1577 patents
Page 39 of 79
Utility
Semiconductor device, semiconductor systems and test-control methods for executing fault injection test on a plurality of failure detection mechanism
4 May 21
A semiconductor device capable of executing fault injection test on a plurality of failure detection mechanism in a short time is provided.
Kazuo Kato, Hiroshi Morita
Filed: 19 Sep 19
Utility
Method of manufacturing a semiconductor device
4 May 21
Reliability of a semiconductor device is improved.
Noriaki Mineta
Filed: 15 Apr 19
Utility
768egawh3iyfsmtdhmxsqapv9du1m4 be0abla
4 May 21
A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads.
Tadatoshi Danno, Hiroyoshi Taya, Yoshiharu Shimizu
Filed: 1 Mar 19
Utility
6apych wve0p9xeos0ncrbfqkbzr0qzlsp2jvfcyljx5k
4 May 21
A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film.
Tadashi Yamaguchi
Filed: 10 May 19
Utility
jf8tnglgwf7s4nz30iqrgunv38b yjurgp3sfv
4 May 21
A semiconductor device including an IE-type trench gate IGBT requires to be improved in IE effect to reduce on voltage.
Nao Nagata
Filed: 4 Nov 19
Utility
tei7bomshvil9c2oiomx5btkpamy90w1vkp1fc avf
4 May 21
In a semiconductor device including a lockstep function, conflicts of bus accesses by a plurality of processors are suppressed.
Yoshitaka Taki, Tadaaki Tanimoto
Filed: 20 Apr 20
Utility
gzci16pdfl3i498wve1xg0c3hg
29 Apr 21
A semiconductor device includes a temperature sensor, a scan control circuit which generates scan chain selection information in accordance with a measurement result of the temperature sensor, a clock control circuit which generates one or more scan chain clock signals based on an external clock signal and the scan chain selection information, a pattern generation circuit which generates a test pattern, and a logic circuit which includes a plurality of scan chains and which receives the scan chain clock signals and the test pattern.
Koji SUZUKI, Masaaki TANIMURA
Filed: 22 Sep 20
Utility
eiwwxl5 j1og5a3apay9j3o
29 Apr 21
To make an excessive power receiving request by a sink when a USB Type-C legacy cable is used.
Takayuki SUZUKI
Filed: 7 Oct 20
Utility
85jjc5tisblqc4bry64e0n4cy0c6wmzy8zx9axe4qgaec
29 Apr 21
An image processing device includes a three-dimensional graphics processor that generates three-dimensional drawing data based on a three-dimensional drawing command, a command converter that converts the three-dimensional drawing command into a two-dimensional drawing command, a two-dimensional graphics processor that generates two-dimensional drawing data based on the converted two-dimensional drawing command and a display controller that displays the two-dimensional drawing data in place of the three-dimensional drawing data when a load of the three-dimensional graphics processor is high.
Yoshiki AZUMA, Shinya TOMARI
Filed: 25 Sep 20
Utility
1iz3g0kholmyb76imohxad1okrhlfffnn29s0xe147rdgc hddehyw9zn
29 Apr 21
A semiconductor device for controlling a three-phase motor with double windings, includes a first inverter that drives a first winding of the three-phase motor, a second inverter that drives a second winding of the three-phase motor and a communication line between the first and second inverters.
Naohiko AOKI
Filed: 25 Sep 20
Utility
kts3roohzb96r 5anrqdr661w5epm3
27 Apr 21
In a semiconductor device, a semiconductor substrate includes a bulk layer, a buried oxide layer provided in at least a partial region on the bulk layer, and a surface single crystal layer on the buried oxide layer.
Shinichi Uchida, Yasutaka Nakashiba
Filed: 11 Jun 19
Utility
83kp9o3efkjgwk74e34d1lnlpdex9q01 2zxm3pqn83
27 Apr 21
A semiconductor device whose performance is improved is disclosed.
Tamotsu Ogata
Filed: 9 Mar 20
Utility
82khw1vfka90n7zmkl9yb8jcmmt2k91hkml8a9bmy8y0vbdryy
27 Apr 21
To extend the transmission distance with the voltage supply source and improve the communication performance of PLCs Solution.
Noriyuki Shinohara, Akira Kuwano
Filed: 9 Oct 19
Utility
f6iudizfoxud8foev7k 9k7vyn45z8pa4yhnj9
27 Apr 21
A semiconductor device capable of stabilizing an internal voltage is provided.
Hidetoshi Ozoe
Filed: 28 Jun 19
Utility
8tirtqxtcwc27f29a9vu7gjb5 fnyplb2fd
27 Apr 21
A monolithic integrated circuit for controlling a high-side switching element for a load using a bootstrap capacitor is disclosed.
Hans-Juergen Braun
Filed: 25 Jan 18
Utility
5butdtp95 vpy2b8esnku01057rqrk
22 Apr 21
An electronic system device comprises a power generation device generating a power supply voltage, a substrate bias generation circuit connected to the power generation device, a memory circuit, a monitor circuit, and a capacitor connected to the substrate bias generation circuit via a switch.
Akira TANABE, Kazuya UEJIMA
Filed: 12 Oct 20
Utility
rrp6zxq1cn50awcrokozsla9pe79xftrrir3wacp
22 Apr 21
A semiconductor device includes a data path having a plurality of processor elements, a state transition management unit managing a state of the data path, and a parallel computing unit in which an input and an output of data is sequentially carried out, and an output of the parallel computing unit is capable of being handled by the plurality of processor elements.
Taro FUJII, Teruhito TANAKA, Katsumi TOGAWA, Takao TOI
Filed: 7 Oct 20
Utility
smzjuxhvxn1n jmw8elq2rbwp3by6zhhkwloc7njwh23kqlgt2jdvuwb1b7
22 Apr 21
A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them.
Kazunori HASEGAWA, Yuichi YATO, Hiroyuki NAKAMURA, Yukihiro SATO, Hiroya SHIMOYAMA
Filed: 1 Oct 20
Utility
8s25oxup5ipgnn9y12dukklh lzez474cq3xio3r0
22 Apr 21
A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.
Takuya MARUYAMA, Takahiro MARUYAMA
Filed: 25 Sep 20
Utility
1epqjlx5tb6btr0ruwkmpsmk2vby30jt0sxxa7ukzegyerb4nv8p8
13 Apr 21
A mobile object control system has an SfM unit detecting distance to an object imaged by a monocular camera by using the SfM algorithm, a first-stop-position output unit outputting a first stop position, a second-stop-position calculating unit calculating a second stop position closer than the first stop position, and a control unit controlling travel of a mobile object.
Kazuaki Terashima, Yuki Kajiwara
Filed: 10 Jul 18