1577 patents
Page 33 of 79
Utility
Semiconductor Device and Motor Driving System Using the Same
2 Sep 21
A gate drive semiconductor device includes: external terminals to which PWM control signals are supplied; external terminals outputting a drive signal for driving a three-phase BLDC motor; external terminals to which the counter electromotive voltage generated by driving the three-phase BLDC motor is supplied; a zero-cross determination unit generating an interrupt signal indicating timing at which the counter electromotive voltage intersects with a midpoint potential of the three-phase BLDC motor based on the PWM control signal and the counter electromotive voltage; and an external terminal outputting the interrupt signal.
Seigi ISHIJI, Minoru KUROSAWA
Filed: 13 Jan 21
Utility
Semiconductor device and its power supply control method
31 Aug 21
The semiconductor device includes a semiconductor chip including a first nonvolatile memory including a first memory block and a second memory block, CPU controlling the first nonvolatile memory, a first switch electrically connected to the first memory block and controlling the supply of the first power supply voltage to the first memory block, a second switch electrically connected to the second memory block and controlling the supply of the first power supply voltage to the second memory block, and a second nonvolatile memory electrically connected to each of the first switch and the second switch and storing flag information for controlling the first switch and the second switch, wherein the control of each of the first switch and the second switch is performed based on flag information indicating whether program data executed by CPU is written in the first memory block and the second memory block.
Kotaro Sakumura, Hiroshi Tachibana, Hideki Otsu
Filed: 3 Dec 19
Utility
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31 Aug 21
A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor.
Yoshito Nakazawa, Yuji Yatsuda
Filed: 11 Feb 19
Utility
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26 Aug 21
A semiconductor device for vector control of an AC motor via an inverter, includes a dq-axis reference current value generator which generates dq-axis reference current values, a three-phase/two-phase converter which generates dq-axis detected current values from three-phase current values of the inverter and a rotor position of the AC motor, a current controller generates dq-axis reference voltage values by proportional control and proportional integral control based on the dq-axis reference current values, the dq-axis detected current values, a rotation angular speed of the AC motor, and a motor parameter setting value, wherein the integration controller provides an initial voltage value to an integrator before switching to the proportional integral control, and wherein the initial voltage value is based on the dq-axis reference current values, the dq-axis detected current values, the rotation angular speed, the motor parameter setting value, and one of a proportional gain and the dq-axis reference voltage values.
Hengquan JIN, Guanyuan CHEN, Chengzhe LI
Filed: 20 Feb 20
Utility
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26 Aug 21
A semiconductor device includes an interrupt control circuit that receives a plurality of interrupt signals from the circuit blocks and outputs an interrupt request to the processor, and an interrupt monitoring circuit that corresponds to one of the interrupt signals and includes a setting circuit for setting a monitoring type and first and second monitoring periods.
Kyohei YAMAGUCHI, Daisuke KAWAKAMI, Hiroyuki HAMASAKI
Filed: 13 May 21
Utility
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24 Aug 21
Even under various conditions, stay of request on a bus is eliminated, and memory efficiency can be improved.
Yuki Hayakawa, Toshiyuki Hiraki, Sho Yamanaka
Filed: 11 Jun 19
Utility
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24 Aug 21
A video encoding device includes a local decode generation unit for generating a reference image based on a result of encoding of a divided image, a compression unit for compressing the reference image to generate a compressed data, a reference image storage determination unit for determining whether to store the compressed data in a memory, and an inter-prediction unit for performing motion vector search for inter-coding based on a reference image stored in the memory.
Maiki Hosokawa, Toshiyuki Kaya, Tetsuya Shibayama, Seiji Mochizuki, Tomohiro Une, Kazushi Akie
Filed: 24 Oct 19
Utility
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24 Aug 21
The lower surface of the wiring substrate includes a first region overlapping with the semiconductor chip mounted on the upper surface, and a second region surrounding the first region and not overlapping with the semiconductor chip.
