2134 patents
Page 22 of 107
Utility
Semiconductor Module and Manufacturing Method Therefor
12 Jan 23
A semiconductor module includes first and second semiconductor chips including first and second main electrodes, respectively; first and second connection terminals electrically connected to the first and second main electrodes, respectively; and an insulating sheet.
Tadahiko SATO, Norihiro NASHIDA
Filed: 24 May 22
Utility
Semiconductor device, semiconductor manufacturing apparatus and method of manufacturing semiconductor device having printed circuit board and insulating board with complementary warps
10 Jan 23
A semiconductor device includes: a first insulating circuit substrate; a first semiconductor chip mounted on a top surface of the first insulating circuit substrate; a printed circuit board arranged over the first insulating circuit substrate; a first external terminal inserted to the printed circuit board and having one end bonded to the top surface of the first insulating circuit substrate; and a first pin inserted to the printed circuit board and having one end bonded to a top surface of the first semiconductor chip, wherein the first insulating circuit substrate and the printed circuit board having warps complimentary to each other.
Yuhei Nishida
Filed: 10 Nov 20
Utility
Semiconductor device
10 Jan 23
A semiconductor device, having a substrate including an insulating plate and a circuit board provided on a front surface of the insulating plate.
Bin Wan Mat Wan Azha
Filed: 27 Aug 20
Utility
Semiconductor device and manufacturing method of 1HE same
10 Jan 23
A semiconductor device includes a semiconductor substrate, a transistor section, a diode section, and a boundary section provided between the transistor section and the diode section in the semiconductor substrate.
Soichi Yoshida
Filed: 13 May 21
Utility
Semiconductor device and manufacturing method of semiconductor device
10 Jan 23
There is provided a semiconductor device comprising: a semiconductor substrate including a drift region of a first conductivity type; an emitter region of the first conductivity type provided above the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a base region of a second conductivity type provided between the emitter region and the drift region inside the semiconductor substrate; a first accumulation region of the first conductivity type provided between the base region and the drift region inside the semiconductor substrate and having a doping concentration higher than the drift region; a plurality of trench portions provided to pass through the emitter region, the base region and first accumulation region from an upper surface of the semiconductor substrate, and provided with a conductive portion inside; and a capacitance addition portion provided below the first accumulation region to add a gate-collector capacitance thereto.
Tatsuya Naito
Filed: 18 Nov 20
Utility
Semiconductor Module and Method for Manufacturing Semiconductor Module
5 Jan 23
There are provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where a connection section used for the connection to a semiconductor element is arranged and a manufacturing method for a semiconductor module.
Ryoichi KATO
Filed: 25 May 22
Utility
Integrated Circuit and Power Module
5 Jan 23
An integrated circuit includes a signal output circuit configured to output a timing signal indicating first and second timings of respectively switching first and second switching devices, first and second hold circuits respectively configured to receive first and second voltages corresponding to temperatures of the first and second switching devices, hold the first and second voltages for first and second time periods, and output the received first and second voltages in response to the first and second time periods having elapsed, and first and second control circuits respectively configured to control switching of the first and second switching devices with first and second driving capabilities corresponding to the temperatures of the first and second switching devices, based on the first and second voltages outputted from the first and second hold circuits and first and second driving signals for driving the first and second switching device.
Isao KAKEBE
Filed: 22 Apr 22
Utility
Integrated Circuit and Semiconductor Module
5 Jan 23
An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.
Masashi AKAHANE, Taizo ASANO
Filed: 23 May 22
Utility
Current detection circuit, current detection method, and semiconductor module
3 Jan 23
There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.
Kazumi Takagiwa
Filed: 29 Jun 20
Utility
Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof
3 Jan 23
A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate.
