1577 patents
Page 37 of 79
Utility
Method of manufacturing semiconductor device
1 Jun 21
Reliability of a semiconductor device is improved.
Shinichiro Abe
Filed: 9 Jan 19
Utility
Control circuit, electric driving system, inverter system and method for controlling thereof
1 Jun 21
The temperature of inverters and power semiconductor devices is detected at high speed and with high accuracy.
Ryutaro Minesawa, Chengzhe Li
Filed: 13 Nov 19
Utility
ljeq26035ogt9z16 7nuzd
27 May 21
A semiconductor device comprises a wiring substrate and a semiconductor chip.
Ryuichi OIKAWA
Filed: 12 Oct 20
Utility
inyfobu3975y7uz8 zfjqlnin
27 May 21
To improve an on-resistance of a semiconductor device.
Yasuhiro OKAMOTO, Nobuo MACHIDA
Filed: 12 Oct 20
Utility
7rn3b3on w9kfl7lv2hmfsxg3q6m
27 May 21
A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion.
Atsushi SAKAI, Satoru TOKUDA, Ryuuji UMEMOTO, Katsumi EIKYU, Hiroshi YANAGIGAWA
Filed: 11 Nov 20
Utility
iveqmbcbgs2fosy14zjd9rkbj8f7tlxzw9 ohq4y
25 May 21
An interference of control signals is caused by a deviation in the start timings of counting between counters of timer counter units of a first MCU and a second MCU.
Tetsuji Tsuda, Yutaka Funabashi, Teruki Fukuyama
Filed: 27 Sep 19
Utility
rcz50ay4frrj2eytxvb9h0c7vamlm uol5fnav
25 May 21
A message handler is described.
Christian Mardmoeller, Dnyaneshwar Kulkarni, Thorsten Hoffleit
Filed: 18 Feb 16
Utility
88ac10ks71k53seddr32d4cq67wzchq9qhsk46tmpqjfqa
20 May 21
A functional safety system with high reliability is provided.
Toshiki YAMAHIRA, Toshihiro KAWANO
Filed: 18 Nov 20
Utility
ddijegcqzd1a5rvb07ye3wufvrt4k2ztrb62yc
20 May 21
The image processing device acquires feature quantities (maximum value, minimum value, average value, histogram, etc.) of the entire area (GA) of the image and feature quantities of each. local area (LA) of the image from the input image, and calculates a plurality of modulation gain values (gamma correction curves) for GA and each LA.
Mitsuhiro KIMURA, Akihide TAKAHASHI
Filed: 21 Oct 20
Utility
tt3ps5mnto1f7bv5c176rwonn6wlenjddfw 8duv6
20 May 21
The semiconductor device includes a first semiconductor substrate having a first surface and a second surface having a relationship with each other, a first circuit and electrically connected to the first circuit, and a first inductor formed at a position overlapping with the first semiconductor substrate, between the first surface and the first circuit, a first chip formed so as to cover the first surface, a second semiconductor substrate having a third surface and a fourth surface having a relationship with each other, a second circuit and electrically connected, and a second inductor formed so as to be electromagnetically coupled with the first inductor, the second surface, grooves are formed to reach the first insulating film, in a plan view, It is formed so as to surround the first circuit.
Shinichi UCHIDA, Yasutaka NAKASHIBA
Filed: 11 Nov 20
Utility
0vyj3wx3xygw0and2sc lh1yemqy2p2kwq6f
20 May 21
A semiconductor device includes a semiconductor substrate, first and second trench electrodes formed on the semiconductor substrate, a floating layer of a first conductivity type formed around the first and second trench electrodes, a floating separation layer of a second conductivity type formed between the first and second trench. electrodes and contacted with. the floating layer of the first conductivity type and a floating layer control gate disposed on the floating separation layer of the second conductivity type.
Nao NAGATA
Filed: 28 Oct 20
Utility
57ote653ld3n87 1kapfouo7ybzdr4x2rdnh8g
20 May 21
A semiconductor device includes a memory cell which is configured of a FinFET having a split-gate type MONOS structure, the FinFET has a plurality of source regions formed in a plurality of fins, and the plurality of source regions are commonly connected by a source line contact.
Digh HISAMOTO, Yoshiyuki KAWASHIMA, Takashi HASHIMOTO
Filed: 29 Oct 20
Utility
dgo73k6r75p9rqgnbpszogo6qmc
18 May 21
An ultrasonic receiver receives ultrasonic waves reflected at a plurality of portions of the body of a person to be measured, and thus the person to be measured needs to input the approximate height of himself/herself.
Kakeru Kimura, Masahito Kajiwara, Shinji Takeda, Takuro Ichikawa, Shoichi Hamada, Koji Hirano
Filed: 3 May 18
Utility
8uc7jyjg9w7htji1pex15tn76nunh 8usc
18 May 21
According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.
Masanori Ikeda, Tadashi Kameyama
Filed: 23 Jul 19
Utility
gl8 80sd3j6hnpzm9ba2i57ddwqn5ik7d
18 May 21
To improve the efficiency of pressure detection, a driver applies a positive-phase signal to a capacitance element from an opposite side to a coupling point in a control device.
Masato Hirai, Takeshi Yoshizawa, Takeshi Kuwano
Filed: 6 Nov 18
Utility
jy8qbbn3gshd1b75pdhh62sw6mwia5umc94cxkcrnyyb4g
18 May 21
It is to provide a semiconductor device, a semiconductor system, and a method of controlling the semiconductor device capable of reducing the power consumption.
Tsuyoshi Waki
Filed: 29 Aug 18
Utility
90b38ejr vqiy92c0o0t9iiyck7b8zae4fkjn
18 May 21
A cryptographic communication method using a dynamically-generated private key is provided.
Daisuke Moriyama
Filed: 16 Nov 17
Utility
x8idecniyuo6z5e9a8t m3qje
18 May 21
A semiconductor device includes a distortion correction unit that performs correct distortion processing on a captured image, a SRAM that stores image data after the distortion correction processing, a filter processing unit that receives the image data after the distortion correction processing from the SRAM and that performs smoothing filter processing on the image data after the distortion correction processing, after the image data after the distortion correction processing having a size required for the smoothing filter processing is stored in the SRAM, and an image reduction unit that performs reduction processing on image data after the smoothing filter processing.
Akihiro Yamamoto
Filed: 19 Jun 19
Utility
po6xo7l6kvl4kytvurcf26d09es
13 May 21
A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.
Yoshihiko YOKOI, Yusuke OJIMA
Filed: 29 Sep 20
Utility
nh702r7ymmx8usn7woykk9tt8xp3xu71qyc88bcd2kklha5uv4y120i
13 May 21
Access control is achieved in consideration of write training.
Katsuya MIZUMOTO, Toshiyuki HIRAKI, Nobuhiko HONDA, Sho YAMANAKA, Takahiro IRITA, Yoshihiko HOTTA
Filed: 15 Jan 21