2134 patents
Page 30 of 107
Utility
Cooler
13 Sep 22
A cooler of the present invention is provided with a case having a top plate, a bottom plate, and a side plate, cooling fins disposed inside the case, and a flow path for cooling fluid that comes into contact with the cooling fins and that flows through the interior of the case, the cooler cooling an object to be cooled in contact with the top plate or the bottom plate.
Ryoichi Kato, Yoshinari Ikeda, Hiromichi Gohara, Tomoyuki Miyashita, Shingo Otake
Filed: 2 Mar 20
Utility
Method for Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device
8 Sep 22
A method for manufacturing a nitride semiconductor device including: forming an N-type region in a nitride semiconductor layer; implanting ions of an acceptor element into a region under the N-type region in the nitride semiconductor layer; and forming a first P-type region under the N-type region by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element.
Ryo TANAKA, Yuki OHUCHI, Katsunori UENO, Shinya TAKASHIMA
Filed: 25 Jan 22
Utility
Assembly Jig Set and Manufacturing Method of Semiconductor Module
8 Sep 22
Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips.
Kazunaga ONISHI, Takeshi YOKOYAMA, Masaki MARUYAMA
Filed: 23 May 22
Utility
Semiconductor Module and Method of Manufacturing Semiconductor Module
8 Sep 22
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki HOZUMI
Filed: 25 May 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
8 Sep 22
At any timing after formation of gate electrodes, particle beam irradiation is performed to a semiconductor wafer having an n−-type drift region constituted by an n−-type epitaxial layer and having an n-type impurity concentration that is higher than a target majority carrier concentration (design value) of the n−-type drift region.
Yoshihito ICHIKAWA
Filed: 28 Jan 22
Utility
Insulated Gate Semiconductor Device
8 Sep 22
A semiconductor device includes: a high-concentration layer of a first conductivity-type provided on a drift layer of the first conductivity-type; a buried layer of a second conductivity-type provided in the high-concentration layer; an injection regulation region of the second conductivity-type provided on the high-concentration layer; a high-concentration region of the second conductivity-type provided inside the injection regulation region; a carrier supply region of the first conductivity-type provided at an upper part of the injection regulation region; and an insulated gate structure provided inside a trench, wherein a ratio of the impurity concentration of the injection regulation region to an impurity concentration of an upper part of the high-concentration layer is 0.5 or greater and 2 or smaller.
Takashi TSUJI
Filed: 31 Jan 22
Utility
Super Junction Silicon Carbide Semiconductor Device and Manufacturing Method Thereof
8 Sep 22
A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed.
Kensuke TAKENAKA, Takeshi TAWARA, Shinsuke HARADA
Filed: 3 Mar 22
Utility
Method for Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device
8 Sep 22
A method for manufacturing a nitride semiconductor device including: forming N-type regions in a nitride semiconductor layer; implanting ions of an acceptor element into a region sandwiched by the N-type regions in the nitride semiconductor layer; and forming a P-type region sandwiched by the N-type regions by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element.
Ryo TANAKA, Yuki OHUCHI, Katsunori UENO, Shinya TAKASHIMA
Filed: 24 Jan 22
Utility
Semiconductor Device and Method of Manufacturing the Same
8 Sep 22
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Kazumi TAKAGIWA, Hitoshi SUMIDA
Filed: 31 Jan 22
Utility
Armature, Linear Motor, Method of Manufacturing Armature
8 Sep 22
An armature includes a plurality of cores arranged in a straight line and discontinuous with each other, a plurality of coils wound around each of the cores, and a holding section configured to hold the cores.
Satoshi IMAMORI, Terukazu AKIYAMA
Filed: 24 Jan 22
Utility
Switching control circuit and power supply circuit
6 Sep 22
A switching control circuit for controlling a power supply circuit having a transformer and a transistor.
Yoshinori Kobayashi, Jian Chen
Filed: 24 Aug 20
Utility
Semiconductor device
6 Sep 22
A main semiconductor device element is a vertical MOSFET with a trench gate structure, containing silicon carbide as a semiconductor material, and having first and second p+-type regions that mitigate electric field applied to bottoms of trenches.
Yasuyuki Hoshi
Filed: 30 Mar 21
Utility
Semiconductor device
6 Sep 22
A vertical MOSFET having a trench gate structure includes an n−-type drift layer and a p-type base layer formed by epitaxial growth.
Yusuke Kobayashi, Shinsuke Harada, Takahito Kojima
Filed: 15 Dec 20
Utility
Semiconductor module and method for manufacturing the same
6 Sep 22
Provided are a semiconductor module capable of easily connecting extraction pin with a wiring board and having reliable connections, and a method for manufacturing the same.
Naoyuki Kanai, Yuichiro Hinata
Filed: 28 Apr 21
Utility
Semiconductor Device and Method for Manufacturing the Same
1 Sep 22
A semiconductor device includes a semiconductor chip, an insulated circuit board including a metal plate, an insulating plate and a circuit pattern, each of which has a rectangular shape, and a spacer part disposed on the periphery of a rear surface of the metal plate including at least one of the four corners thereof.
Yushi SATO, Yuichiro HINATA, Naoyuki KANAI
Filed: 27 Jan 22
Utility
Semiconductor Device and Manufacturing Method Thereof
1 Sep 22
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.
Yasunori AGATA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki MEGURO, Naoko KODAMA, Yoshihiro IKURA, Seiji NOGUCHI, Yuichi HARADA, Yosuke SAKURAI
Filed: 18 May 22
Utility
Semiconductor Device
1 Sep 22
Provided is a semiconductor device including a semiconductor substrate including a transistor portion and a diode portion.
Kouta YOKOYAMA, Toru AJIKI, Tohru SHIRAKAWA
Filed: 18 May 22
Utility
Cooling Apparatus and Semiconductor Module
1 Sep 22
A cooling apparatus for a semiconductor module including a semiconductor chip includes a top plate having a lower surface a bottom plate disposed to have a refrigerant circulation portion between the bottom plate and the lower surface of the top plate and a side wall configured to surround the refrigerant circulation portion.
Yuta TAMAI, Takahiro KOYAMA
Filed: 18 May 22
Utility
Semiconductor Module and Method for Manufacturing Semiconductor Module
1 Sep 22
Provided is a semiconductor module including: an insulating circuit board having a circuit pattern formed in one surface; a semiconductor chip placed in the insulating circuit board; and a wiring portion for electrically connecting the semiconductor chip and the circuit pattern.
Mai SAITO, Akihiko IWAYA, Yoko NAKAMURA, Tatsuhiko ASAI, Hiromichi GOHARA, Tsubasa WATAKABE, Narumi SATO
Filed: 17 May 22
Utility
Semiconductor Device
1 Sep 22
A semiconductor device is provided, including: a semiconductor substrate; a first-conductivity-type drift region provided in the semiconductor substrate; a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate; a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction; a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion; and a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction.
Tatsuya NAITO
Filed: 15 May 22