2134 patents
Page 28 of 107
Utility
Switching apparatus and determination apparatus
11 Oct 22
Provided is a switching apparatus and a determination apparatus connected to the switching apparatus.
Tadahiko Sato
Filed: 27 Jul 21
Utility
Power converter device with non-overlapping bus bars
11 Oct 22
In a power conversion device, cable connection positions of connections in which a plurality of bus bars is respectively connected to external line cables are non-overlapping with each other as viewed from a side on which the external line cables are pulled out.
Keita Koshii
Filed: 24 Oct 19
Utility
Semiconductor device and method for producing semiconductor device
11 Oct 22
A semiconductor device including: a semiconductor substrate having a first and a second side, and including a donor layer with a doping concentration profile in a depth direction from the first to the second side.
Takashi Yoshimura, Masayuki Miyazaki, Hiroshi Takishita, Hidenao Kuribayashi
Filed: 19 Jan 21
Utility
Semiconductor Device and Fabrication Method
6 Oct 22
A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided.
Yasunori AGATA, Takahiro TAMURA, Toru AJIKI
Filed: 23 Jun 22
Utility
Semiconductor Device
6 Oct 22
A semiconductor device includes n-type drift layer, n-type current spreading layer having higher impurity concentration than the drift layer, p-type base region provided on top surface, p-type gate-bottom protection region located in the current spreading layer, having first bottom edge portion formed of curved surface, p-type base-bottom embedded region in contact with bottom surface of the base region, having second bottom edge portion formed of curved surface on side surface facing the gate-bottom protection region, being separated from the gate-bottom protection region, and insulated gate electrode structure provided in trench penetrating through the base region to reach the gate-bottom protection region.
Tomohiro MORIYA
Filed: 28 Jan 22
Utility
Semiconductor Device
6 Oct 22
A semiconductor device, including, a drift region of a first conductivity type provided on a semiconductor substrate; a field stop region of a first conductivity type provided below the drift region and having one or more peaks; and a collector region of a second conductivity type provided below the field stop region, wherein when an integral concentration of the collector region is set to be x [cm−2], a depth of a first peak that is a shallowest from the back surface of the semiconductor substrate out of the one or more peaks is set to be y1 [μm], line A1: y1=(−7.4699E−01)ln(x)+(2.7810E+01), and line B1: y1=(−4.7772E−01)ln(x)+(1.7960E+01), a depth of the first peak and the integral concentration are within a range between a line A1 and a line B1, is provided.
Yasunori AGATA, Tohru SHIRAKAWA
Filed: 20 Jun 22
Utility
Semiconductor Device
6 Oct 22
Provided is a semiconductor device, wherein the buffer region of the semiconductor substrate has a plurality of hydrogen chemical concentration peaks arranged in different positions in the depth direction of the semiconductor substrate, a plurality of doping concentration peaks; and a high concentration region provided between the deepest hydrogen chemical concentration peak and the drift region, wherein the doping concentration distribution of the depth direction of the high concentration region has a slope where the doping concentration gradually decreases toward the drift region, wherein the slope includes a convex portion on top, wherein in an approximate concentration line that approximates a gradient of the slope with a straight line, when the concentration in a depth position of the shallowest doping concentration peak is referred to as the shallowest reference concentration, the doping concentration of the shallowest doping concentration peak is from 5% to 50% of the shallowest reference concentration.
Takamasa ISHIKAWA, Noriaki YAO
Filed: 21 Jun 22
Utility
Semiconductor device
4 Oct 22
A semiconductor device in which a semiconductor element mounted on a laminate substrate and an electrically conductive connection member are sealed with a sealing material, includes: a primer layer in an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member, in which the sealing material includes a first sealing layer which is provided in contact with the primer layer; and a second sealing layer which covers the first sealing layer, the semiconductor device satisfies αp≥α1>α2 in which αp, α1, and α2 represent coefficients of linear thermal expansion of the primer layer, the first sealing layer, and the second sealing layer, respectively, αc≥15×10−6/° C. in which αc represents a composite coefficient of linear thermal expansion of the sealing layers, and Ec≥5 GPa or more in which Ec represents a composite Young's modulus of the sealing layers.
