2134 patents
Page 32 of 107
Utility
Electrophotographic Photoconductor, Method of Manufacturing the Same, and Electrophotographic Apparatus
18 Aug 22
Provided are an electrophotographic photoconductor that is less likely to cause transfer ghosting even when mounted in an electrophotographic apparatus with high transfer voltage set for high-speed or cleanerless processes, as well as a method of manufacturing the electrophotographic photoconductor, and an electrophotographic apparatus.
Fengqiang ZHU, Shinjiro SUZUKI, Masaru TAKEUCHI, Kazuki NEBASHI
Filed: 3 Jan 22
Utility
Pressure sensor having a failure detection unit
16 Aug 22
If the bridge circuit fails due to damage of the diaphragm, the damage is detected at an early stage.
Kazuhiro Matsunami
Filed: 27 Sep 20
Utility
Semiconductor module having an N terminal, A P terminal and an output terminal and method of fabricating the semiconductor module
16 Aug 22
A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode.
Motohito Hori, Yoshinari Ikeda
Filed: 25 Sep 20
Utility
Integrated circuit and power supply circuit
16 Aug 22
An integrated circuit for a power supply circuit that generates an output voltage from an input voltage and includes an inductor and a transistor, the integrated circuit configured to switch the transistor to control a current of the inductor.
YoshinorI Kobayashi, Takato Sugawara
Filed: 24 May 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
11 Aug 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first electrode, and a second electrode.
Shingo HAYASHI
Filed: 29 Dec 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing Silicon Carbide Semiconductor Device
11 Aug 22
A silicon carbide semiconductor device being capable of operating at least 100 degree C., includes a semiconductor substrate having an active region, the semiconductor substrate having first and second surfaces opposite to each other, a first semiconductor region of an n type, provided in the semiconductor substrate, a second semiconductor region of a p type, provided in the active region, between the first surface of the semiconductor substrate and the first semiconductor region, and a device element structure including a pn junction between the second and first semiconductor regions that forms a body diode through which a current flows when the semiconductor device is turned on.
Yohei KAGOYAMA, Masaki MIYAZATO
Filed: 4 Jan 22
Utility
Silicon Carbide Semiconductor Device
11 Aug 22
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, provided in the second semiconductor layer at positions facing the first semiconductor regions in a depth direction and having an impurity concentration higher than an impurity concentration of the second semiconductor layer, trenches, gate insulating films, gate electrodes, a first electrode, a second electrode, and third electrodes.
Shinichiro MATSUNAGA
Filed: 30 Dec 21
Utility
Silicon Carbide Semiconductor Device and Method of Manufacturing a Silicon Carbide Semiconductor Device
11 Aug 22
Back-surface roughness of a back surface of a silicon carbide semiconductor device having a MOS gate structure in a first region that is a region within 30 μm of a cross section (lateral surface) of the device is at most 4 μm while the back-surface roughness in a second region other than the first region is at most 2 μm, the back surface of the silicon carbide semiconductor device is the back surface of the second electrode.
Masaki MIYAZATO, Makoto UTSUMI
Filed: 30 Dec 21
Utility
Semiconductor Device
11 Aug 22
Provided is a semiconductor device, wherein a straight line extending from an end portion E1 in the extending direction of a contact hole for electrically connecting an emitter electrode and a front surface of a semiconductor substrate toward a back surface of the semiconductor substrate is defined as a first perpendicular line, a straight line forming a predetermined angle θ1 with respect to the first perpendicular line and passing through the end portion E1 in the extending direction of the contact hole is defined as a first straight line, a position where the first straight line intersects a back surface of the semiconductor substrate is defined as a position M1, and the position M1 is located on an outer side of a cathode region in the extending direction.
Soichi YOSHIDA
Filed: 25 Apr 22
Utility
Power Converter
11 Aug 22
An object of the present invention is to provide a power converter capable of preventing upsizing of a chip on which a switching element is formed and detecting the temperature in a switching operation of the switching element.