Yoshitaka Okayasu, Shuuichi Kariyazaki
Filed: 15 Oct 19
Utility
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24 Aug 21
The semiconductor device includes a fin FA selectively protruded from an upper surface of a semiconductor substrate SB, a gate insulating film GF1 formed on an upper surface and a side surface of the fin FA and having an insulating film X1 and a charge storage layer CSL, and a memory gate electrode MG formed on the gate insulating film GF1.
Shibun Tsuda
Filed: 15 Apr 19
Utility
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19 Aug 21
An integrated circuit, for example, a system-on-a-chip is disclosed.
Thorsten HOFFLEIT, Christian MARDMOELLER, Hansjoerg BERBERICH
Filed: 3 Feb 21
Utility
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19 Aug 21
A failure diagnostic apparatus includes a path calculation unit which calculates, for each input pattern to a diagnosis target cell, a path affecting an output value of the diagnosis target cell when a failure is assumed as an activation path, a path classification unit which classifies the activation path associated with the input pattern for which the diagnosis target cell has passed a test and the activation path associated with the input pattern for which the diagnosis target cell has failed the test, a path narrowing unit which calculates a first failure candidate path, a second failure candidate path and a normal path of the diagnosis target cell based on classified activation paths, and a result output unit which outputs information on the first failure candidate path, the second failure candidate path and the normal path.
Yukihisa FUNATSU, Kazuki SHIGETA
Filed: 14 Dec 20
Utility
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19 Aug 21
After a MISFET is formed on a substrate including a semiconductor substrate, an insulating layer and a semiconductor layer, an interlayer insulating film and a first insulating film are formed on the substrate.
Tatsuyoshi MIHARA
Filed: 18 Feb 20
Utility
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19 Aug 21
A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.
Chiemi HASHIMOTO, Kosuke YAYAMA, Hidekazu TAWARA
Filed: 21 Jan 21
Utility
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19 Aug 21
Yoshiki YAMAMOTO, Hideki MAKIYAMA, Toshiaki IWAMATSU, Takaaki TSUNOMURA
Filed: 7 Apr 21
Utility
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17 Aug 21
A semiconductor device includes an image data acquisition circuit which acquires a plurality of first captured image data and a plurality of second captured image data at a first time and a second time, an adjustment region determination circuit which detects a target object from the plurality of first captured image data, and determines an adjustment region by estimating a position of the target object at the second time, a color adjustment circuit configured to determine a color adjustment gain based on the adjustment region, and perform color balance adjustment processing on the plurality of second captured image data based on the color adjustment gain, and an image synthesis circuit configured to synthesize the plurality of second captured image data so that overlapping regions included in a plurality of images of the plurality of second captured image data overlap each other.
Hirofumi Kawaguchi, Akihide Takahashi
Filed: 4 Nov 19
Utility
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17 Aug 21
A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film.
Masao Inoue, Masaru Kadoshima, Yoshiyuki Kawashima, Ichiro Yamakawa
Filed: 25 Jun 19
Utility
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12 Aug 21
A DC-DC converter includes a high-side switch coupled between a first power supply and an output terminal, a low-side switch coupled between a second power supply and the output terminal, an inductor coupled to the output terminal, and a reverse current monitoring circuit that determines that a reverse current from the inductor to the output terminal occurs when the output terminal becomes a high voltage during a state in which the high-side switch and the low-side switch are in a dead time.
Masayuki IDA, Yasuhiko KOKAMI, Hideyuki TAJIMA, Hiroyuki INOUE, Noboru INOMATA
Filed: 30 Dec 20
Utility
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12 Aug 21
A message handler (61, 62) is described.
Christian Mardmoeller, Dnyaneshwar Kulkarni, Thorsten Hoffleit
Filed: 28 Apr 21
Utility
hjm0qvz3q8odn4usfagen5x9qyy7cuu6tpb73hnulmw80t797nelsbo0p
12 Aug 21
A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer.
Yuta MIZUKAMI, Tohru KAWAI
Filed: 14 Dec 20
Utility
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12 Aug 21
A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film.
Hirokazu SAYAMA, Fumihiko HAYASHI, Junjiro SAKAI
Filed: 7 Feb 20