2134 patents
Page 19 of 107
Utility
Testing Method and Manufacturing Method
2 Mar 23
Provided is a testing method for testing a semiconductor device provided with a main element portion including a main transistor portion and a main diode portion, and a sensing transistor portion for current detection, the testing method having: operating an element by causing a diode operation of the sensing transistor portion in the semiconductor device in a chip or wafer state; measuring the element by measuring a voltage-current characteristic showing a relationship between a voltage between main terminals of the sensing transistor portion and a current flowing through the main terminals during the diode operation; and determining the element by determining a defectiveness of the semiconductor device based on the voltage-current characteristic.
Atsushi SHOJI, Akira NISHIMURA
Filed: 19 Jul 22
Utility
Semiconductor device having conductive film
28 Feb 23
A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.
Morio Iwamizu
Filed: 28 Jun 19
Utility
Semiconductor device and overcurrent protection method
28 Feb 23
A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors.
Kei Minagawa
Filed: 25 Feb 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
23 Feb 23
After trench etching but before formation of a gate insulating film, a 15-minute to 60-minute heat treatment under a mixed gas atmosphere containing nitric oxide gas and nitrogen gas at a temperature from 1200 degrees C. to 1350 degrees C. and a 30-minute to 75-minute heat treatment under a nitrogen gas atmosphere held at the temperature of the 15-minute to 60-minute heat treatment are successively performed, oxidizing etching damage of inner walls of trenches.
Yasuyuki KAWADA
Filed: 30 Jun 22
Utility
Semiconductor Device
23 Feb 23
A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized.
Yuko NAKAMATA
Filed: 25 May 22
Utility
Semiconductor Module
23 Feb 23
A semiconductor module including a first switching device coupled to a first line, a terminal, at which a first voltage corresponding to a first current flowing through the first switching device is generated, coupled to the first switching device, a second switching device coupled to the first line for allowing a second current corresponding to the first current to flow therethrough, a voltage generation circuit configured to apply, to a second line, a second voltage lower than a power supply voltage, a resistor, across which a third voltage corresponding to the second current is generated, coupled between the second switching device and the terminal, a reference voltage circuit coupled to the terminal for generating a fourth voltage, and a comparator circuit coupled between the first and second lines, for determining whether the first switching device is in an overcurrent state based on a comparison between the third and fourth voltages.
Shigemi MIYAZAWA
Filed: 22 Jun 22
Utility
Driving Apparatus
23 Feb 23
A driving apparatus for driving a switching device is provided, the driving apparatus including: a high potential line; a high-potential-side switching control unit configured to perform switching as to whether to connect a control terminal of the switching device to the high potential line; a first resistor element located on a high-potential side and disposed in series with the high-potential-side switching control unit on a path from the control terminal of the switching device to the high potential line; a high-potential-side capacitor provided in parallel with the first resistor element on the path from the control terminal of the switching device to the high potential line; and a high-potential-side discharge control unit configured to control whether to discharge the high-potential-side capacitor.
Ryoga KIGUCHI, Hiromu TAKUBO
Filed: 20 Jun 22
Utility
Method of attaching an insulation sheet to encapsulated semiconductor device
21 Feb 23
A method of manufacturing a semiconductor device, including: preparing a power semiconductor chip, a lead frame having a die pad part and a terminal part integrally connected to the die pad part, and an insulating sheet in a semi-cured state; disposing the power semiconductor chip on a front surface of the die pad part and performing wiring; encapsulating the lead frame and the power semiconductor chip with an encapsulation raw material in a semi-cured state, to thereby form a semi-cured unit, the terminal part projecting from the semi-cured unit, and a rear surface of the die pad part being exposed from a rear surface of the semi-cured unit; pressure-bonding a front surface of the insulating sheet to the rear surface of the semi-cured unit to cover the rear surface of the die pad part; and curing the semi-cured unit and the insulating sheet by heating.
Masanori Tanaka
Filed: 26 Jan 21
Utility
Electronic apparatus and manufacturing method thereof
21 Feb 23
An electronic device includes a first part, and a circuit plate including a circuit substrate, a plating film made of a plating material and being disposed on a front surface of the substrate.
Naoki Takizawa
Filed: 5 Jan 21
Utility
Semiconductor device and manufacturing method thereof
21 Feb 23
A semiconductor device including an insulating circuit board.
Hiroyuki Nogawa
Filed: 22 Jan 21
Utility
Electrophotographic photoconductor, method of manufacturing the same, and electrophotographic device
21 Feb 23
Shinjiro Suzuki, Fengqiang Zhu, Masaru Takeuchi, Tomoki Hasegawa
Filed: 29 Jan 21
Utility
Semiconductor Device Manufacturing Method
16 Feb 23
A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame.
Masanori TANAKA, Akira FURUTA
Filed: 24 Jun 22
Utility
Silicon Carbide Semiconductor Device
16 Feb 23
In an entire intermediate region between an active region and an edge termination region, a p+-type region is provided between a p-type base region and a parallel pn layer.
Masakazu BABA, Shinsuke HARADA
Filed: 31 Oct 22
Utility
Semiconductor Device
16 Feb 23
A semiconductor device includes: a semiconductor base body of a first conductivity type; a high-potential-side terminal connected to the semiconductor base body; a horizontal control circuit element deposited at an upper part of the semiconductor base body; a signal input terminal connected to a control electrode of the control circuit element; a low-potential-side terminal connected to a main electrode region of the control circuit element; an input-side diode connected in a forward direction between the signal input terminal and the semiconductor base body; and a vertical protective element connected between the semiconductor base body and the low-potential-side terminal.
Yoshiaki TOYODA, Hideaki KATAKURA
Filed: 22 Jun 22
Utility
Semiconductor Device and Method of Manufacturing Semiconductor Device
16 Feb 23
A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides.
Naoki TAKIZAWA
Filed: 31 Oct 22
Utility
Integrated Circuit and Power Supply Circuit
16 Feb 23
An integrated circuit for a power supply including a power transistor, the integrated circuit being configured to switch and drive the power transistor.
Hiroaki MATSUMOTO, Masayuki YAMADAYA, Yoshinori KOBAYASHI
Filed: 22 Jun 22
Utility
Semiconductor Device
16 Feb 23
A semiconductor device having an active portion and a gate pad portion on a semiconductor substrate includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type.
Keiji OKUMURA
Filed: 26 Oct 22
Utility
Semiconductor Module, Method for Manufacturing Semiconductor Module, and Level Different Jig
16 Feb 23
A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base.
Kazunaga ONISHI, Takashi MASUZAWA, Hiromichi GOHARA
Filed: 1 Nov 22
Utility
Semiconductor module and wire bonding method
14 Feb 23
A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.
Takafumi Yamada, Kohei Yamauchi, Tatsuhiko Asai, Hiromichi Gohara
Filed: 1 Mar 21
Utility
Signal transmitting device
14 Feb 23
A pressure sensor element and a receiving circuit are formed on an IC chip.
Masashi Akahane
Filed: 25 Jan 18