2134 patents
Page 26 of 107
Utility
Silicon Carbide Semiconductor Device
17 Nov 22
A silicon carbide semiconductor device including a silicon carbide semiconductor substrate.
Hiroyuki FUJISAWA, Akimasa KINOSHITA
Filed: 29 Mar 22
Utility
Power Supply Circuit and Switching Control Circuit
17 Nov 22
A power supply circuit configured to generate an output voltage at a target level from an input voltage thereof.
Masashi AKAHANE
Filed: 28 Jul 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
17 Nov 22
A type, size, and location of a crystal defect of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected from a PL image by crystal defect inspection equipment.
Yohei KAGOYAMA
Filed: 29 Mar 22
Utility
Integrated Circuit
17 Nov 22
An integrated circuit for controlling an ignition system including a coil.
Hiroshi NAKAMURA, Hiroyuki NAKAJIMA, Takanori KOHAMA, Yuya ABE
Filed: 21 Apr 22
Utility
Semiconductor module, method for manufacturing semiconductor module, and level different jig
15 Nov 22
A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base.
Kazunaga Onishi, Takashi Masuzawa, Hiromichi Gohara
Filed: 26 Mar 20
Utility
Method of manufacturing semiconductor integrated circuit
15 Nov 22
A method of manufacturing a semiconductor integrated circuit includes forming a body region having a second conductivity type in an upper portion of a support layer having a first conductivity type and forming a well region having a second conductivity type in an upper portion of the support layer.
Yoshiaki Toyoda
Filed: 5 Jan 21
Utility
Testing apparatus, testing method, and manufacturing method
15 Nov 22
Provided is a testing apparatus for testing a semiconductor device including a first main terminal to which a first power source voltage is applied and a second main terminal to which a second power source voltage is applied, comprising: a condition setting unit for setting a changing speed of a terminal voltage of the first main terminal at turn-off of the device; an operation controlling unit for turning off the device under a condition set by the condition setting unit; and a determining unit for screening the device based on an operation result of the device, wherein: a time waveform of the terminal voltage at turn-off of the device includes a maximum changing point where a changing speed becomes maximum; and the condition setting unit sets the changing speed at a first set voltage higher than a voltage at the maximum changing point, to a predetermined value.
Tetsutaro Imagawa
Filed: 24 Jun 21
Utility
Short-circuit determining apparatus, switch apparatus and short-circuit determining method
15 Nov 22
Provided is a short-circuit determining apparatus comprising: a sensor configured to detect a time change of a main current flowing between a first main terminal and a second main terminal of a switching device having a control terminal, the first main terminal and the second main terminal; an integration unit configured to integrate an output of the sensor; a polarity determining unit configured to determine a polarity of the output of the sensor; and a short-circuit determining unit configured to determine a short-circuit of the switching device, based on a comparison result of an output of the integration unit and a short-circuit determination reference value according to a determination result of the polarity.
Ryoga Kiguchi, Kunio Matsubara
Filed: 25 May 21
Utility
Driver circuit and semiconductor device
15 Nov 22
Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line.
Sho Nakagawa, Morio Iwamizu
Filed: 28 Jul 20
Utility
Corrosion Monitoring Device
10 Nov 22
Provided is a corrosive environment monitoring device capable of monitoring the condition of a turbine for a long period of time without corrosion damage to a sensor caused by turbine steam.
Yohsuke ABE, Sakae IZUMI, Yoshihiro SAKAI
Filed: 26 Jul 22
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
3 Nov 22
A semiconductor device has transistor portions and diode portions.
Kazuki KAMIMURA, Motoyoshi KUBOUCHI
Filed: 11 Jul 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
3 Nov 22
Provided is a semiconductor device including a drift region, a base region, two trench portions and a mesa portion, wherein at least one of the two trench portions is a gate trench portion, the mesa portion includes: a first conductivity type emitter region provided to be exposed on an upper surface of the mesa portion; a second conductivity type contact region provided to be exposed on the upper surface of the mesa portion alternately with the emitter region in an extending direction; and a second conductivity type connecting region with a higher doping concentration than the base region, wherein the connecting region is provided to overlap with the emitter region in a top view, is arranged apart from the gate trench portion, is arranged below the upper surface of the mesa portion, and connects two of the contact regions sandwiching the emitter region in the extending direction.
Yuki KARAMOTO
Filed: 15 Jul 22
Utility
Semiconductor Device
3 Nov 22
A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.
Masahiro TAOKA
Filed: 19 Jul 22
Utility
Semiconductor device
1 Nov 22
Provided is a semiconductor device, comprising: a semiconductor substrate; a transistor portion including an emitter region on the top of the semiconductor substrate; a diode portion including a cathode region on the bottom of the semiconductor substrate and a second conductivity type overlap region in a region other than the cathode region and arranged alongside to the transistor portion a preset arrangement direction on the top of the semiconductor substrate; and an interlayer dielectric film provided between the semiconductor substrate and an emitter electrode and including a contact hole for connecting the emitter electrode and the diode portion.
Yosuke Sakurai, Seiji Noguchi, Toru Ajiki
Filed: 26 Jan 21
Utility
Semiconductor device
1 Nov 22
A semiconductor device includes a semiconductor substrate of a first conductivity type, having an active portion and a gate pad portion; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of a second conductivity type.
Keiji Okumura
Filed: 19 Apr 21
Utility
Semiconductor Device
27 Oct 22
A FLR structure is provided in an edge termination region as a voltage withstanding structure.
Yasuyuki HOSHI, Tomohiro MORIYA
Filed: 28 Feb 22
Utility
Manufacturing Method of Semiconductor Apparatus
27 Oct 22
Provided is a manufacturing method of semiconductor apparatus comprising a semiconductor substrate, the method comprising: grinding a first surface of the semiconductor substrate to form an outer peripheral surplus region on an outer periphery of the semiconductor substrate; and spin etching the first surface of the semiconductor substrate by a chemical liquid, and wherein after the grinding, in a region of the semiconductor substrate which is closer to an inner side than the outer peripheral surplus region, a thickness of the semiconductor substrate in an end portion of the region is greater than a thickness of the semiconductor substrate in a center portion of the region.
Michiya KITANO
Filed: 23 Feb 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
27 Oct 22
In an edge termination region, a FLR structure configured by FLRs having a floating potential and surrounding concentrically a periphery of an active region is provided.
Akimasa KINOSHITA
Filed: 28 Feb 22
Utility
Semiconductor Apparatus and Method of Manufacturing Semiconductor Apparatus
27 Oct 22
A resin enclosure includes: an inner wall portion from a wall surface defining the space to a side surface of the lead terminal close to the space; and a covering portion that covers at least a part of a top surface of a first portion of the lead terminal.
Naoki SAEGUSA
Filed: 25 Feb 22
Utility
Semiconductor Module
20 Oct 22
A semiconductor module includes a laminated substrate including an insulating board and a plurality of circuit boards that are arranged on an upper face of the insulating board, the plurality of circuit boards including first and second circuit boards, a semiconductor element disposed on the first circuit board and including, on an upper face of the semiconductor element, a main electrode, a gate pad, and a gate runner electrically connected to the gate pad, and a first wiring member electrically connecting the main electrode to the second circuit board.
Akio YAMANO
Filed: 30 Jun 22