2134 patents
Page 24 of 107
Utility
Method of Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
8 Dec 22
On a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, an interlayer insulating film, first electrodes, and a second electrode are formed.
Takafumi UCHIDA
Filed: 22 Apr 22
Utility
Semiconductor Device
8 Dec 22
There is provided a semiconductor device including a semiconductor substrate, the semiconductor device including: a sensing portion that is provided on the semiconductor substrate and that is configured to detect predetermined physical information; a sensing pad portion that is provided above an upper surface of the semiconductor substrate and that is connected to the sensing portion; a gate runner which is provided above the upper surface of the semiconductor substrate and to which a gate potential is applied; and one or more separated conductive portions in which each separated conductive portion is provided between the sensing pad portion and the semiconductor substrate and that is separated from the gate runner.
Tohru SHIRAKAWA, Yasunori AGATA, Naoki SAEGUSA, Kaname MITSUZUKA
Filed: 17 Aug 22
Utility
Semiconductor Device
8 Dec 22
There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.
Tohru SHIRAKAWA, Yasunori AGATA, Naoki SAEGUSA
Filed: 17 Aug 22
Utility
Semiconductor Device
8 Dec 22
A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided.
Tatsuya NAITO
Filed: 14 Aug 22
Utility
Semiconductor module
6 Dec 22
A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate.
Akira Hirao, Yoshinari Ikeda, Motohito Hori
Filed: 23 Oct 20
Utility
Semiconductor device with a substrate having depressions formed thereon
6 Dec 22
A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3.
Yoshinori Oda, Yoshinori Uezato
Filed: 28 Dec 20
Utility
Terminal protection circuit of semiconductor chip
6 Dec 22
A terminal protection circuit of a semiconductor chip, including a first pad serving as a ground terminal of the semiconductor chip, a ground line extending along an outer periphery of the semiconductor chip and being connected to the first pad, and an overcurrent sensing circuit.
Hiroshi Maruyama
Filed: 25 Nov 20
Utility
Current flow between a plurality of semiconductor chips
6 Dec 22
A semiconductor device is provided, which includes a semiconductor chip; a first current input/output portion that is electrically connected to the semiconductor chip; a second current input/output portion that is electrically connected to the semiconductor chip; three or more conducting portions provided with the semiconductor chip, between the first current input/output portion and the second current input/output portion; and a current path portion having a path through which current is conducted to each of the three or more conducting portions, wherein the current path portion includes a plurality of slits.
Shuangching Chen, Sayaka Yamamoto
Filed: 30 Mar 20
Utility
Semiconductor Device Comprising a Capacitor
1 Dec 22
A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case.
Ryoichi KATO, Yoshinari IKEDA, Yuma MURATA
Filed: 8 Aug 22
Utility
Diagnostic Apparatus, Diagnostic Method, Recording Medium Having Recorded Thereon Diagnostic Program, and Power Conversion Apparatus Including Diagnostic Apparatus
1 Dec 22
There is provided a diagnostic apparatus including: a data acquisition unit configured to acquire target data relating to a current value between a power conversion apparatus and a motor; a detection unit configured to detect a peak value in a time series waveform of the target data; a counting operation unit configured to use a frequency counting method to calculate an amplitude of the peak value and a frequency of occurrence of the amplitude; and a diagnostic unit configured to diagnose an abnormality of the motor based on the amplitude and the frequency of occurrence.
Hiroaki UETA, Hiroyuki KOKUBUN
Filed: 25 Apr 22
Utility
Semiconductor Device
1 Dec 22
A semiconductor device is an IGBT of a trench-gate structure and has a storage region directly beneath a p−-type base region.
Tohru SHIRAKAWA
Filed: 12 Aug 22
Utility
Manufacturing Method of Semiconductor Device
1 Dec 22
Provided is a manufacturing method of a semiconductor device comprising a semiconductor substrate which includes a first surface and a second surface which is on an opposite side of the first surface, the method comprising: a front surface processing for providing a first resist to the first surface of the semiconductor substrate and processing the first surface; a first protective film forming for forming a first protective film above the first surface of the semiconductor substrate; a second protective film forming for forming a second protective film above the first protective film, wherein a material of the second protective film is different from that of the first protective film; a back surface processing for processing the second surface of the semiconductor substrate; and a protective film removing for selectively removing the second protective film.
Kazuhiro KITAHARA
Filed: 22 Mar 22
Utility
Semiconductor Module and Method for Fabricating the Same
1 Dec 22
Provided is a semiconductor module including: a layered substrate on which a semiconductor chip is provided; and a connection terminal including a connection portion connected to the layered substrate, wherein the connection portion includes at least one ultrasonic connection section, and at least one laser-welded section, at least a portion of which is provided at a location other than a location at which the ultrasonic connection section is provided.
Yoshihiko KAWAKAMI
Filed: 22 Mar 22
Utility
Power semiconductor module and leakage current test method for the same
29 Nov 22
A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third terminal and a common terminal.
Tadahiko Sato
Filed: 1 Jun 20
Utility
Current generation circuit, drive circuit, and current adjustment method
29 Nov 22
A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.
Takahiro Mori
Filed: 26 Aug 21
Utility
Switching control circuit and power supply circuit
29 Nov 22
A switching control circuit that controls switching of a switching device, the switching control circuit includes a frequency modulation circuit that generates an oscillator signal, and modulates a frequency of an oscillator signal with a predetermined frequency and a modulation index of two or more, and a drive circuit that drives the switching device in response to a signal corresponding to the modulated oscillator signal, the predetermined frequency being higher than a frequency indicative of a value that is a quarter of a half width of a bandpass filter used for measuring noise generated when the switching device is driven.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 25 Sep 20
Utility
Electronic circuit and semiconductor module
29 Nov 22
An electronic circuit, including a first switching device that contains a first semiconductor material with a first band gap, and a second switching device that is coupled in parallel to the first switching device, and contains a second semiconductor material with a second band gap smaller than the first band gap.
Tadahiko Sato
Filed: 25 May 21
Utility
Drive circuit of voltage-controlled power semiconductor element
29 Nov 22
A drive circuit of a voltage-controlled power semiconductor element, including first to fourth switching elements, first and second delay circuits, an overcurrent detection circuit, a slow shutdown detection circuit and a flip-flop.
Masanari Fujii
Filed: 30 Sep 20
Utility
Grid interconnection device and server
29 Nov 22
It is desirable to improve the accuracy of voltage control in the grid interconnection device for supplying the power generated by the distributed power source to the interconnection point.
Songhao Yin, Takayuki Nagakura
Filed: 24 Jun 21
Utility
Semiconductor device
29 Nov 22
A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element.
Kenichiro Sato
Filed: 21 Apr 21