2134 patents
Page 21 of 107
Utility
Neutron Detector, Personal Dosemeter and Neutron Fluence Monitor Including This Detector and Neutron Detection Method
2 Feb 23
A neutron detector having high sensitivity of detection for low energy neutrons is provided.
Kei AOYAMA, Yohei ABE, Tomoya NUNOMIYA, Masataka NARITA, Takashi NAKAMURA
Filed: 25 May 22
Utility
Semiconductor Device
2 Feb 23
A semiconductor device, including a semiconductor substrate having a diode portion, wherein the diode portion includes: an anode region which is provided on a front surface of the semiconductor substrate and is of a second conductivity type; a trench portion provided so as to extend in a predetermined extending direction on the front surface of the semiconductor substrate; a trench contact portion provided on the front surface of the semiconductor substrate; and a plug region which is provided at a lower end of the trench contact portion and is of a second conductivity type, and which has a doping concentration higher than that of the anode region, wherein a plurality of plug regions, each of which being the plug region, is provided separately from each other along the extending direction, is provided.
Toshiyuki MATSUI, Tatsuya NAITO, Kazuki KAMIMURA
Filed: 17 May 22
Utility
Semiconductor device
31 Jan 23
A semiconductor device is provided.
Takahiro Tamura, Yuichi Onozawa, Misaki Takahashi
Filed: 18 Nov 21
Utility
Semiconductor device
31 Jan 23
A main semiconductor device element has first and second p+-type high-concentration regions that mitigate electric field applied to bottoms of trenches.
Yasuyuki Hoshi
Filed: 28 Apr 21
Utility
Semiconductor device
31 Jan 23
Semiconductor device including first semiconductor layer of a first conductivity type, second semiconductor layer of a second conductivity type at a surface of the first semiconductor layer, third semiconductor layer of the first conductivity type selectively provided at a surface of the second layer, and gate electrode embedded in a trench via a gate insulating film.
Makoto Shimosawa
Filed: 10 Dec 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
31 Jan 23
First p+-type regions are provided directly beneath trenches, separate from a p-type base region and facing bottoms of the trenches in a depth direction.
Akimasa Kinoshita
Filed: 3 Aug 20
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
26 Jan 23
Provided is a semiconductor device including: a semiconductor substrate provided with an active portion and an edge termination structure portion surrounding the active portion; an interlayer dielectric film provided above the semiconductor substrate; a protective film provided above the interlayer dielectric film; and a protruding portion provided farther from the active portion than the edge termination structure portion and protruding further than the interlayer dielectric film.
Tsuneyuki MATSUSHIMA, Kazuhiro KITAHARA, Naoko KODAMA
Filed: 17 May 22
Utility
Control Circuit and Switching Power Source
26 Jan 23
Provided is a control circuit configured to control a switching element of a switching power source, the control circuit comprising: a first protection unit configured to stop a principal current flowing through the switching element when the principal current of the switching element has exceeded a first threshold value; and a second protection unit configured to stop the principal current of the switching element over a longer time period than the first protection unit when the principal current has exceeded a second threshold value larger than the first threshold value.
Hiroshi MARUYAMA
Filed: 17 May 22
Utility
Semiconductor device and manufacturing method thereof
24 Jan 23
A semiconductor device, including a semiconductor module, a positioning member and a printed board.
Tadahiko Sato
Filed: 25 Mar 21
Utility
Semiconductor integrated circuit
24 Jan 23
A semiconductor integrated circuit includes a high-potential-side circuit region, a high-voltage junction termination structure surrounding the high-potential-side circuit region, and a low-potential-side circuit region surrounding the high-potential-side circuit region via the high-voltage junction termination structure which are integrated into a single chip, and wherein a first distance between a looped well region and a buried layer in a region in which a first contact region is formed is smaller than a second distance between the looped well region and the buried layer in a region in which a carrier reception region is formed.
Masaharu Yamaji
Filed: 9 Mar 20
Utility
Switching control circuit and power supply circuit
24 Jan 23
A switching control circuit for controlling switching of a transistor in a power supply circuit, such that the power supply circuit generates an output voltage at a target level.
