2134 patents
Page 31 of 107
Utility
Semiconductor Device
1 Sep 22
A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, a lower gradient portion in which the concentration decreases from the maximum portion to a drift region, and a kink portion at which a differential value of the doping concentration distribution exhibits an extreme value in a region except a region in which the differential value exhibits a maximum value or a minimum value.
Tatsuya NAITO
Filed: 17 May 22
Utility
Semiconductor device and test method thereof
30 Aug 22
A semiconductor device includes an internal power supply generation circuit that generates an internal power supply voltage from an external power supply voltage and a non-volatile memory circuit.
Tetsuya Kawashima
Filed: 27 Apr 20
Utility
Semiconductor device and method of manufacturing semiconductor device
30 Aug 22
The semiconductor device includes an insulating circuit substrate mounted with a semiconductor element; an external terminal; a base including a support portion; an adhesive sheet; and a sealing portion covering the semiconductor element.
Yuji Ichimura
Filed: 25 Jul 19
Utility
Semiconductor device
30 Aug 22
In an inactive region of an active region, a gate pad, a gate poly-silicon layer, and a gate finger are provided at a front surface of a semiconductor substrate, via an insulating film.
Keiji Okumura
Filed: 28 Sep 20
Utility
Semiconductor device
30 Aug 22
A semiconductor device that allows easy hole extraction is provided.
Tatsuya Naito
Filed: 10 Feb 21
Utility
Superjunction semiconductor device including parallel PN structures and method of manufacturing thereof
30 Aug 22
A semiconductor device has an active region through which current flows and a termination structure region.
Toshiaki Sakata
Filed: 2 Mar 20
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
30 Aug 22
After trench etching, trench corner portions are rounded by hydrogen annealing at a temperature of at least 1500 degrees C.
Makoto Utsumi, Yasuyuki Kawada, Aki Takigawa
Filed: 30 Oct 20
Utility
Short Circuit Detector and Power Converter
25 Aug 22
A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch.
Kunio MATSUBARA, Ryoga KIGUCHI
Filed: 29 Dec 21
Utility
Semiconductor Device and Manufacturing Method Thereof
25 Aug 22
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion.
Kaname MITSUZUKA, Misaki TAKAHASHI, Tohru SHIRAKAWA
Filed: 10 May 22
Utility
Sensor device configured to reduce output errors due to temperature characteristics
23 Aug 22
It is desired to further reduce output errors which are caused by temperature characteristics.
Kazuhiro Matsunami, Mutsuo Nishikawa, Ryohei Uzawa
Filed: 19 Feb 20
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Aug 22
A semiconductor device has transistor portions and diode portions.
Kazuki Kamimura, Motoyoshi Kubouchi
Filed: 20 Apr 21
Utility
Semiconductor module and method of manufacturing semiconductor module
23 Aug 22
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki Hozumi
Filed: 2 Apr 20
Utility
Semiconductor device and method of manufacturing semiconductor device
23 Aug 22
A semiconductor device is provided, including: a semiconductor substrate having a first conductivity type of drift region; a transistor section having a gate trench section on an upper surface of the semiconductor substrate; a diode section having a first conductivity type of cathode region on a lower surface of the semiconductor substrate, the cathode region having a higher doping concentration than the drift region; and a buffering region arranged between the transistor section and the diode section, the diode section having a first upper surface side lifetime control region where a first valley portion is provided in a carrier lifetime distribution in a depth direction of the semiconductor substrate, and the buffering region having a second upper surface side lifetime control region where a second valley portion is provided in the carrier lifetime distribution, the second valley portion being wider, in the depth direction, than the first valley portion.
Soichi Yoshida
Filed: 26 Mar 20
Utility
Semiconductor device
23 Aug 22
A semiconductor device, including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided on the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a plurality of first semiconductor regions of the first conductivity type, selectively provided in the second semiconductor layer at a surface thereof, a plurality of gate insulating films in contact with the second semiconductor layer, a plurality of gate electrodes respectively provided on the gate insulating films, a plurality of first electrodes provided on the second semiconductor layer and the first semiconductor regions, and a second electrode provided on a back surface of the semiconductor substrate.
Akimasa Kinoshita
Filed: 27 Jan 21
Utility
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
23 Aug 22
Before formation of gate insulating films, an oblique ion implantation of oxygen into opposing sidewalls of trenches, from a top of an oxide film mask is performed, forming oxygen ion-implanted layers in surface regions of the sidewalls.
Yasuyuki Kawada
Filed: 30 Dec 20
Utility
Apparatus, power supply, method and recording medium to determine a state of a three-phase AC power supply using instantaneous voltages of three phases of the AC voltage
23 Aug 22
A conventional technique makes a configuration complicated.
Qichen Wang, Nobuyuki Tawada
Filed: 30 Sep 19
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
18 Aug 22
Provided is a semiconductor device including: a semiconductor substrate having a substrate upper surface; and an embedded oxide film provided in the substrate upper surface and at least partially embedded below the substrate upper surface.
Yutaka UCHIDA
Filed: 26 Dec 21
Utility
Semiconductor Device and Manufacturing Method Thereof
18 Aug 22
A semiconductor device includes a terminal portion including a second external terminal, an insulating sheet disposed on the second external terminal, and a first external terminal disposed on the insulating sheet.
Akito NAKAGOME, Ryoichi KATO, Yoshinari IKEDA
Filed: 29 Dec 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
18 Aug 22
A silicon carbide semiconductor device, including a semiconductor substrate containing silicon carbide, a bonding wire, and a surface electrode of an aluminum alloy containing silicon, the surface electrode being provided on a surface of the semiconductor substrate, and having a joint portion to which the bonding wire is bonded.
Naoyuki OHSE, Makoto UTSUMI
Filed: 30 Dec 21
Utility
Physical Quantity Sensor Device and Method of Manufacturing Physical Quantity Sensor Device
18 Aug 22
A sensor device for measuring a physical quantity.
Kimihiro ASHINO
Filed: 29 Dec 21