2134 patents
Page 25 of 107
Utility
Method of manufacturing silicon carbide semiconductor device, method of manufacturing silicon carbide substrate, and silicon carbide substrate
29 Nov 22
A method of manufacturing a silicon carbide substrate having a parallel pn layer.
Yasuyuki Kawada
Filed: 23 Oct 20
Utility
Semiconductor device
29 Nov 22
A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern.
Mitsuhiro Kakefu, Hiroaki Ichikawa
Filed: 27 Aug 20
Utility
Scrubber Device
24 Nov 22
There is provided a scrubber device including: a reaction tower in which an internal space is formed; a liquid spray unit configured to spray a liquid in the internal space; a gas inlet port configured to introduce a gas to the reaction tower; a liquid outlet port configured to discharge, from the reaction tower, drainage generated by treatment of taking, into the liquid, a substance in the gas; a gas supply unit configured to supply the treated gas from the reaction tower; and a heating unit which is provided in at least a part of a portion close to the liquid outlet port with respect to the gas inlet port in the reaction tower, and a portion of a liquid outlet tube that is connected downstream from the liquid outlet port, and which is configured to heat the drainage.
Taichiro KATO
Filed: 5 May 22
Utility
Semiconductor Device
24 Nov 22
A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded.
Yuhei NISHIDA
Filed: 17 May 22
Utility
Scrubber Apparatus for Geothermal Power Generation
24 Nov 22
Provided is a scrubber apparatus for geothermal power generation configured to treat gas from geothermal power generation equipment to supply a power generation apparatus with the treated gas.
Kuniyuki TAKAHASHI, Taichiro KATO
Filed: 5 May 22
Utility
Semiconductor Device
24 Nov 22
A semiconductor device, including a sealing body portion, a nut and a bus bar.
Norihiro DAICHO, Fumihiko MOMOSE
Filed: 18 Apr 22
Utility
Semiconductor Device
24 Nov 22
A semiconductor device includes a semiconductor substrate including an active region and an outer peripheral region.
Motoyoshi KUBOUCHI
Filed: 22 Mar 22
Utility
Silicon Carbide Semiconductor Device
24 Nov 22
A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, first electrodes, a second electrode, and a gate pad portion configured by a gate electrode pad and a connecting portion.
Shingo HAYASHI, Akimasa KINOSHITA
Filed: 28 Mar 22
Utility
Semiconductor Module
24 Nov 22
Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.
Yasufumi HARA
Filed: 22 Mar 22
Utility
Cooling Apparatus and Semiconductor Apparatus with Cooling Apparatus
24 Nov 22
A cooling apparatus includes: a first member including a first surface in contact with a cooling target, a second surface opposite to the first surface, and radiating fins protruding from the second surface; and a second member including a third surface facing the second surface, a refrigerant flows between the first member and the second member, the second member includes a first protrusion protruding from the third surface toward a space, the space existing between the radiating fins in a flow direction of the refrigerant, the first protrusion includes a first slope inclined to the third surface, the first slope includes a first end and a second end, the first end is closer to the second surface than the second end, the second end is closer to the third surface than the first end, the first end is positioned downstream in the flow direction from the second end.
Ginji UCHIBE
Filed: 22 Mar 22
Utility
Power Supply Circuit and Power Supply Device
24 Nov 22
A power supply circuit of a step-down type, configured to generate an output voltage at a predetermined level from an alternating current (AC) voltage.
Yoshinori KOBAYASHI, Masayuki YAMADAYA, Hironobu SHIROYAMA, Toshimitsu MORIMOTO
Filed: 24 Mar 22
Utility
Electrophotographic photoreceptor, method of manufacturing the photoreceptor, and electrophotographic device
22 Nov 22
Shinjiro Suzuki, Tomoki Hasegawa, Fengqiang Zhu
Filed: 4 Jan 21
Utility
Semiconductor device having IGBT and diode with field stop layer formed of hydrogen donor and helium
22 Nov 22
Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side.
Kouji Mukai, Souichi Yoshida
Filed: 15 Oct 20
Utility
Power control apparatus and power control method with oscillation control
22 Nov 22
Recently, it is desired to improve responsiveness in case where a drop in the output voltage is prevented.
Nobuyuki Hiasa
Filed: 24 Aug 20
Utility
Evaluation method, estimation method, evaluation apparatus, and combined evaluation apparatus
22 Nov 22
The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated.
Miwako Fujita, Michio Tamate, Tamiko Asano, Yuhei Suzuki, Ryu Araki
Filed: 25 Nov 19
Utility
Finned Tube Heat Exchanger
17 Nov 22
A finned tube heat exchanger includes a plurality of tube arrays, each of which includes a plurality of heat transfer tubes that each extend parallel to one another and are disposed at a predetermined pitch in a first direction that intersects a flow direction of heat exchanging air, in a second direction that intersects the first direction, any closest two of the plurality of tube arrays having a predetermined distance therebetween.
Masaaki AJIMA, Masamichi IWASAKI, Jun NAKAMURA, Yasuhiro YOKOYAMA
Filed: 28 Jul 22
Utility
Pressure Sensor Apparatus
17 Nov 22
Provided is a pressure sensor apparatus, including: a pressure sensor unit; a case configured to house the pressure sensor unit; and a plurality of lead terminals configured to be exposed toward outside of of the case, wherein the plurality of lead terminals include a first terminal, a second terminal, and a ground terminal; and the ground terminal, the first terminal and the second terminal are arranged in an order of the ground terminal, the first terminal, and the second terminal outside the case.
Hiroto KIKUCHI, Kazuhiro MATSUNAMI, Kimihiro ASHINO
Filed: 26 Apr 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device
17 Nov 22
A method of manufacturing a silicon carbide semiconductor device.
Hidetatsu NAKAMURA, Keiji OKUMURA, Yoshikuni FUJIMOTO
Filed: 25 Mar 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device
17 Nov 22
A method of manufacturing a silicon carbide semiconductor device.
Hidetatsu NAKAMURA, Keiji OKUMURA, Yoshikuni FUJIMOTO
Filed: 29 Mar 22
Utility
Semiconductor Device
17 Nov 22
A semiconductor device, including an insulated circuit substrate that has a base plate, a resin layer disposed on a front surface of the base plate, and a circuit pattern disposed on a front surface of the resin layer; and a semiconductor chip that is rectangular in a plan view of the semiconductor device and is bonded to a front surface of the circuit pattern in such a manner that a side edge of the semiconductor chip is spaced inwardly from an outer peripheral edge of the circuit pattern by at least a predetermined distance.
Makoto ISOZAKI
Filed: 28 Jul 22