2134 patents
Page 23 of 107
Utility
Integrated circuit and power module
27 Dec 22
An integrated circuit includes a signal output circuit configured to output a timing signal indicating first and second timings of respectively switching first and second switching devices, first and second hold circuits respectively configured to receive first and second voltages corresponding to temperatures of the first and second switching devices, hold the first and second voltages for first and second time periods, and output the received first and second voltages in response to the first and second time periods having elapsed, and first and second control circuits respectively configured to control switching of the first and second switching devices with first and second driving capabilities corresponding to the temperatures of the first and second switching devices, based on the first and second voltages outputted from the first and second hold circuits and first and second driving signals for driving the first and second switching device.
Isao Kakebe
Filed: 22 Apr 22
Utility
Uninterruptible power supply system and uninterruptible power supply
27 Dec 22
An uninterruptible power supply system includes a plurality of uninterruptible power supplies, each of which includes a rectifier and an inverter and switches between a normal operation mode for normal operation and a load simulation mode for simulating a load.
Tatsuki Ohno, Kazuyoshi Umezawa, Masao Takeuchi
Filed: 7 Jun 21
Utility
Semiconductor Device
22 Dec 22
A semiconductor device includes: an insulated circuit substrate including first and second conductive layers on a top surface side; a first semiconductor chip mounted on the first conductive layer; a second semiconductor chip mounted on the second conductive layer; a printed circuit board including a first lower-side wiring layer arranged to be opposed to the first semiconductor chip, and a second lower-side wiring layer arranged to be opposed to the second semiconductor chip, the printed circuit board being provided with a curved part curved toward the insulated circuit substrate; a first connection member arranged to connect the first semiconductor chip with the first lower-side wiring layer; a second connection member arranged to connect the second semiconductor chip with the second lower-side wiring layer; and a third connection member arranged to connect the first conductive layer with the second lower-side wiring layer at the curved part.
Motohito HORI, Yoshinari IKEDA, Akio TOBA, Michio TAMATE, Ikuya SATO
Filed: 28 Apr 22
Utility
Resistance Element and Its Manufacturing Method
22 Dec 22
A resistance element includes a plurality of resistance chips stacked vertically, each of the plurality of resistance chips including a semiconductor substrate, one or more resistance layers on a field insulating film, a pad forming electrode on electrically connected to the one or more resistance layers, a relay wiring on the interlayer insulating film, laterally separated from the pad forming electrode, electrically connected to another end of at least one of the one or more resistance layers on one end and to a semiconductor substrate on another end, and a back surface electrode at a bottom of the semiconductor substrate, making ohmic contact with the semiconductor substrate, wherein the plurality of resistance chips have the same planar outer shape, and are stacked one over another so as to constitute a resistor as a whole.
Taichi KARINO
Filed: 2 May 22
Utility
Semiconductor Device
22 Dec 22
A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; a printed circuit board provided over and electrically connected to the semiconductor chip; a first external connection terminal electrically connected to the conductive plate and extending upward from the conductive plate; a first conductive block provided to surround an outer circumference of the first external connection terminal in an insulated state; and a sealing member provided to seal the semiconductor chip, the printed circuit board, and the first conductive block.
Motohito HORI, Yoshinari IKEDA, Akira HIRAO
Filed: 24 May 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
22 Dec 22
A bottom of a trench is an Si plane or a C plane while sidewalls of the trench are an m-plane.
Yasuyuki KAWADA
Filed: 22 Apr 22
Utility
Semiconductor Module
22 Dec 22
Provided is a semiconductor module that can improve the insulation properties at terminals to which electric power is supplied.
Akito NAKAGOME, Ryoichi KATO, Yuma MURATA
Filed: 28 Apr 22
Utility
Semiconductor Apparatus
22 Dec 22
A semiconductor apparatus includes: a first semiconductor chip; a resin enclosure having a space in which the first semiconductor chip is positioned; a lead terminal disposed in the resin enclosure; a second semiconductor chip configured to: control the first semiconductor chip, and be disposed on a first portion of the resin enclosure, the resin enclosure not overlapping with the lead terminal, as seen in planar view from a direction perpendicular to a top surface of the lead terminal; and a wire having a first end connected to the lead terminal and a second end connected to the second semiconductor chip.
Hiroki KOGAWA
Filed: 27 May 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
22 Dec 22
A silicon carbide semiconductor device is a SiC-SBD that has, in an active region, at a front surface of a semiconductor substrate containing silicon carbide, a mixture of a SBD structure having Schottky barrier junctions between a titanium film that is a lowermost layer of a front electrode and an n−-type drift region, and a JBS structure having pn junction portions between p-type regions and the n−-type drift region.
