1577 patents
Page 34 of 79
Utility
Semiconductor Device
12 Aug 21
A semiconductor device includes first and second semiconductor layers, first and second basic logic cells, and a tap cell.
Yasuhiro YADOGUCHI
Filed: 7 Feb 20
Utility
Semiconductor Device and Method of Manufacturing the Same
12 Aug 21
A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film.
Tadashi YAMAGUCHI
Filed: 5 Apr 21
Utility
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10 Aug 21
A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via.
Koji Takayanagi
Filed: 24 Jul 18
Utility
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10 Aug 21
A drive apparatus for a motor having a stator and a rotor, the drive apparatus including a current detection unit configured to detect, when the motor is rotating, each of multi-phase currents flowing through coils of the stator, and a control unit for controlling the motor by sensor-less control configured to convert the detected multi-phase currents into a d-axis current Id and a q-axis current Iq in a d-q coordinate system, calculate a phase error between an actual rotational position of the rotor and an imaginary rotational position thereof by comparing the d-axis current Id with a d-axis current command value Idref and comparing the q-axis current Iq with the d-axis current command value Idref, perform control so that the phase error gets closer to zero, and output voltage command values to a motor drive circuit.
Naohiko Aoki, Kiyoshi Ishikawa
Filed: 16 Dec 19
Utility
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10 Aug 21
The power consumption of a circuit block outside a microcomputer and inside the same system is reduced.
Shunsuke Kogure, Takehiro Shimizu, Tatsuwo Nishino
Filed: 9 Aug 18
Utility
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10 Aug 21
A semiconductor device capable of reducing power consumption is provided.
Masayuki Shimizu
Filed: 8 Apr 19
Utility
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5 Aug 21
A semiconductor device includes a memory array arranged in a matrix, a plurality of word lines provided corresponding to memory cell rows, a word driver for driving one of the plurality of word lines, a plurality of row select lines connected to the word driver, and a row decoder for outputting a row select signal to the plurality of row select lines based on input row address information.
Shunya NAGATA, Yoshikazu SAITO, Takeshi HASHIZUME
Filed: 26 Jan 21
Utility
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5 Aug 21
A semiconductor device includes a distortion correction unit that performs correct distortion processing on a captured image, a SRAM that stores image data after the distortion correction processing, a filter processing unit that receives the image data after the distortion correction processing from the SRAM and that performs smoothing filter processing on the image data after the distortion correction processing, after the image data after the distortion correction processing having a size required for the smoothing filter processing is stored in the SRAM, and an image reduction unit that performs reduction processing on image data after the smoothing filter processing.
Akihiro YAMAMOTO
Filed: 19 Apr 21
Utility
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3 Aug 21
According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed.
Tetsuya Iida, Yasutaka Nakashiba
Filed: 29 Mar 19
Utility
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3 Aug 21
Two optical waveguides and an insulating film provided to cover the optical waveguides are formed over an insulating layer.
Shinichi Watanuki, Yasutaka Nakashiba
Filed: 7 Nov 18
Utility
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3 Aug 21
The memory includes a first descriptor area and a first data area corresponding to the first OS, and a second descriptor area and a second data area corresponding to the second OS.
Masaru Nagai
Filed: 28 Jun 19
Utility
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3 Aug 21
A semiconductor device has a first memory circuit comprising a first memory cell comprising a first field effect transistor, a second memory circuit comprising a second memory cell comprising a second field effect transistor, and a regulator for converting the first power supply potential to a second voltage value lower than the voltage value of the first power supply potential.
Daisuke Nakamura, Yoshisato Yokoyama
Filed: 20 Sep 19
Utility
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3 Aug 21
An object of the present invention is to improve manufacturing efficiency of a semiconductor device.
Yoshiaki Sato, Yoshinori Miyaki, Junichi Arita
Filed: 21 Aug 19
Utility
5s8dabd112soije9jzme30a8clxr48vrm52s8lw2qx5gh
3 Aug 21
Reliability of a semiconductor device having a plated layer formed on an electrode pad is improved.
Takashi Tonegawa
Filed: 18 Nov 19
Utility
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3 Aug 21
There is provided a semiconductor device including a first gate pattern on a semiconductor substrate, a second gate pattern adjacent to a side surface of the first gate pattern via an ONO film, and an active region located just below the second gate pattern via the ONO film.
Hiraku Chakihara
Filed: 3 Apr 19
Utility
bylc6c0w0g7fmf4pjk5jn5yu2oc9803aljymmxg5uc5pnvxccdixpfcje42
3 Aug 21
The n-type body extension region BER is separated from the n+ buried region BL by the p-type impurity region PIR and is in contact with the p-type drift region DFT1.
Yuji Ishii
Filed: 6 Feb 20
Utility
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3 Aug 21
To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate.
Masaru Kadoshima, Masao Inoue
Filed: 26 Feb 18
Utility
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3 Aug 21
A semiconductor device for vector control of an AC motor via an inverter, includes a dq-axis reference current value generator which generates dq-axis reference current values, a three-phase/two-phase converter which generates dq-axis detected current values from three-phase current values of the inverter and a rotor position of the AC motor, a current controller generates dq-axis reference voltage values by proportional control and proportional integral control based on the dq-axis reference current values, the dq-axis detected current values, a rotation angular speed of the AC motor, and a motor parameter setting value, wherein the integration controller provides an initial voltage value to an integrator before switching to the proportional integral control, and wherein the initial voltage value is based on the dq-axis reference current values, the dq-axis detected current values, the rotation angular speed, the motor parameter setting value, and one of a proportional gain and the dq-axis reference voltage values.
Hengquan Jin, Guanyuan Chen, Chengzhe Li
Filed: 20 Feb 20
Utility
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29 Jul 21
According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
Masanori IKEDA, Tadashi KAMEYAMA
Filed: 16 Apr 21
Utility
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29 Jul 21
A semiconductor device includes a semiconductor substrate, a semiconductor layer, an insulating film, a conductive film, a first electrode pad, a second electrode pad, and a third electrode pad.
Shunji KUBO, Kazuki NIINO, Hajime HAYASHIMOTO
Filed: 27 Jan 20