2134 patents
Page 20 of 107
Utility
Switching apparatus and switching method
14 Feb 23
Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.
Harunobu Ikeda
Filed: 25 Nov 21
Utility
Current detection circuit, current detection method, and semiconductor module
14 Feb 23
There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.
Kazumi Takagiwa
Filed: 30 Jun 20
Utility
Semiconductor module and vehicle
14 Feb 23
A semiconductor module includes a semiconductor device, and a cooling device.
Takafumi Yamada, Hiromichi Gohara, Daiki Yoshida
Filed: 28 Jul 20
Utility
Uninterruptible Power Supply Device
9 Feb 23
This uninterruptible power supply device includes an input module provided with a plurality of conductor wires having a plate shape including at least a plurality of AC input wires, and an uninterruptible power supply module.
Takahiro KINUTA
Filed: 24 Oct 22
Utility
Semiconductor Device and Method of Manufacturing the Same
9 Feb 23
A method of manufacturing a semiconductor device, the method including: preparing an insulated circuit substrate including a conductive plate; partially fixing a plate-like bonding member onto the conductive plate so as to make a positioning of the bonding member in a horizontal direction; mounting a semiconductor chip on the bonding member; and heating and melting the bonding member so as to form a bonding layer for bonding the insulated circuit substrate and the semiconductor chip each other.
Yuji IIZUKA
Filed: 29 Jun 22
Utility
Semiconductor Device
9 Feb 23
Provided is a semiconductor device, comprising: a semiconductor substrate; a transistor portion including an emitter region on the top of the semiconductor substrate; a diode portion including a cathode region on the bottom of the semiconductor substrate and a second conductivity type overlap region in a region other than the cathode region and arranged alongside to the transistor portion a preset arrangement direction on the top of the semiconductor substrate; and an interlayer dielectric film provided between the semiconductor substrate and an emitter electrode and including a contact hole for connecting the emitter electrode and the diode portion.
Yosuke SAKURAI, Seiji NOGUCHI, Toru AJIKI
Filed: 21 Oct 22
Utility
Steam Turbine Member
9 Feb 23
A steam turbine member has suppressed adhesion of scale for a long time without deterioration of corrosion resistance and the like of a turbine.
Yuya NAKASHIMA, Masato HIROTA, Naoya YOSHIMI
Filed: 25 Oct 22
Utility
Semiconductor Device Manufacturing Method
9 Feb 23
Provided is a semiconductor device manufacturing method comprising: forming an impurity region including a first impurity on a semiconductor wafer; annealing the semiconductor wafer in a state where a lower surface of the semiconductor wafer is supported; and removing at least a part of the impurity region by removing a region including the lower surface of the semiconductor wafer.
Masayuki MOMOSE
Filed: 21 Jun 22
Utility
Semiconductor Device
9 Feb 23
Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region.
Yuichi HARADA, Seiji NOGUCHI, Norihiro KOMIYAMA, Yoshihiro IKURA, Yosuke SAKURAI, Yoshihisa SUZUKI
Filed: 23 Oct 22
Utility
Semiconductor Device and Fabrication Method for Semiconductor Device
9 Feb 23
A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.
Motoyoshi KUBOUCHI, Kosuke YOSHIDA, Soichi YOSHIDA, Koh YOSHIKAWA, Nao SUGANUMA
Filed: 5 Sep 22
Utility
Semiconductor Device
9 Feb 23
Provided is a semiconductor device including: a buffer region having a doping concentration higher than a bulk donor concentration; a first low-concentration hydrogen peak in the buffer region; a second low-concentration hydrogen peak in the buffer region closer to a lower surface than the first low-concentration hydrogen peak; a high-concentration hydrogen peak in the buffer region closer to the lower surface than the second low-concentration hydrogen peak, the high-concentration hydrogen peak having a hydrogen chemical concentration higher than that of the second low-concentration hydrogen peak; and a flat region including a region between the two low-concentration hydrogen peaks and a region including the second low-concentration hydrogen peak, and having a doping concentration higher than a bulk donor concentration, an average value of the doping concentration being equal to or smaller than a local minimum value of a doping concentration between the second low-concentration hydrogen peak and the high-concentration hydrogen peak.
