28912 patents
Page 59 of 1446
Utility
Methods of Forming Semiconductor Device Structures
30 Nov 23
Methods of forming a semiconductor device structure are described.
Yu-Chen KO, Kai-Chieh YANG, Yu-Ting WEN, Ya-Yi CHENG, Min-Hsiu HUNG, Wei-Jung LIN, Chih-Wei CHANG, Ming-Hsing TSAI
Filed: 26 May 22
Utility
Gate Contact Structure
30 Nov 23
Semiconductor structures and methods of forming the same are provided.
Cheng-Chi Chuang, Huan-Chieh Su, Sheng-Tsung Wang, Lin-Yu Huang, Chih-Hao Wang
Filed: 8 Aug 23
Utility
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30 Nov 23
A method includes etching a dielectric layer to form a trench in the dielectric layer, depositing a metal layer extending into the trench, performing a nitridation process on the metal layer to convert a portion of the metal layer into a metal nitride layer, performing an oxidation process on the metal nitride layer to form a metal oxynitride layer, removing the metal oxynitride layer, and filling a metallic material into the trench using a bottom-up deposition process to form a contact plug.
Yen-Yu Chen, Chung-Liang Cheng
Filed: 31 Jul 23
Utility
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30 Nov 23
A method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form first protrusions and second protrusions, where a first diameter of each of the first protrusions is larger than a second diameter of each of the second protrusions; and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the first protrusions are disposed in the cavity.
Chi-Yuan Shih, Shih-Fen Huang, Yan-Jie Liao, Wen-Chuan Tai
Filed: 24 May 22
Utility
3bzvy4kk4tgim5q4zgst9peb
30 Nov 23
A device for forming a conductive powder includes a reaction chamber configured to receive a conductive powder precursor gas, an inert gas and a hydrogen gas.
You-Hua CHOU, Kuo-Sheng CHUANG
Filed: 9 Aug 23
Utility
pz43ei9dk8i110ytyi hkd0s0g3y3pkdm5vked5no3s743reu6n
30 Nov 23
An apparatus and a method for forming a semiconductor structure are provided.
CHUN-HSI HUANG
Filed: 26 May 22
Utility
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30 Nov 23
A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process.
Chun-Wei HSU
Filed: 9 Aug 23
Utility
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30 Nov 23
Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device.
Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
Filed: 3 Aug 23
Utility
3wtkrzpousa0tam9xki5sd8rcumk2d9hx9ljgaskcaxeguy59nnfh5q
30 Nov 23
Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface.
Chun-Wen Cheng, Chia-Hua Chu, Chun Yin Tsai, Wen Cheng Kuo
Filed: 9 Aug 23
Utility
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30 Nov 23
A method for manufacturing a semiconductor structure is provided.
YI-CHUAN TENG, CHING-KAI SHEN, JUNG-KUO TU
Filed: 27 Jul 23
Utility
67smlhyk2l8twhzyvv1vyu4mreb2xgpfnewmph 7q5ecwkly7n20mrf
30 Nov 23
The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.
CHING-KAI SHEN, YI-CHUAN TENG, WEI-CHU LIN, HUNG-WEI LIANG, JUNG-KUO TU
Filed: 27 Jul 23
Utility
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30 Nov 23
Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) package comprising a wire-bond damper.
Tsung-Lin Hsieh, Wei-Jhih Mao, Shang-Ying Tsai, Kuei-Sung Chang, Chun-Wen Cheng
Filed: 9 Aug 23
Utility
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30 Nov 23
A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die.
Kang-Yi Lien, I-Hsuan Chiu, Yi-Chieh Huang, Chia-Ming Hung, Kuan-Chi Tsai, Hsiang-Fu Chen
Filed: 9 Aug 23
Utility
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30 Nov 23
Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate.
Wen-Chuan Tai, Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu, Fan Hu
Filed: 26 May 22
Utility
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30 Nov 23
Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool.
Yi-Lin WANG, Chin-Szu LEE, Hua-Sheng CHIU, Yi-Chao CHANG, Zih-Shou MUE
Filed: 10 Aug 23
Utility
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30 Nov 23
The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber.
Ming-Yi SHEN, Hsin-Lin WU, Yao-Fong DAI, Pei-Yuan TAI, Chin-Wei CHEN, Yin-Tun CHOU, Yuan-Hsin CHI, Sheng-Yuan LIN
Filed: 8 Aug 23
Utility
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30 Nov 23
A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator.
Wen-Hao CHENG, Hsuan-Chih CHU, Yen-Yu CHEN
Filed: 10 Aug 23
Utility
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30 Nov 23
A deposition apparatus and a method are provided.
Tze-Liang Lee, Po-Hsien Cheng
Filed: 9 Aug 23
Utility
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30 Nov 23
In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.
Li-Ting Wang, Jung-Jen Chen, Ming-Hua Yu, Yee-Chia Yeo
Filed: 10 Aug 23
Utility
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30 Nov 23
A temperature sensor circuit, a control circuit, and a control method are provided.
Jaw-Juinn HORNG, Chin-Ho CHANG, Bei-Shing LIEN
Filed: 5 Jan 23