Yuko Nakamata
Filed: 26 Jan 21
Utility
Semiconductor module and semiconductor-module deterioration detecting method
4 Oct 22
A semiconductor module including a semiconductor element which is bonded to a wiring pattern part and connects or disconnects two main electrode terminals to or from each other according to a drive signal applied to a gate electrode terminal, includes a deterioration detecting circuit configured to use one main electrode terminal of the two main electrode terminals of the semiconductor element with an applied DC voltage, as a reference potential, and detect deterioration of a joining part of the semiconductor element on the basis of a gate voltage which is the voltage between the one main electrode terminal and the gate electrode terminal and an inter-main-electrode voltage which is the voltage between the one main electrode terminal and the other main electrode terminal, and outputs an alarm signal.
Eiji Kurosawa
Filed: 28 Jul 21
Utility
Semiconductor Device
29 Sep 22
A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented.
Yuko NAKAMATA
Filed: 1 Feb 22
Utility
Control Apparatus and Control Method
29 Sep 22
A control apparatus includes a first controller which controls an operation of a door of a railway vehicle, a second controller capable of controlling the operation of the door, and a diagnosis tester.
Kotaro UMEZAWA, Takuya WATANABE
Filed: 23 Feb 22
Utility
Semiconductor Element Bonding Portion and Semiconductor Device
29 Sep 22
An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin.
Masaaki TACHIOKA, Takashi SAITO
Filed: 28 Jan 22
Utility
Monitoring Apparatus and Monitoring Method
29 Sep 22
A monitoring apparatus includes a sensing circuitry configured to sense a locked or released state of a door of a railway vehicle, or sense an open or closed state of the door, and a processor.
Hidenori MATSUSHIMA, Kenji FUJITA
Filed: 23 Feb 22
Utility
Integrated Circuit
29 Sep 22
An integrated circuit for a power supply circuit that includes a state-indicating circuit, which is a first or second circuit when the power supply circuit is of a non-isolated or isolated type, as the case may be.
Nobuyuki HIASA
Filed: 26 Jan 22
Utility
Semiconductor Device, Semiconductor Package, Semiconductor Module, and Semiconductor Circuit Device
29 Sep 22
A semiconductor device that can detect temperature appropriately is provided.
Kenichiro SATO
Filed: 16 Jun 22
Utility
Reciprocal Calculating Method and Reciprocal Calculating Apparatus
29 Sep 22
With respect to a method for execution by an information processing apparatus, the method includes calculating a reciprocal in multiplication on a residue field modulo a power of 2.
Kenji TAKATSUKASA
Filed: 23 Feb 22
Utility
Temperature detection device
27 Sep 22
A temperature detection device includes a temperature detection diode, a comparator, and a forward current correction circuit.
Takahiro Mori
Filed: 22 Feb 19
Utility
Semiconductor module, vehicle and manufacturing method
27 Sep 22
A semiconductor module comprising a semiconductor apparatus and a cooling apparatus, where: the semiconductor apparatus includes a semiconductor chip and a circuit board on which the semiconductor chip is mounted; and the cooling apparatus includes: a top plate on which the semiconductor apparatus is mounted; a jacket including a side wall connected to the top plate, a bottom plate connected to the side wall and facing the top plate, and a cooling pin fin extending in such a manner as to taper from the bottom plate toward the top plate, where at least the bottom plate and the cooling pin fin are integrally formed, and at least one of ends of the cooling pin fin is firmly fixed to the top plate; and a coolant flow portion defined by the top plate and the jacket and for flow of coolant.
Nobuhide Arai
Filed: 7 Jan 20
Utility
Semiconductor device and method of manufacturing semiconductor device
27 Sep 22
A semiconductor device, including a substrate, and a deposit layer and a semiconductor layer formed sequentially on the substrate.
Yasuyuki Hoshi, Yuichi Harada, Takashi Shiigi
Filed: 29 Aug 16
Utility
Semiconductor device
27 Sep 22
A semiconductor device having an arm block.
Hiroaki Ichikawa
Filed: 22 Jan 21