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Renesas Electronics (RNECF) USPTO patentsUtility grant

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849 patents

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Semiconductor device and manufacturing method thereof

This invention is to improve a performance of a semiconductor device.

Yoshiyuki Kawashima, Takashi Hashimoto

Filed: 23 Feb 18

Semiconductor device and manufacturing method thereof

A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first insulating film formed on the first pad electrode; and a first organic insulating film formed over the first insulating film.

Filed: 22 May 18

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An area of a semiconductor device having a FINFET can be reduced.

Takeshi Okagaki, Koji Shibutani, Makoto Yabuuchi, Nobuhiro Tsuda

Filed: 5 Aug 18

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Filed: 21 Mar 17

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A reception unit (13) sequentially selects a plurality of sensor coils and receives a signal from a position indicator via the sensor coil that has been selected, and an operational circuit (14) detects, using an amplitude value and a phase value of the signal received by the reception unit (13) via each of the plurality of sensor coils, coordinates of a position indicated by the position indicator and a writing force of the position indicator.

Masato Hirai, Kosuke Fuwa

Filed: 15 Apr 17

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The size of a multi-processor is prevented from increasing even when the number of processor cores is increased.

Motoyasu Takabatake, Hisashi Shiota, Atsushi Nakamura, Yuji Chiba

Filed: 23 Oct 17

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A semiconductor device, a semiconductor system, and a control method of a semiconductor device are capable of accurately monitoring the lowest operating voltage of a circuit to be monitored.

Kazuki Fukuoka, Toshifumi Uemura, Yuko Kitaji, Yosuke Okazaki, Akira Murayama

Filed: 13 Sep 17

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A semiconductor device includes a first mode and a second mode different from the first mode, includes a memory circuit including a first switch, a memory array, and a peripheral circuit.

Yuichiro Ishii, Atsushi Miyanishi, Kazumasa Yanagisawa

Filed: 10 Feb 19

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Provided is a semiconductor device having improved performance.

Masaaki Shinohara

Filed: 10 May 17

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Characteristics of a semiconductor device are improved.

Takayuki Igarashi, Takuo Funaya

Filed: 29 Jul 18

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A semiconductor device having an SRAM which includes: a monolithic first active region in which a first transistor and a fifth transistor are disposed; a second active region separated from the first active region, in which a second transistor is disposed; a monolithic third active region in which a third transistor and a sixth transistor are disposed; and a fourth active region separated from the third active region, in which a fourth transistor is disposed.

Masao Morimoto, Noriaki Maeda, Yasuhisa Shimazaki

Filed: 5 Sep 18

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A semiconductor device is obtained in which a first insulating film for a gate insulating film of a memory element is formed over a semiconductor substrate in a memory region, a second insulating film for a gate insulating film of a lower-breakdown-voltage MISFET is formed over the semiconductor substrate in a lower-breakdown-voltage MISFET formation region, and a third insulating film for a gate insulating film of a higher-breakdown-voltage MISFET is formed over the semiconductor substrate in a higher-breakdown-voltage MISFET formation region.

Hideaki Yamakoshi, Takashi Hashimoto, Shinichiro Abe, Yuto Omizu

Filed: 18 Jun 18

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A method of manufacturing a semiconductor device includes forming a first insulating film having a first thickness over a main surface of a semiconductor substrate and then forming a second insulating film having a second thickness larger than the first thickness over the first insulating film, sequentially processing the second insulating film, the first insulating film, and the semiconductor substrate to form a plurality of trenches and to form a plurality of projecting portions which include portions of the semiconductor substrate extending in a first direction along the main surface of the semiconductor substrate and are spaced apart from each other in a second direction orthogonal to the first direction along the main surface of the semiconductor substrate, and depositing a third insulating film over the main surface of the semiconductor substrate such that the third insulating film is embedded in the trenches.

Filed: 8 Jan 19

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To provide a semiconductor device capable of having an ONO-film-configuring second oxide film with an optimized thickness.

Yoshiyuki Kawashima, Atsushi Yoshitomi

Filed: 26 Jun 18

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A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation film disposed at the first surface, and a gate electrode.

Filed: 17 Dec 17

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The present invention provides a semiconductor device capable of properly performing equalization even when the transfer rate of serial data is changed.

Kazuto Kanomata

Filed: 11 Sep 17

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A microcomputer is provided for each of industrial apparatuses to synchronously control them and includes a CPU, a peripheral module, and a communication interface.

Shinichi Suzuki, Yuichi Takitsune

Filed: 12 Feb 18

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Provided is a semiconductor storage device including: first memory cells; first word lines; first bit lines; a first common bit line; second memory cells; second word lines; second bit lines; a second common bit line; a first selection circuit that connects the first common bit line to a first bit line selected from the first bit lines; a second selection circuit that connects the second common bit line to a second bit line selected from the second bit lines; a word line driver that activates any one of the first and second word lines; a reference current supply unit that supplies a reference current to a common bit line among the first and second common bit lines, the common bit line not being electrically connected to a data read target memory cell; and a sense amplifier that amplifies a potential difference between the first and second common bit lines.

Makoto Yabuuchi

Filed: 25 May 17

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The reliability of a semiconductor device is improved.

Shigeaki Saito, Yoshito Nakazawa, Hitoshi Matsuura, Yukio Takahashi

Filed: 3 May 18

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In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.

Masaru Kadoshima, Masahiko Fujisawa

Filed: 9 Dec 17

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