2134 patents
Page 33 of 107
Utility
Integrated circuit and power supply circuit
9 Aug 22
A power supply circuit includes an inductor, a power transistor configured to control an inductor current flowing through the inductor, and an integrated circuit driving the power transistor.
Hiroshi Maruyama, Takato Sugawara
Filed: 24 May 21
Utility
Semiconductor Device and Temperature Measurement Method
4 Aug 22
A semiconductor includes a multilayer substrate including an insulating plate and a plurality of circuit boards disposed on a top face of the insulating plate, a semiconductor element disposed on a top face of one of the plurality of circuit boards, and having a main electrode disposed on a top face thereof, and a temperature measurement device for measuring a temperature of the semiconductor element.
Shinichi MASUDA
Filed: 4 Jan 22
Utility
Semiconductor Device
4 Aug 22
A semiconductor device includes: a pad; a control circuit; a plurality of high-potential-side circuit regions having distances to the pad different from each other, each including a gate drive circuit, a SET-side level shifter, a RESET-side level shifter, and a circular wire; a SET-side wire electrically connects the pad with the SET-side level shifters; and a RESET-side wire electrically connects the pad with the RESET-side level shifters, wherein the circular wire located closer to the pad is electrically connected to the SET-side wire and the RESET-side wire via the circular wire 8u located further from the pad.
Akihiro JONISHI
Filed: 27 Dec 21
Utility
Semiconductor device having temperature sensing portions and method of manufacturing the same
2 Aug 22
A semiconductor device includes a MOS structure part and first to third temperature sensing portions.
Yasuyuki Hoshi
Filed: 31 May 20
Utility
Integrated circuit having a transistor, a diode, and a temperature sensor
2 Aug 22
A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.
Masahiro Taoka
Filed: 3 Dec 18
Utility
Semiconductor device
2 Aug 22
A semiconductor device includes an active region, a gate ring region surrounding a periphery of the active region, and a source ring region surrounding a periphery of the gate ring region.
Yasuyuki Hoshi
Filed: 3 Aug 20
Utility
Power converter
2 Aug 22
A power converter includes a housing that accommodates at least one capacitor inside the housing, a first power conversion module including at least one first positive electrode and at least one first negative electrode, a second power conversion module including at least one second positive electrode and at least one second negative electrode, a first positive electrode busbar that connects a first electrode of the capacitor to the first positive electrode, a first negative electrode busbar that connects a second electrode of the capacitor to the second negative electrode, a second positive electrode busbar that is fixed to the first positive electrode together with the first positive electrode busbar and that is fixed to the second positive electrode, and a second negative electrode busbar that is fixed to the first negative electrode and that is fixed to the second negative electrode together with the first negative electrode busbar.
Akira Ikegami
Filed: 22 Jan 21
Utility
Semiconductor Device
28 Jul 22
A semiconductor device includes n-type drift layer, n-type first current spreading layer on top surface of the drift layer, p-type base region on top surface of the first current spreading layer, p-type gate-bottom protection region inside the first current spreading layer, p-type base-bottom embedded region separated from the gate-bottom protection region and in contact with bottom surface of the base region, n-type second current spreading layer having side surface opposed to the gate-bottom protection region and in contact with side surface of the base-bottom embedded region, and insulated gate electrode structure inside trench penetrating the base region to reach the gate-bottom protection region.
Keiji OKUMURA
Filed: 23 Nov 21
Utility
Semiconductor module
26 Jul 22
A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers.
Ryoichi Kato, Yuma Murata, Naoyuki Kanai, Akito Nakagome, Yoshinari Ikeda
Filed: 26 Feb 21
Utility
Semiconductor module
26 Jul 22
A semiconductor module includes an insulating substrate having a main wiring layer, positive and negative electrode terminals adjacently arranged in a first direction, a plurality of semiconductor elements forming a first column and another plurality of semiconductor elements forming a second column, each semiconductor element having gate and source electrode on an upper surface thereof, and being disposed on the main wiring layer such that corresponding ones of the gate electrodes in the first and second columns face each other in a second direction orthogonal to the first direction, a control wiring substrate between the first and second columns and having gate and source wiring layers, a gate wiring member connecting ones of the gate electrodes in the first and second columns through the gate wiring layer, and a source wiring member connecting ones of the source electrodes in the first and second columns through the source wiring layer.
Ryoichi Kato, Yuma Murata, Naoyuki Kanai, Akito Nakagome, Yoshinari Ikeda
Filed: 26 Feb 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
21 Jul 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first semiconductor type, a first semiconductor layer of the first semiconductor type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first semiconductor type, trenches, a gate insulating film, and gate electrodes.
