1577 patents
Page 36 of 79
Utility
Semiconductor device, semiconductor system, and control method of the same
22 Jun 21
A semiconductor device is provided which can suppress heating while assigning performances to a plurality of modules whose heat generations are controlled while considering usage conditions of the plurality of modules.
Takahiko Gomi, Ryu Nagasawa
Filed: 6 Nov 18
Utility
Semiconductor device and method of manufacturing the same
22 Jun 21
Reliability of a semiconductor device is improved.
Wataru Sumida
Filed: 3 Apr 19
Utility
3u6limdqz2g1qm165jqgen03l9l j2z5vlcln4
17 Jun 21
A system for and a method of generating an ordered list of instructions comprising a list of pixel coordinates which are vertices of triangles in a strip of a reference input image in a source coordinate system such that transformation of the vertices to a corresponding output image in a destination coordinate system causes the triangles to be mapped to a block of image data which maps to a block of line memory (or “texture cache”).
Bjoern TOSCHI
Filed: 27 Nov 18
Utility
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17 Jun 21
A gallium oxide diode includes: a gallium oxide substrate having an n-type gallium oxide drift layer; an anode electrode of a metal film formed over a front surface of the n-type gallium oxide drift layer; a cathode electrode formed over a rear surface of the gallium oxide substrate; and a reaction layer of a metal oxide film of p-type conductivity formed between the anode electrode and the n-type gallium oxide drift layer.
Hironobu MIYAMOTO, Masami SAWADA, Tatsuya USAMI, Tomoo NAKAYAMA
Filed: 18 Nov 20
Utility
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15 Jun 21
A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods.
Kyohei Yamaguchi, Daisuke Kawakami, Hiroyuki Hamasaki
Filed: 2 Mar 20
Utility
qfp2y6bgyoa335ixoiyz7h82aoacu
15 Jun 21
After the step of polishing, a part of each of each gate electrode is removed such that the upper surface of each gate electrode is located closer than the damaged region formed in the gate insulating film located between the gate electrodes to the main surface of the semiconductor substrate in cross-section view.
Naoki Takizawa, Tatsuyoshi Mihara
Filed: 14 Oct 19
Utility
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15 Jun 21
Reliability of a semiconductor module is improved.
Kuniharu Muto, Koji Bando
Filed: 7 Jan 20
Utility
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15 Jun 21
A semiconductor device includes a semiconductor substrate including a first epitaxial layer having a first surface and a second surface, a second epitaxial layer, a buried region formed across the first epitaxial layer and the second epitaxial layer, and a gate electrode.
Takahiro Mori
Filed: 5 Feb 20
Utility
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8 Jun 21
After a die bonding step, a wire bonding step is performed to electrically connect the plurality of pad electrodes and the plurality of leads of the semiconductor chip via a plurality of copper wires.
Yasuhiko Akaike
Filed: 27 Sep 19
Utility
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8 Jun 21
To improve a reliability of a semiconductor device, a memory cell array is formed in a product region of an SOI substrate, and a test cell array is formed in a scribe region of the SOI substrate.
Nobuo Tsuboi
Filed: 20 Apr 20
Utility
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8 Jun 21
The invention aims at downsizing a sensor node incorporating a biosensor to detect biological information and at improving the accuracy of detection made by the biosensor and ensures a quality of communication performed by the sensor node.
Hiroki Shibuya
Filed: 18 Oct 16
Utility
72es502r1kv4j4rg9t2yhs67t05mbz5hvypp
8 Jun 21
There is to provide a power conversion device capable of estimating a junction temperature of a power transistor at a high accuracy.
Shunichi Kaeriyama, Norio Kido
Filed: 13 Nov 18
Utility
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3 Jun 21
A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer.
Tetsuya IIDA, Yasutaka NAKASHIBA, Seigo NAMIOKA, Tomoo NAKAYAMA
Filed: 2 Dec 19
Utility
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3 Jun 21
A data processor capable of suppressing variation in latency during a bus access is provided.
Manabu KOIKE
Filed: 8 Feb 21
Utility
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3 Jun 21
An object of the present invention is to provide an information input device capable of realizing high-precision touch operations.
Kentarou NIIKURA
Filed: 17 Feb 21
Utility
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3 Jun 21
A semiconductor device includes a base member, a multilayer wiring layer, and a first resistive element.
Shunji KUBO, Koichi ANDO, Eiji IO, Hideyuki TAJIMA, Tetsuya IIDA
Filed: 2 Dec 19
Utility
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1 Jun 21
A signal processing device includes an oscillation circuit, a protection target circuit, a delay time detection circuit, and a clock control circuit.
Narihira Takemura, Terunori Kubo, Tetsuo Takahashi
Filed: 6 Feb 20
Utility
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1 Jun 21
Disclosed herein is a method of generating an RTL description that implements any functional safety system.
Shintaro Imamura
Filed: 16 Mar 20
Utility
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1 Jun 21
A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other.
Shinichi Uchida, Akio Ono, Shinichi Kuwabara, Yasutaka Nakashiba
Filed: 15 Oct 19
Utility
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1 Jun 21
The reliability of semiconductor device is improved.
Ryo Hayashi, Yasuhiko Akaike
Filed: 16 Oct 19