2134 patents
Page 29 of 107
Utility
Semiconductor device and method of manufacturing semiconductor device
27 Sep 22
A semiconductor device includes an insulated circuit board in which a metal layer is formed on one surface of an insulating board and a semiconductor element having a polygonal shape when viewed in a plan view that is bonded to the metal layer via a bonding material.
Kazuo Enomoto
Filed: 26 Sep 19
Utility
Semiconductor device and method of manufacturing semiconductor device
27 Sep 22
A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set.
Toshio Denta, Masanori Tanaka
Filed: 23 Jun 20
Utility
Semiconductor Device
22 Sep 22
A first wiring member bends at a first bent portion in the shape of the letter “L” in a side view and includes a first horizontal portion parallel to the principal surface of a semiconductor chip and a first vertical portion perpendicular to the first horizontal portion.
Satoshi KANEKO
Filed: 27 Jan 22
Utility
Fabrication Method of Semiconductor Device and Test Method of Semiconductor Device
22 Sep 22
Provided is a fabrication method of a semiconductor device comprising an element forming process of forming a semiconductor element in a semiconductor substrate and forming a metal electrode above the semiconductor substrate; a plating process of plating the metal electrode; an annealing process of annealing the semiconductor substrate; a voltage applying process of applying a voltage corresponding to a thickness of the gate insulating film to the gate insulating film after the annealing process; and a judging process of measuring a threshold voltage of the semiconductor element after the voltage applying process, and judging a quality of the semiconductor element based on a measurement result.
Atsushi SHOJI, Soichi YOSHIDA
Filed: 23 Jan 22
Utility
Semiconductor Device
22 Sep 22
A semiconductor device includes a conductive board, a contact component having a cylindrical through hole and including a main body portion with first and second open ends, and an external connection terminal inserted in the through hole of the contact component, having four outer surfaces extending in an insertion direction to form a quadrangular prism shape, and having four corner portions along an insertion direction pressed by an inner circumferential surface of the through hole of the contact component.
Masaoki MIYAKOSHI
Filed: 31 Jan 22
Utility
Short Circuit Protection Apparatus for Power Conversion Apparatus
22 Sep 22
A short circuit protection apparatus for a power conversion apparatus supplying power to a load via a plurality of switches connected to each other in parallel includes Ma current detectors each configured to detect a sum of currents flowing through two or more switches among the plurality of switches so as to output a detection signal indicative of the sum that is detected, wherein Ma is 1 less than M, which is the number of the plurality of switches, and a short circuit determiner configured to determine, based on detection signals obtained from the respective Ma current detectors, occurrence of short circuit failure in the plurality of switches to output a cutoff instruction signal for stopping on-off drive of the plurality of switches.
Yasunao SAGA
Filed: 31 Jan 22
Utility
Switching Control Circuit and Resonant Converter
22 Sep 22
A switching control circuit controls switching of a switching device, which controls a resonance current of a resonant converter, with a frequency corresponding to an output voltage of the resonant converter.
Ryuunosuke ARAUMI, Ryuji YAMADA
Filed: 26 Jan 22
Utility
Semiconductor Module
22 Sep 22
A semiconductor module is provided with a semiconductor element, a case housing the semiconductor element, and an external terminal that electrically connects a main electrode of the semiconductor element to an external conductor.
Taichi ITOH
Filed: 1 Jun 22
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
22 Sep 22
A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first semiconductor region of the first conductivity type selectively provided on a first side of the third semiconductor layer opposite to a second side thereof facing the silicon carbide semiconductor substrate, second semiconductor regions of the second conductivity type that have an impurity concentration higher than that of the second semiconductor layer, trenches, gate electrodes provided via gate insulating films, an interlayer insulating film, a first electrode, and a second electrode.
Masanobu IWAYA, Kensuke HATA
Filed: 23 Feb 22
Utility
Semiconductor Device, Semiconductor Module, Vehicle, and Manufacturing Method of Semiconductor Device
22 Sep 22
Provided is a semiconductor device including: a laminated substrate in which a circuit layer, an insulating layer, and a metal layer are sequentially laminated.
Sho TAKANO
Filed: 23 Jan 22
Utility
Driver Circuit and Semiconductor Device
22 Sep 22
A driver circuit for driving a switching device having a control electrode.
Shinichiro ADACHI, Hirohisa ARAI
Filed: 26 Jan 22
Utility
Semiconductor device and fabrication method for semiconductor device
20 Sep 22
A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.
