3198 patents
Page 3 of 160
Utility
Shutter disk
2 Jan 24
Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate.
Kang Zhang, Junqi Wei, Yueh Sheng Ow, Kelvin Boh, Yuichi Wada, Ananthkrishna Jupudi, Sarath Babu
Filed: 11 Oct 21
Utility
Correcting component failures in ion implant semiconductor manufacturing tool
2 Jan 24
A method includes determining, based on sensor data, that one or more components of substrate processing equipment are within a pre-failure window that is after a normal operation window.
Tianqing Liao, Sima Didari, Harikrishnan Rajagopal
Filed: 27 May 22
Utility
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2 Jan 24
Implementations disclosed describe an integrated sensor controller comprising a sensor circuit and a logic circuit.
Kiyki-Shiy Shang, Mikhail Taraboukhine, Venkata Raghavaiah Chowdhary Kode
Filed: 19 Aug 20
Utility
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2 Jan 24
A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit a film stack on a surface of a substrate, wherein the film stack comprises a plurality of layers of a first material and a plurality of layers of a second material.
Bharath Ram Sundar, Raman K. Nurani, Utkarsha Avinash Dhanwate, Ramakrishnan S. Hariharan, Suresh Bharatharajan Kudallur, Vishwath Ram Amarnath
Filed: 3 Feb 21
Utility
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2 Jan 24
The present disclosure relates to semiconductor core assemblies and methods of forming the same.
Han-Wen Chen, Steven Verhaverbeke, Giback Park, Kyuil Cho, Kurtis Leschkies, Roman Gouk, Chintan Buch, Vincent Dicaprio
Filed: 27 Nov 19
Utility
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2 Jan 24
Process chamber, high voltage measurement systems and methods for monitoring the output of a high voltage power supply are described.
Prakash Ravanan
Filed: 26 Mar 21
Utility
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19 Dec 23
Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber.
Shuran Sheng, Lin Zhang, Joseph C. Werner
Filed: 2 Nov 22
Utility
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19 Dec 23
An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures.
David Gunther, Jiao Song, Kirankumar Neelasandra Savandaiah, Irena H. Wysok, Anthony Chih-Tung Chan
Filed: 31 Jul 20
Utility
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19 Dec 23
Embodiments of the present disclosure relate to a shadow frame support with one or more flow controllers and a method of controlling the flow of gases through the shadow frame support.
Jong Yun Kim, William Nehrer, Jungwon Park
Filed: 1 Oct 21
Utility
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19 Dec 23
Exemplary reflective display components are described.
Robert Anthony Nordsell, Arvinder M. Chadha
Filed: 23 May 22
Utility
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19 Dec 23
An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction.
Russell Chin Yee Teo, Ludovic Godet, Nir Yahav, Robert Jan Visser
Filed: 3 May 21
Utility
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19 Dec 23
A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages.
Milan Pesic, Luca Larcher, Bastien Beltrando
Filed: 2 May 22
Utility
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19 Dec 23
A neural network is trained for use in a substrate thickness measurement system by obtaining ground truth thickness measurements of a top layer of a calibration substrate at a plurality of locations, each location at a defined position for a die being fabricated on the substrate.
Sivakumar Dhandapani, Arash Alahgholipouromrani, Dominic J. Benvegnu, Jun Qian, Kiran Lall Shrestha
Filed: 25 Jun 21
Utility
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19 Dec 23
Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber.
Leonid Dorf, Rajinder Dhindsa, James Rogers, Daniel Sang Byun, Evgeny Kamenetskiy, Yue Guo, Kartik Ramaswamy, Valentin N. Todorow, Olivier Luere
Filed: 7 May 21
Utility
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19 Dec 23
Semiconductor processing systems and methods are disclosed.
Fang Ruan, Diwakar Kedlaya
Filed: 30 Oct 20
Utility
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19 Dec 23
The present disclosure generally relates to process chambers for semiconductor processing.
Zhepeng Cong, Mostafa Baghbanzadeh, Tao Sheng, Enle Choo
Filed: 30 Nov 21
Utility
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19 Dec 23
Exemplary semiconductor chamber component cleaning systems may include a receptacle.
Katty Guyomard, Chidambara A. Ramalingam, Shawyon Jafari, Palash Joshi, Moin Ahmed Khan, Kirubanandan Naina Shanmugam, Subhaschandra Shreepad Salkod, Avishek Ghosh, David W. Groechel, Li Wu, Dorothea Buechel-Rimmel
Filed: 22 Oct 20
Utility
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19 Dec 23
Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components, including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing.
Earl Hunter, Russell Duke, Amitabh Puri, Steven M. Reedy
Filed: 19 Feb 21
Utility
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19 Dec 23
In one embodiment, a susceptor for thermal processing is provided.
Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
Filed: 23 Feb 21
Utility
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19 Dec 23
Methods for selectively depositing on metallic surfaces are disclosed.
Michael L. McSwiney, Bhaskar Jyoti Bhuyan, Mark Saly, Drew Phillips, Aaron Dangerfield, David Thompson, Kevin Kashefi, Xiangjin Xie
Filed: 21 Oct 22