2134 patents
Page 27 of 107
Utility
Analyzing Apparatus, Analysis Method, and Computer-readable Medium
20 Oct 22
Provided is an analyzing apparatus including a charge amount analyzing unit configured to analyze, by using a device simulator configured to simulate a transient change of a charge in a semiconductor device having a first main terminal and a second main terminal, a change of a charge amount at any one of the terminals when a power source voltage applied between the first main terminal and the second main terminal is changed by a displacement voltage smaller than an initial voltage after a current flowing between the first main terminal and the second main terminal is stabilized with the semiconductor device being set to an ON state and the power source voltage being set to the initial voltage, and a capacitance calculating unit configured to compute a terminal capacitance at any one of the terminals based on the change of the charge amount analyzed by the charge amount analyzing unit.
Norihiro KOMIYAMA, Masahiro SASAKI, Yuichi ONOZAWA, Shoji YAMADA
Filed: 22 Mar 22
Utility
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
20 Oct 22
A silicon carbide semiconductor device includes an n-type drift layer disposed on an n-type silicon carbide substrate; an n-type current spreading layer disposed on a top surface of the drift layer, having a higher impurity concentration than the drift layer; a p-type base region disposed on a top surface of the current spreading layer; a p-type gate-bottom protection region located in the current spreading layer; a p-type base-bottom embedded region located in the current spreading layer, separated from the gate-bottom protection region to be in contact with a bottom surface of the base region; an insulated-gate electrode structure disposed in a trench penetrating the base region to reach the gate-bottom protection region, and a lower recombination region disposed in a lower portion of the drift layer, including crystal defects configured to recombine minority carriers injected into the drift layer.
Keishirou KUMADA
Filed: 24 Feb 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device
20 Oct 22
Types, sizes, and locations of crystal defects of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected.
Hidetatsu NAKAMURA
Filed: 25 Feb 22
Utility
Beverage supplying apparatus
18 Oct 22
A beverage supplying apparatus that supplies a beverage into a beverage container, includes: an ingredient storage unit to store a beverage ingredient; a compressed gas supplying means to supply compressed gas to the ingredient storage unit and pressurize the beverage ingredient; and a beverage supplying means to, when receiving a supply command, allow the pressurized beverage ingredient to be supplied to a nozzle, and supply compressed nitrogen gas to the nozzle, so that the nitrogen gas and the beverage ingredient are mixed and stirred at the nozzle and the beverage is discharged to the beverage container through the nozzle.
Masami Hashimoto
Filed: 24 Jan 19
Utility
Semiconductor device
18 Oct 22
A semiconductor device including a semiconductor substrate, first and second transistor sections and a diode section provided on the substrate, is provided.
Tatsuya Naito
Filed: 24 Feb 20
Utility
Information processing apparatus and method
18 Oct 22
An information processing apparatus includes a processor that acquires an operation result on an input data by referring to a look-up table that stores an operation result of an operation process, including an obfuscating operation that includes ordering of bits, an exclusive-OR operation on a random number, and a multiplication on a Galois field, performed on data.
Kenji Takatsukasa
Filed: 24 Aug 20
Utility
Information processing apparatus and information processing method
18 Oct 22
An information processing apparatus includes a memory, and a processor coupled to the memory and configured to generate, from a common key used for symmetric key cryptography, and from either an encryption process using the common key or a decryption process using the common key, an encryption lookup table corresponding to the encryption process or a decryption lookup table corresponding to the decryption process by using white box cryptography, and disseminate the generated encryption lookup table or the generated decryption lookup table as a public key.
Kenji Takatsukasa
Filed: 29 Jul 20
Utility
Semiconductor Device and Method of Manufacturing the Same
13 Oct 22
A semiconductor device includes a semiconductor chip, an insulated circuit substrate including an insulating board and a circuit pattern on the insulating board electrically connected to the semiconductor chip, and a wiring member having a leg portion bonded to the circuit pattern.
Taichi ITOH
Filed: 30 Jun 22
Utility
Magnetic Component and Power Converter
13 Oct 22
A core includes a first core part, a second core part, and a spacer.
Akihiro HINO
Filed: 23 Feb 22
Utility
Semiconductor Module and Semiconductor Apparatus
13 Oct 22
A semiconductor module includes: a first power semiconductor element that includes a first main current electrode; a main body that accommodates therein the first power semiconductor element; and a first main current terminal connectable to the first main current electrode.