Motoyoshi Kubouchi, Kosuke Yoshida, Soichi Yoshida, Koh Yoshikawa, Nao Suganuma
Filed: 11 Jun 20
Utility
Semiconductor device
20 Sep 22
A semiconductor device is an IGBT of a trench-gate structure and has a storage region directly beneath a p−-type base region.
Tohru Shirakawa
Filed: 22 Oct 19
Utility
Semiconductor device
20 Sep 22
A semiconductor device includes: a plurality of semiconductor chips each including a first main electrode on a top surfaces and including a second main electrode and a control electrode on a bottom surface; a first common main electrode connected to the first main electrodes; a printed board including a control wiring part and a main wiring part provided on a bottom surface of an insulating layer, and a common control electrode and a second common main electrode provided on a top surface of the insulating layer and electrically connected to the control wiring part and the main wiring part; projection electrodes bonding the control electrodes to the control wiring part; projection electrodes bonding the second main electrodes to the main wiring part; and a sealing member sealing the semiconductor chips and exposing the first common main electrode, the common control electrode, and the second common main electrode.
Hideyo Nakamura
Filed: 26 May 21
Utility
Magnetic Field Generator, Method for Manufacturing Magnetic Field Generator, and Linear Motor Using Magnetic Field Generator
15 Sep 22
A magnetic field generator including: a yoke; and a plurality of main magnetic pole magnets and a plurality of secondary magnetic pole magnets, the main magnetic pole magnets and the secondary magnetic pole magnets comprising a rare earth sintered magnet, having magnetic pole orientations different from each other by substantially 90°, and being alternately arranged in a linear Halbach magnet array without gaps and fixed to the yoke, wherein near contact surfaces of the main magnetic pole magnets and the secondary magnetic pole magnets, a grain boundary diffusion layer is formed in which at least one of Dy or Tb being heavy rare earth elements or a compound of at least one of the Dy or the Tb is diffused into internal grain boundaries from the contact surfaces.
Satoshi IMAMORI, Terukazu AKIYAMA
Filed: 24 Jan 22
Utility
Semiconductor Module Case and Method for Producing Semiconductor Module Case
15 Sep 22
A semiconductor module case formed by injection molding into a box shape using a mold open on a bottom thereof, includes an external terminal disposed on a top face or a side face of the case, the external terminal penetrating through the case from an inside to an outside thereof and being electrically connectable to a semiconductor element inside of the case, and a single first gate for a resin to enter the case.
Takanori SUGIYAMA
Filed: 1 Jun 22
Utility
Semiconductor Device and Manufacturing Method Thereof
15 Sep 22
There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.
Takahiro TAMURA, Michio NEMOTO
Filed: 31 May 22
Utility
Semiconductor Module and Manufacturing Method of Semiconductor Module
15 Sep 22
Provided is a semiconductor module, including: a semiconductor chip; a terminal, configured to extend in a extending direction, and be connected electrically with the semiconductor chip; a sealing resin, configured to seal the semiconductor chip, and cover at least a part of an upper surface of the terminal and at least a part of a lower surface of the terminal; and a lower side resin, configured to extend in the extending direction from the sealing resin, and cover at least a part of the lower surface of the terminal, wherein in the extending direction, a length at which the sealing resin and the lower side resin cover the lower surface of the terminal is greater than a length at which the sealing resin covers the upper surface of the terminal in the extending direction; and wherein the sealing resin and the lower side resin are formed of a same material.
Yoshinori OTOMO
Filed: 23 Jan 22
Utility
Cooling Apparatus, Semiconductor Module, and Vehicle
15 Sep 22
The flow speed distribution of a refrigerant in a cooling apparatus is made uniform.
Takahiro KOYAMA
Filed: 30 May 22
Utility
Automatic vending machine
13 Sep 22
An automatic vending machine includes: a product housing rack including product housing shelves each including a product housing path, and a product discharger; a first stopper configured to be movable between a protrusion position and a retract position, and to tilt such that a free end side of a holding portion is positioned at a product discharge port; a second stopper configured to be movable between a retract position and a protrusion position, and to press a vending product when protruding; a link configured to move each of the first and the second stopper to the protrusion and the retract position; and a driver configured to drive the link, wherein the second stopper includes ribs formed on a surface facing the product housing path, the ribs being configured to extend from a base end part toward a holding portion of the second stopper.
Katsuhiko Fukuda, Tsutomu Iwako, Yasuo Nakazato, Yasuhiro Yamazaki, Takashi Nishiyama
Filed: 1 Jun 20