Ryoichi Kato, Yoshinari Ikeda, Tatsuo Nishizawa, Motohito Hori, Eiji Mochizuki
Filed: 5 Jan 21
Utility
Semiconductor device and method for manufacturing semiconductor device having first and second wires in different diameter
3 Jan 23
A semiconductor device includes a semiconductor element having a surface electrode layer; a first wire that is electrically connected to the first main surface of the surface electrode layer at a plurality of first connecting portions and is arranged in a first direction on the first main surface; and a second wire that is electrically connected to the first main surface of the surface electrode layer at a second connecting portion and is arranged in a second direction on the first main surface, wherein a second circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the second wire, is larger than a first circle equivalent diameter, which is a diameter of a circle having a same cross-sectional area as the first wire.
Takeyoshi Nishimura
Filed: 1 Dec 20
Utility
Semiconductor Module and Method of Manufacturing Semiconductor Module
29 Dec 22
A semiconductor module with temperature characteristics adjustable through a measurement device.
Taizo ASANO
Filed: 21 Apr 22
Utility
Heat Sink
29 Dec 22
A heat sink includes a base plate; a cover overlapping the base plate; fins, each having a plate-like shape projecting from the base plate in a direction perpendicular to the base plate, located between the base plate and the cover; one or a plurality of first fin groups composed of a plurality of the fins arranged with a gap therebetween in a first direction; and one or a plurality of second fin groups composed of a plurality of the fins arranged with a gap therebetween in the first direction, and adjacent to the first fin group with a gap therebetween in a second direction.
Takumi NAKAMURA, Eiji ANZAI, Tomoyuki HIRAYAMA, Yutaka HIRANO, Ryoichi KATO, Hiromichi GOHARA, Kohei YAMAUCHI
Filed: 29 Aug 22
Utility
Semiconductor Module
29 Dec 22
There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged.
Ryoichi KATO, Yuma MURATA, Naoyuki KANAI
Filed: 26 May 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
29 Dec 22
Provided is a manufacturing method of a semiconductor device including a semiconductor substrate, including: forming an interlayer dielectric film above the semiconductor substrate; forming contact holes exposed from a part of an upper surface of the semiconductor substrate on the interlayer dielectric film; and forming an metal electrode including an element of aluminum by DC sputtering above the interlayer dielectric film and inside the contact holes, wherein in at least a part of a process of forming the metal electrode in forming the electrode, a heating temperature that is a temperature for heating the semiconductor substrate is 400° C. or higher, and a DC sputtering power is 5 kW or lower.
Naruhisa NAGATA
Filed: 25 Apr 22
Utility
Semiconductor Device and Manufacturing Method Therefor
29 Dec 22
A semiconductor device includes a baseplate and a case which includes an external wall surrounding an internal space and a dividing wall extending in a first direction and separating the space into compartments.
Naoyuki KANAI, Shun OKADA, Ryoichi KATO
Filed: 26 May 22
Utility
Semiconductor Device
29 Dec 22
A semiconductor device includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type; a first semiconductor region of a second conductivity type; a second semiconductor region of the first conductivity type; a trench; a gate insulating film; a gate electrode; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the second conductivity type; a fifth semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration lower than an impurity concentration of the second semiconductor layer; a first electrode; and a second electrode.
Shinichiro Matsunaga
Filed: 31 May 22
Utility
Cooling apparatus, semiconductor module, and vehicle
27 Dec 22
A semiconductor module including a cooling apparatus and a semiconductor device mounted on the cooling apparatus is provided.
Nobuhide Arai
Filed: 11 May 21
Utility
Silicon carbide semiconductor device
27 Dec 22
A silicon carbide semiconductor device, including a semiconductor substrate, and a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions and a plurality of fourth semiconductor regions formed in the semiconductor substrate.
Naoki Kumagai
Filed: 27 Jan 21
Utility
Uninterruptible power supply system and uninterruptible power supply
27 Dec 22
An uninterruptible power supply system includes a plurality of uninterruptible power supplies, each of which includes a rectifier and an inverter and switches between a normal operation mode for normal operation and a load simulation mode for simulating a load.
Tatsuki Ohno, Kazuyoshi Umezawa, Masao Takeuchi
Filed: 7 Jun 21