Yushi SATO
Filed: 22 Feb 22
Utility
Semiconductor Device and Manufacturing Method
13 Oct 22
Provided is a semiconductor device provided with an IGBT, comprising: a semiconductor substrate having upper and lower surfaces, throughout which bulk donors are distributed; a hydrogen peak including a local maximum arranged 25 μm or more away from the lower surface of the semiconductor substrate in a depth direction, at which a hydrogen chemical concentration shows a local maximum value; an upper tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the upper surface; and a lower tail where the hydrogen chemical concentration decreases in a direction from the local maximum toward the lower surface more gradually than the upper tail; and a first high concentration region having a donor concentration higher than a bulk donor concentration and including a region extending for 4 μm or more in a direction from the local maximum of the hydrogen peak toward the upper surface.
Yosuke SAKURAI, Seiji NOGUCHI, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki UCHIDA
Filed: 24 Mar 22
Utility
Semiconductor Device and Semiconductor Chip
13 Oct 22
A semiconductor device includes a first semiconductor chip including a plurality of first control electrodes, each of which is disposed at a respective one of corner portions on a first front surface thereof, a first output electrode disposed on the first front surface, and a first input electrode disposed on a first rear surface thereof, a second semiconductor chip including a plurality of second control electrodes, each of which is disposed at a respective one of corner portions on a second front surface thereof, a second output electrode disposed on the second front surface, and a second input electrode disposed on a second rear surface thereof, the second semiconductor chip being disposed adjacent to the first semiconductor chip, and a first connection wire which connects one of the first control electrodes and one of the second control electrodes.
Akio YAMANO
Filed: 29 Jun 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.
Misaki TAKAHASHI, Yuichi HARADA, Kouta YOKOYAMA
Filed: 23 Jun 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device in which a lifetime control region including a lifetime killer is provided, below a base region, from at least a part of a transistor portion to a diode portion, the transistor portion includes: a main region spaced apart from the diode portion in a top view; a boundary region located between the main region and the diode portion and overlapping the lifetime control region in a top view; and a plurality of gate trench portions provided from an upper surface of the semiconductor substrate to a drift region through the base region, the plurality of gate trench portions include: a first gate trench portion provided in the main region; and a second gate trench portion provided in the boundary region, and a signal transmission timing of the first gate trench portion is different from a signal transmission timing of the second gate trench portion.
Motoyoshi KUBOUCHI
Filed: 23 Feb 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device including a gate trench portion and a dummy trench portion adjacent to the gate trench portion.
Kaname MITSUZUKA, Yuki KARAMOTO
Filed: 23 Jun 22
Utility
Semiconductor Device
13 Oct 22
Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion.
Shigeki SATO, Soichi YOSHIDA, Kouji ASAHI, Seiji MOMOTA
Filed: 24 Feb 22
Utility
Semiconductor device
11 Oct 22
A semiconductor device includes a collector layer of a first conductive type, a drift layer of a second conductive type, an accumulation region of the second conductive type, a base region of the first conductive type, emitter regions of the second conductive type, a first gate electrode in contact with the emitter regions via first gate insulating film, a second gate electrode facing the first gate electrode via the base region, and being in contact with the emitter regions via second gate insulating film, a first resistive section electrically connected to the first gate electrode, a second resistive section having a larger resistance than does the first resistive section, and electrically connected to the second gate electrode, and a gate electrode pad electrically connected to the first and second resistive sections.
Yoshihiro Ikura
Filed: 21 Apr 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
11 Oct 22
A semiconductor device includes a semiconductor device provided on a semiconductor substrate and an ohmic electrode provided on a back surface of the semiconductor device and containing a nickel silicide and a molybdenum carbide, or the nickel silicide and a titanium carbide.
Makoto Utsumi, Masaki Miyazato
Filed: 30 Nov 20
Utility
Superjunction semiconductor device having parallel PN structure with column structure and method of manufacturing the same
11 Oct 22
A semiconductor device has an active region through which current passes and an edge termination structure region.
Takeyoshi Nishimura, Ryo Maeta, Isamu Sugai
Filed: 31 Mar 20
Utility
Drive circuit, drive method, and semiconductor system
11 Oct 22
A drive circuit includes: a control section generating a control signal; a first level shift section raising a level of a signal from the control section; a high side drive section controlling a semiconductor device; and a second level shift section lowering a level of a signal from the high side drive section for input to the control section.
Masashi Akahane
Filed: 27 Oct 21