Misaki UCHIDA, Takashi YOSHIMURA, Hiroshi TAKISHITA, Shuntaro YAGUCHI, Seiji NOGUCHI, Yosuke SAKURAI
Filed: 20 Oct 22
Utility
Semiconductor Apparatus and Method for Manufacturing Semiconductor Apparatus
9 Feb 23
Provided is a semiconductor apparatus, wherein a doping concentration distribution in the buffer region has a deepest slope where a doping concentration monotonically decreases to a position where it comes in contact with the drift region in a direction from the lower surface of the semiconductor substrate toward an upper surface, a hydrogen chemical concentration distribution in the buffer region includes in a first depth range provided with the slope: a first decrease portion where a hydrogen chemical concentration decreases toward the upper surface side; a second decrease portion located closer to the upper surface side than the first decrease portion is and where the chemical concentration decreases; and an intermediate portion arranged between the first and second decrease portions, and the intermediate portion has: a flat portion where the distribution is uniform; a peak in a slope of the chemical concentration; or a kink portion of the chemical concentration.
Shuntaro YAGUCHI, Takashi YOSHIMURA, Hiroshi TAKISHITA, Misaki UCHIDA
Filed: 20 Oct 22
Utility
Semiconductor Module
9 Feb 23
Provided is a semiconductor module including a main circuit portion, a plurality of circuit electrodes, a plurality of main terminals, and a plurality of wires, in each of semiconductor chips, transistor portions and diode portions have a longitudinal side in a second direction, each of semiconductor chips has a plurality of end sides including a gate-side end side, each of the gate-side end sides is arranged facing a same side in a top view, the plurality of main terminals are arranged on a same side in relation to the main circuit portion so as not to sandwich the main circuit portion in a top view, each of the plurality of wires has a bonding portion, and a longitudinal direction of the bonding portion has an angle in relation to the second direction.
Tomofumi OOSE
Filed: 26 Oct 22
Utility
Uninterruptible Power Supply Apparatus and Control Device for Uninterruptible Power Supply Apparatus
9 Feb 23
This uninterruptible power supply apparatus includes an uninterruptible power supply module, an input module, and a control module that is disposed in a left-right direction of the input module.
Takahiro KINUTA
Filed: 24 Oct 22
Utility
Semiconductor device and method of manufacturing semiconductor device
7 Feb 23
In a contact hole of an interlayer insulating film, a tungsten film forming a contact plug is embedded via a barrier metal.
Takaaki Suzawa
Filed: 7 Oct 21
Utility
Mounting structure for heater element, method for mounting heater element, and power conversion device
7 Feb 23
A mounting structure for a heater element includes a heater element having a surface to be cooled, a board on which the heater element is mounted, a cooling member that cools the surface to be cooled of the heater element mounted on the board, and a supporting member temporarily fixed to the board, the supporting member temporarily fixing the heater element.
Shun Fukuchi
Filed: 22 Mar 21
Utility
Semiconductor device
7 Feb 23
Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.
Tohru Shirakawa, Yasunori Agata, Kaname Mitsuzuka
Filed: 25 May 21
Utility
Semiconductor device
7 Feb 23
A semiconductor device includes a first MOS structure portion that includes, as its elements, a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first second-semiconductor-layer of a second conductivity type, first semiconductor regions of the first conductivity type, and first gate insulating films, and a second MOS structure portion that includes, as its elements, the substrate, the first semiconductor layer, a second second-semiconductor-layer, second first-semiconductor-regions of the first conductivity type, and second gate insulating films.
Yasuyuki Hoshi
Filed: 29 Jan 21
Utility
Semiconductor device
7 Feb 23
A semiconductor device including a plurality of power modules each of which includes a power semiconductor switching element that has a temperature detection diode, and a drive circuit that has an output circuit for switching on and off the power semiconductor switching element, and that outputs a warning signal for calling attention if the value of the forward voltage of the temperature detection diode becomes equal to or smaller than a first reference voltage value, and that outputs a protection operation signal for stopping the on/off operation of the power semiconductor switching element if the value of the forward voltage becomes equal to or smaller than a second reference voltage value smaller than the first reference voltage value.
Kei Minagawa
Filed: 28 Jul 21
Utility
Semiconductor Device
2 Feb 23
A semiconductor device, including a semiconductor substrate, a transistor section and a diode section arranged in a predetermined arrangement direction and provided on the semiconductor substrate, is provided.
Tatsuya NAITO
Filed: 6 Oct 22