
Takahiro Maruyama, Yoshiki Yamamoto, Toshiya Saitoh
Filed: 14 Nov 18
Utility
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6 Jan 20
A semiconductor device includes a semiconductor substrate, a gate electrode, and a first contact plug.
Taro Moriya, Hiroyoshi Kudou, Hiroshi Yanagigawa
Filed: 4 Jul 18
Utility
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6 Jan 20
An oil-pump motor drive apparatus includes a current detection unit for detecting each of multi-phase currents flowing through coils of a stator, a control unit for converting the detected multi-phase currents into a d-axis current Id and a q-axis current Iq, calculating a phase error between an actual rotational position of the rotor and an imaginary rotational position by comparing the d-axis current Id with a d-axis current command value Idref and comparing the q-axis current Iq with the d-axis current command value Idref, performing control so that the phase error gets closer to zero, and outputting voltage command values indicating voltages to be applied to respective phases of the brushless motor, to a motor drive circuit, in which the control unit sets the d-axis current command value Idref to a value larger than zero when the number of revolutions of the motor is smaller than a predetermined number.
Naohiko Aoki, Kiyoshi Ishikawa
Filed: 1 May 18