Yuichi HASHIZUME
Filed: 22 Apr 22
Utility
Semiconductor device
20 Dec 22
A semiconductor device is provided, wherein a semiconductor substrate includes: a first trench portion provided from a front surface of the semiconductor substrate to a predetermined depth, and having a longer portion and a shorter portion as seen from above; and a first conductivity-type floating semiconductor region at least partially exposed on the front surface and surrounded by the first trench portion, an interlayer insulating film has openings to electrically connect an emitter electrode and the floating semiconductor region, the openings include: a first opening closest to an outer end of the floating semiconductor region in a direction parallel to the longer portion; and a second opening second closest to the outer end in the direction parallel to the longer portion, and a distance between the first opening and the second opening is shorter than a distance between any adjacent two of the openings other than the first opening.
Yoshiharu Kato, Hidenori Takahashi, Tatsuya Naito
Filed: 1 Mar 18
Utility
Method and apparatus for integrating current sensors in a power semiconductor module
20 Dec 22
An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module.
Robert D. Lorenz, Minhao Sheng, Hiroyuki Nogawa, Yoshinari Ikeda, Eiji Mochizuki
Filed: 9 Aug 21
Utility
Semiconductor device
20 Dec 22
Provided is a semiconductor device that includes a semiconductor substrate that is provided with a first conductivity type drift region, a transistor portion that includes a second conductivity type collector region in contact with a lower surface of the semiconductor substrate, and a diode portion that includes a first conductivity type cathode region in contact with the lower surface of the semiconductor substrate, and is alternately disposed with the transistor portion along an arrangement direction in an upper surface of the semiconductor substrate.
Kouta Yokoyama, Toru Ajiki, Kaname Mitsuzuka, Tohru Shirakawa
Filed: 24 Jun 20
Utility
Semiconductor Device
15 Dec 22
P-type low-concentration regions face bottoms of trenches and extend in a longitudinal direction (first direction) of the trenches.
Yasuyuki HOSHI
Filed: 1 Jun 22
Utility
Semiconductor Device
15 Dec 22
A semiconductor device includes first and second conductive parts, a first bonding wire connecting the first and second conductive parts and having a non-flat portion between opposite ends thereof so that a portion between the opposite ends is away from the first and second conductive parts, a case having a housing space to accommodate the first and second conductive parts, including a sidewall having first to fourth lateral faces surrounding the housing space to form a rectangular shape in a plan view, and a cover disposed on the sidewall, a sealing member filling the case to seal the first bonding wire, and a first stress relaxer for relieving a stress in the first bonding wire.
Taichi ITOH
Filed: 26 Apr 22
Utility
Electronic Apparatus and Method for Manufacturing Electronic Apparatus
15 Dec 22
Provided is an electronic apparatus including a metal wiring.
Narumi SATO, Yuta TAMAI
Filed: 25 Apr 22
Utility
Semiconductor Device
15 Dec 22
Provided is a semiconductor device including: a lead frame having an upper surface provided with a concave portion and a lower surface provided with a convex portion; a semiconductor chip fixed to the upper surface of the lead frame; a solder layer provided in the concave portion and fixing the semiconductor chip to the upper surface of the lead frame; and a sealing resin for sealing the semiconductor chip and the lead frame.
Kenpei NAKAMURA
Filed: 25 Apr 22
Utility
Silicon carbide semiconductor device
13 Dec 22
An SBD of a JBS structure has on a front side of a semiconductor substrate, nickel silicide films in ohmic contact with p-type regions and a FLR, and a titanium film forming a Schottky junction with an n−-type drift region.
Naoyuki Ohse
Filed: 19 Apr 21
Utility
Semiconductor device
13 Dec 22
A semiconductor device includes a semiconductor substrate, an emitter region, a base region and multiple accumulation areas, and an upper accumulation area in the multiple accumulation areas is in direct contact with a gate trench section and a dummy trench section, in an arrangement direction that is orthogonal to a depth direction and an extending direction, a lower accumulation area furthest from the upper surface of the semiconductor substrate in the multiple accumulation areas has: a gate vicinity area closer to the gate trench section than the dummy trench section in the arrangement direction; and a dummy vicinity area closer to the dummy trench section than the gate trench section in the arrangement direction, and having a doping concentration of the first conductivity type lower than that of the gate vicinity area.
Tatsuya Naito
Filed: 1 Nov 20
Utility
Semiconductor device with a lifetime killer region in the substrate
13 Dec 22
A semiconductor device having, in a plan view thereof, an active region and a termination region that surrounds a periphery of the active region.
Yasuyuki Hoshi
Filed: 30 Dec 20
Utility
Overcurrent Detection Circuit and Drive Circuit
8 Dec 22
Provided is an overcurrent detection circuit for detecting an overcurrent flowing upon turning on of a switching element, the overcurrent detection circuit including a main current detection unit configured to detect whether an input signal according to a main current is higher than or equal to a set detection threshold, and a condition control unit configured to control at least one of a waveform of the input signal in the main current detection unit or the detection threshold to control a comparison condition in the main current detection unit, in which the condition control unit is configured to set the comparison condition to a first condition during a period from the turning on of the switching element until elapse of a first period, and set the comparison condition to a second condition during a period from the elapse of the first period until elapse of a second period.
Masashi AKAHANE
Filed: 17 Aug 22