Shinji Matsumoto
Filed: 23 Oct 20
Utility
Control Apparatus and Switching Apparatus
19 Jan 23
Provided is a control apparatus including a sensing unit configured to output a short circuit sensing signal in response to sensing, in a turn-on period of a main switching device by a switching device for on control, of short circuit of the main switching device, a protection operation control unit configured to output an instruction signal of a short circuit protection operation at delayed timing relative to the short circuit sensing signal, and a protection unit configured to turn off the switching device for on control in response to the instruction signal, in which the protection operation control unit outputs the instruction signal in response to continuation of the short circuit sensing signal beyond a first reference time period.
Takahiro MORI
Filed: 18 May 22
Utility
Semiconductor Device
19 Jan 23
A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member.
Rikihiro MARUYAMA, Norihiro KOMIYAMA, Kunio KOBAYASHI, Yuto KOBAYASHI, Takahito HARADA, Hirohisa OYAMA, Masahiro SASAKI, Ryousuke USUI
Filed: 31 May 22
Utility
Power Conversion Device
19 Jan 23
A power conversion device includes a filter circuit unit between a power conversion unit and a smoothing capacitor for smoothing a pulsating flow accompanying power conversion in the power conversion unit to absorb at least a part of a high-frequency component of the pulsating flow.
Naoki MUKAIYAMA, Hiroki KATSUMATA
Filed: 20 Sep 22
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
19 Jan 23
A process of forming a gate insulating film in a silicon carbide semiconductor device.
Yu KURIOKA
Filed: 31 May 22
Utility
Semiconductor Device
19 Jan 23
Provided is a semiconductor device including: an active portion provided thereon; a plurality of trench portions each including a gate conductive portion and arranged in a array direction while extending in a extending direction in the active portion, a conductive portion shape ratio of a trench length to a width of the gate conductive portion array direction being 1,000 or more; a first control pad protruding toward an inner side of the semiconductor substrate from a first outer peripheral side of the semiconductor substrate in a top view; and a first well region provided below the first control pad and to cover the first control pad in the top view, in which a shortest distance between the first well region and a trench center position as a center of a length of the plurality of trench portions in the extending direction in the top view is 1,000 μm or more.
Tomoyuki OBATA
Filed: 20 Sep 22
Utility
Control Device, Motor Driving Apparatus, and Motor Driving System
19 Jan 23
A control device includes a control circuit configured to control an inverter circuit that drives a motor by a plurality of switching elements coupled between DC buses, a first power supply system using a voltage source different from the DC buses as a power supply, a second power supply system using the DC buses as a power supply, and a switching circuit configured to switch a power supply system that supplies power to the control circuit from the first power supply system to the second power supply system when an abnormality in the first power supply system is detected.
Masaki HIRAKATA
Filed: 25 May 22
Utility
Contact to silicon carbide semiconductor device
17 Jan 23
In a silicon carbide semiconductor device in which a contact electrode is formed on a single-crystal silicon carbide semiconductor substrate, a barrier metal (titanium nitride layer) covers an interlayer insulating film in a region other than a contact hole, and a contact electrode of a predetermined electrode material is formed only in a region on the silicon carbide semiconductor substrate in the contact hole opened in the interlayer insulating film on the silicon carbide semiconductor substrate.
Masahide Gotoh
Filed: 11 Dec 19
Utility
Integrated Circuit and Power Supply Circuit
12 Jan 23
An integrated circuit for a power supply circuit including a transformer having a primary coil, a secondary coil, and an auxiliary coil, and a transistor configured to control a current flowing through the primary coil.
Jun YABUZAKI
Filed: 25 May 22
Utility
Integrated Circuit and Power Supply Circuit
12 Jan 23
An integrated circuit for a power supply circuit that includes a transformer including a primary coil, a secondary coil, and an auxiliary coil, and a transistor controlling a current flowing through the primary coil.
Jun YABUZAKI
Filed: 25 May 22