22699 patents
Page 16 of 1135
Utility
Differential crosstalk self-cancelation in stackable structures
2 Jan 24
Embodiments include assemblies.
Zhichao Zhang, Zhe Chen, Srikant Nekkanty, Sriram Srinivasan
Filed: 28 Feb 20
Utility
Methods of embedding magnetic structures in substrates
2 Jan 24
Methods/structures of forming embedded inductor structures are described.
Sai Vadlamani, Prithwish Chatterjee, Robert A. May, Rahul S. Jain, Lauren A. Link, Andrew J. Brown, Kyu Oh Lee, Sheng C. Li
Filed: 3 Jan 22
Utility
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2 Jan 24
Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a selective bottom-up approach, are described.
Nicole Thomas, Ehren Mannebach, Cheng-Ying Huang, Marko Radosavljevic
Filed: 27 Apr 22
Utility
iioz6zggnqs3nge4279nwjztdzz1ry8snm8iq606
2 Jan 24
Gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, are described.
Tanuj Trivedi, Rahul Ramaswamy, Jeong Dong Kim, Babak Fallahazad, Hsu-Yu Chang, Ting Chang, Nidhi Nidhi, Walid M. Hafez
Filed: 21 Jul 22
Utility
d7zsrmjbx0yzvfc3b53p4vs53qm0vpg972hju
2 Jan 24
Disclosed herein are dual gate trench shaped thin film transistors and related methods and devices.
Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Shriram Shivaraman, Benjamin Chu-Kung, Yih Wang, Tahir Ghani
Filed: 1 Oct 21
Utility
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2 Jan 24
In some examples, an apparatus is to adjust charge termination voltage.
Naoki Matsumura, Aaron Gorius
Filed: 18 Jun 19
Utility
s76bi 956o9fcou9atnsxhh4bx76zonuzjay1c3c54q16yv4hdbdo97d
2 Jan 24
Examples herein relate to a storage system that separately handles portions of a write operation that are aligned and misaligned with respect to retrievable segments from a storage device.
Peng Li, Jawad B. Khan, Sanjeev N. Trika
Filed: 12 Dec 19
Utility
9g3npo7uz0al1p8nu5xoob01krpn5zr 6j41fkajyx72jw5wf38tr4yun2oh
2 Jan 24
Technologies for providing efficient reprovisioning in an accelerator device include an accelerator sled.
Evan Custodio, Susanne M. Balle, Francesc Guim Bernat, Slawomir Putyrski, Joe Grecco, Henry Mitchel
Filed: 10 Sep 21
Utility
pcx8wfnkqpp545d3cyta3a 74kdsfwgfbmvrd2itqvqhext7t03cp
2 Jan 24
Methods, systems and apparatuses may provide for technology that selects a player from a plurality of players based on an automated analysis of two-dimensional (2D) video data associated with a plurality of cameras, wherein the selected player is nearest to a projectile depicted in the 2D video data.
Yikai Fang, Qiang Li, Wenlong Li, Haihua Lin, Chen Ling, Ming Lu, Hongzhi Tao, Xiaofeng Tong, Yumeng Wang
Filed: 13 Aug 19
Utility
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2 Jan 24
Techniques are provided for reverberation compensation for far-field speaker recognition.
Gokcen Cilingir, Narayan Biswal
Filed: 21 May 21
Utility
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2 Jan 24
A computing platform comprising a plurality of disaggregated data center resources and an infrastructure processing unit (IPU), communicatively coupled to the plurality of resources, to compose a platform of the plurality of disaggregated data center resources for allocation of microservices cluster.
Soham Jayesh Desai, Reshma Lal
Filed: 24 Jun 21
Utility
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2 Jan 24
A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio.
Marie Krysak, Florian Gstrein, Manish Chandhok
Filed: 7 Dec 21
Utility
klbd0s7i1xgh55w6qn1bu751q3mluz41dd4beahhh6jesrp5 tbg6qmtf
2 Jan 24
Vertical thin film transistors (TFTs) including a gate electrode pillar clad with a gate dielectric.
Yih Wang, Abhishek Sharma, Sean Ma, Van H. Le
Filed: 25 Jan 22
Utility
626h9njzsniu5clzi96oycfverroyc6i7td2p l9n9
2 Jan 24
Embodiments are generally directed to memory prefetching in multiple GPU environment.
Joydeep Ray, Aravindh Anantaraman, Valentin Andrei, Abhishek R. Appu, Nicolas Galoppo von Borries, Varghese George, Altug Koker, Elmoustapha Ould-Ahmed-Vall, Mike Macpherson, Subramaniam Maiyuran
Filed: 20 Jan 22
Utility
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2 Jan 24
Embodiments described herein are generally directed to improvements relating to power, latency, bandwidth and/or performance issues relating to GPU processing/caching.
Subramaniam Maiyuran, Durgaprasad Bilagi, Joydeep Ray, Scott Janus, Sanjeev Jahagirdar, Brent Insko, Lidong Xu, Abhishek R. Appu, James Holland, Vasanth Ranganathan, Nikos Kaburlasos, Altug Koker, Xinmin Tian, Guei-Yuan Lueh, Changliang Wang
Filed: 11 Nov 20
Utility
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2 Jan 24
Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, and methods of fabricating neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions, are described.
Leonard P. Guler, Biswajeet Guha, Tahir Ghani, Swaminathan Sivakumar
Filed: 22 Jun 22
Utility
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2 Jan 24
Tunneling Field Effect Transistors (TFETs) are promising devices in that they promise significant performance increase and energy consumption decrease due to a steeper subthreshold slope (for example, smaller sub-threshold swing).
Cheng-Ying Huang, Jack Kavalieros, Ian Young, Matthew Metz, Willy Rachmady, Uygar Avci, Ashish Agrawal, Benjamin Chu-Kung
Filed: 16 May 22
Utility
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28 Dec 23
An example of an apparatus may include an array of linear cell channels and a string of NAND memory cells arranged along a cell channel of the array of linear cell channels, where a polysilicon cell channel layer comprises material with less than E17 halogen atoms per cubic centimeter, where a thickness of the polysilicon cell channel layer is less than or equal to 25 nanometers, and where an area-weighted grain height mean of the polysilicon cell channel layer is greater than 30 nanometers.
Jessica S. Kachian
Filed: 12 Sep 23
Utility
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28 Dec 23
Cold plates for secondary side components of printed circuit boards are disclosed herein.
Prabhakar Subrahmanyam, Tejas J. Shah, Yi Xia, Ying-Feng Pang, Mark Lawrence Bianco, Vishnu Prasadh Sugumar, Vikas Kundapura Rao, Srinivasa Rao Damaraju, Ridvan Amir Sahan, Emad Shehadeh Al-Momani, Rahima Khatun Mohammed, Mirui Wang, Devdatta Prakash Kulkarni
Filed: 29 Jun 23
Utility
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28 Dec 23
IC devices with logic circuits using vertical transistors with backside source or drain (S/D) regions, and related assemblies and methods, are disclosed herein.
Sagar Suthram, Tahir Ghani, Anand S. Murthy, Wilfred Gomes, Pushkar Sharad Ranade, Abhishek A. Sharma, Rishabh Mehandru
Filed: 10 May 23