Takeshi KAMIMURA
Filed: 27 Dec 21
Utility
Semiconductor device and method of inspecting semiconductor device
9 Aug 22
A portion of a source electrode exposed by an opening in a passivation film is used as a portion of a source pad.
Keiji Okumura
Filed: 27 Jan 20
Utility
Semiconductor module
9 Aug 22
A semiconductor module includes a multilayer substrate having an insulating plate on which first to third conductive layers respectively connected to positive, negative and output electrode terminals are arranged in a first direction, a plurality of first semiconductor elements each having top and bottom electrodes on the first conductive layer and arranged in a second direction orthogonal to the first direction, a plurality of second semiconductor elements each having top and bottom electrodes on the second conductive layer and arranged in the second direction, first and second main wiring members each connecting the top electrode of each first and second semiconductor element to the second and third conductive layers.
Tadahiko Sato
Filed: 30 Mar 21
Utility
State output circuit and power supply apparatus
9 Aug 22
A state output circuit that outputs a state signal indicating a state of a power supply apparatus, including: a state output terminal that outputs the state signal; a reference potential line to which a reference potential is applied; a first pull-up terminal to which a first pull-up potential is applied, wherein the first pull-up potential is a potential higher than the reference potential; a connection switch unit that is provided between the state output terminal and the reference potential line, and switches whether to connect the state output terminal to the reference potential line or not, in accordance with the state of the power supply apparatus; a first protection resistor provided between the connection switch unit and the state output terminal; and a pull-up unit that pulls up a first connection line between the first protection resistor and the connection switch unit up to the first pull-up potential.
Sho Nakagawa
Filed: 25 Aug 20
Utility
Semiconductor element and method for identifying semiconductor element
9 Aug 22
A semiconductor element encompasses a first external electrode on an upper surface side of a semiconductor chip, a second external electrode, spaced apart from the first external electrode, provided in parallel with the first external electrode; and a protective film covering the first and second external electrodes, having first and second windows to expose portions of upper surfaces of the first and second external electrodes, respectively.
Taichi Karino
Filed: 22 Oct 19
Utility
Semiconductor device comprising a capacitor
9 Aug 22
A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case.
Ryoichi Kato, Yoshinari Ikeda, Yuma Murata
Filed: 30 Nov 20
Utility
Semiconductor module
9 Aug 22
A semiconductor module includes semiconductor elements, a case that houses the semiconductor elements, an external terminal electrically connecting the semiconductor elements and an external conductor, and a nut into which a bolt that secures the external conductor and the external terminal is threaded.
Satoshi Kaneko, Hisato Inokuchi
Filed: 30 Mar 21
Utility
Method of manufacturing silicon carbide semiconductor device
9 Aug 22
In a method of manufacturing a silicon carbide semiconductor device that is a silicon carbide diode having a JBS structure including a mixture of a Schottky junction and a pn junction and that maintains low forward voltage through a SBD structure and enhances surge current capability, nickel silicide films are formed in an oxide film by self-alignment by causing a semiconductor substrate and a metal material film to react with one another through two sessions of heat treatment including a low-temperature heat treatment and a high-temperature heat treatment, the metal material film including sequentially a first nickel film, an aluminum film, and a second nickel film, the first nickel film being in contact with an entire area of a connecting region of a FLR and p-type regions respectively exposed in openings of the oxide film.
Takahito Kojima, Naoyuki Ohse
Filed: 30 Nov 20
Utility
Chip component
9 Aug 22
Takuma Shimoichi
Filed: 11 Jun 20
Utility
Silicon carbide semiconductor device
9 Aug 22
A semiconductor device includes an active region through which a main current passes during an ON state.
Akimasa Kinoshita
Filed: 29 Jan 21
Utility
Controller of switching power supply apparatus
9 Aug 22
A controller of a current resonance switching power supply apparatus configured to supply a constant output voltage to a load.
Koji Sonobe
Filed: 27 Jul 20