Shinji FUJIKAKE
Filed: 30 Nov 21
Utility
Fuel Cell System
21 Jul 22
A fuel cell system includes fuel cell stacks, each of which includes a plurality of fuel cells that are connected in series and generate electricity through an electrochemical reaction between a fuel gas and an oxidant gas, fuel cell cartridges, each of which has headers that supplies the fuel gas and the oxidant gas to the fuel cell stacks and discharges a fuel off-gas and an oxidant off-gas from the fuel cell stacks, a fuel gas supply line that supplies the fuel gas to the fuel cell cartridges, a fuel off-gas discharge line that discharges the fuel off-gas from the fuel cell cartridges, and a first adjustment member provided in the fuel gas supply line or the fuel off-gas discharge line, and adjusting a flow rate of the fuel gas or the fuel off-gas, the first adjustment member including a first flexible pipe.
Kuniyuki TAKAHASHI, Taichiro KATO
Filed: 31 Mar 22
Utility
Power conversion device
19 Jul 22
In a power conversion device, a distance between an output terminal of a first switching module and a cathode terminal of a first diode module in a first direction is arranged to be substantially equal to a distance between an output terminal of a second switching module and an anode terminal of a second diode module in the first direction.
Kohei Matsui
Filed: 8 Jun 20
Utility
Power conversion apparatus having semiconductor modules each including series-connected semiconductor switches and output terminal coupled to node connecting semiconductor switches, and output bar coupling output terminals of semiconductor modules
19 Jul 22
A power conversion apparatus includes N semiconductor modules respectively including a switch part including first and second semiconductor switches coupled in series, and an output terminal coupled to a node that connects the first and second semiconductor switches, where N is an integer greater than or equal to 3, wherein the N semiconductor modules are arranged so that the output terminals thereof are adjacent to each other.
Hong-fei Lu
Filed: 7 Oct 20
Utility
Motor driving apparatus and motor driving method
19 Jul 22
Provided is a motor driving apparatus including: an upper-arm gate driving circuit; a lower-arm gate driving circuit; a first rotation detection unit powered by a first power source; a second rotation detection unit powered by a second power source; a first fail safe circuit that performs, by use of a detection signal from the first rotation detection unit, a fail safe control on a gate driving circuit powered at least by the first power source, from among the upper-arm gate driving circuit and the lower-arm gate driving circuit; and a second fail safe circuit that performs, by use of a detection signal from the second rotation detection unit, a fail safe control on a gate driving circuit powered at least by the second power source, from among the upper-arm gate driving circuit and the lower-arm gate driving circuit.
Masaki Hirakata
Filed: 24 Aug 20
Utility
Semiconductor device and method of manufacturing semiconductor device
19 Jul 22
A semiconductor device including a diode region provided in a semiconductor substrate is provided, the diode region including a base region of a first conductivity type exposed on an upper surface of the semiconductor substrate, a cathode region of a second conductivity type exposed on a lower surface of the semiconductor substrate, an inter-cathode region of a first conductivity type exposed on the lower surface of the semiconductor substrate and alternately arranged with the cathode region in a predetermined direction, and a floating region of a second conductivity type provided above the cathode region and above the inter-cathode region.
Kazuki Kamimura, Motoyoshi Kubouchi
Filed: 19 Dec 18
Utility
Vertical Mosfet
14 Jul 22
A vertical MOSFET having a compound semiconductor layer is provided, the vertical MOSFET comprising a gate electrode, a gate insulating film provided between the gate electrode and the compound semiconductor layer, a drift region provided directly in contact with at least a part of the gate insulating film and being a part of the compound semiconductor layer, and a high resistance region provided at least in the drift region, is positioned below at least a part of the gate insulating film, and has a higher resistance value per unit length than that of the drift region.
Katsunori UENO
Filed: 30 Mar 22
Utility
Fuel Cell System and Operating Method
14 Jul 22
A fuel cell system includes an anode gas flow channel, a cathode gas flow channel, a solid oxide fuel cell to which a fuel gas from the anode gas flow channel and an air from the cathode gas flow channel are supplied to generate electricity through an electrochemical reaction between the fuel gas and the air, and a steam generator that generates a steam to be mixed with the fuel gas upon an operation of the solid oxide fuel cell being stopped.
Kouhei MURAKAMI, Kuniyuki TAKAHASHI
Filed: 31 Mar 22
Utility
Fuel Cell System
14 Jul 22
A fuel system includes a fuel cell module including a solid oxide fuel cell stack that generates electricity through an electrochemical reaction between a fuel gas and an oxidant gas, a control unit that controls the fuel cell module, a detection unit for detecting a loss of control by the control unit, and an opening and closing apparatus configured to maintain gases inside the fuel cell module or release the gases in the fuel cell module outside the fuel cell module.
Kuniyuki TAKAHASHI
Filed: 31 Mar 22
Utility
Fuel Cell System
14 Jul 22
Provided is a fuel cell system that can prevent oxidation degradation of a fuel electrode, even in the case where a control unit stops abnormally.
Kuniyuki TAKAHASHI
Filed: 31 Mar 22